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WO2013015573A3 - Transistor à effet de champ utilisant de l'oxyde de graphène et son procédé de fabrication - Google Patents

Transistor à effet de champ utilisant de l'oxyde de graphène et son procédé de fabrication Download PDF

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Publication number
WO2013015573A3
WO2013015573A3 PCT/KR2012/005809 KR2012005809W WO2013015573A3 WO 2013015573 A3 WO2013015573 A3 WO 2013015573A3 KR 2012005809 W KR2012005809 W KR 2012005809W WO 2013015573 A3 WO2013015573 A3 WO 2013015573A3
Authority
WO
WIPO (PCT)
Prior art keywords
effect transistor
graphene oxide
field
substrate
manufactured
Prior art date
Application number
PCT/KR2012/005809
Other languages
English (en)
Korean (ko)
Other versions
WO2013015573A2 (fr
Inventor
이상욱
강태원
파닌겐나디
Original Assignee
동국대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동국대학교 산학협력단 filed Critical 동국대학교 산학협력단
Publication of WO2013015573A2 publication Critical patent/WO2013015573A2/fr
Publication of WO2013015573A3 publication Critical patent/WO2013015573A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Cette invention concerne un transistor à effet de champ (FET) comprenant un oxyde de graphène ayant été soumis à un procédé de réduction, ledit transistor à effet de champ comprenant : un substrat ; une électrode de grille formée sur le substrat ; une couche diélectrique formée sur l'électrode de grille ; une électrode source et une électrode de drain formées sur la couche diélectrique ; et l'oxyde de graphène réduit sous forme de couche de canal reliant l'électrode source à l'électrode de drain. Le transistor à effet de champ selon cette invention peut être fabriqué sur un substrat flexible, contrairement à un FET classique utilisant un matériau silicié qui ne peut être fabriqué que sur un substrat dur. En particulier, l'oxyde de graphène réduit utilisé à titre de couche de canal se disperse bien dans l'eau et peut par conséquent être fabriqué sous la forme d'une suspension, permettant ainsi la formation d'un film mince à l'aide d'un procédé d'impression.
PCT/KR2012/005809 2011-07-22 2012-07-20 Transistor à effet de champ utilisant de l'oxyde de graphène et son procédé de fabrication WO2013015573A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0073292 2011-07-22
KR20110073292 2011-07-22

Publications (2)

Publication Number Publication Date
WO2013015573A2 WO2013015573A2 (fr) 2013-01-31
WO2013015573A3 true WO2013015573A3 (fr) 2013-03-21

Family

ID=47601628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005809 WO2013015573A2 (fr) 2011-07-22 2012-07-20 Transistor à effet de champ utilisant de l'oxyde de graphène et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR101428015B1 (fr)
WO (1) WO2013015573A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140118285A (ko) * 2013-03-28 2014-10-08 인텔렉추얼디스커버리 주식회사 환원된 그래핀 산화물을 이용한 변형 감지 소자 및 그 제조 방법
CN103295912B (zh) 2013-05-21 2015-12-02 中国电子科技集团公司第十三研究所 一种基于自对准技术的石墨烯晶体管制造方法
KR101424603B1 (ko) 2013-09-10 2014-08-04 한국과학기술연구원 박막 트랜지스터의 제조 방법
CN103531664B (zh) * 2013-10-28 2016-08-17 苏州大学 柔性衬底上制备石墨烯基光电晶体管的方法
WO2018072103A1 (fr) 2016-10-18 2018-04-26 广东东邦科技有限公司 Structure de tft basée sur un matériau de substrat de carbone quantique de graphène multicouche flexible et procédé de fabrication
KR101906005B1 (ko) * 2016-11-29 2018-10-10 국민대학교산학협력단 종이기판 상에 제작된 소멸가능 트랜지스터 전자장치 및 그 제조방법
KR102639314B1 (ko) * 2020-04-13 2024-02-21 고려대학교 세종산학협력단 수직 구조 전계효과 트랜지스터 및 그 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090059871A (ko) * 2007-12-07 2009-06-11 삼성전자주식회사 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극
KR20100136576A (ko) * 2009-06-19 2010-12-29 한국과학기술원 그래핀 필름 제조방법, 이에 의하여 제조된 그래핀 필름, 이를 포함하는 전극재료
US20110169013A1 (en) * 2010-01-12 2011-07-14 Cree, Inc. Growing polygonal carbon from photoresist
KR20110081683A (ko) * 2010-01-08 2011-07-14 서울대학교산학협력단 금속 나노입자를 이용하고 환원된 그래핀 산화물에 기반한 양쪽극 기억소자 및 이의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5544796B2 (ja) 2009-09-10 2014-07-09 ソニー株式会社 ３端子型電子デバイス及び２端子型電子デバイス
KR20120033722A (ko) * 2010-09-30 2012-04-09 한국전자통신연구원 그래핀 산화물 메모리 소자 및 그 제조 방법
KR101157105B1 (ko) 2011-02-14 2012-06-22 동국대학교 산학협력단 그라핀 옥사이드의 저항 스위칭 특성을 이용한 비휘발성 메모리 소자 및 이의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090059871A (ko) * 2007-12-07 2009-06-11 삼성전자주식회사 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극
KR20100136576A (ko) * 2009-06-19 2010-12-29 한국과학기술원 그래핀 필름 제조방법, 이에 의하여 제조된 그래핀 필름, 이를 포함하는 전극재료
KR20110081683A (ko) * 2010-01-08 2011-07-14 서울대학교산학협력단 금속 나노입자를 이용하고 환원된 그래핀 산화물에 기반한 양쪽극 기억소자 및 이의 제조방법
US20110169013A1 (en) * 2010-01-12 2011-07-14 Cree, Inc. Growing polygonal carbon from photoresist

Also Published As

Publication number Publication date
KR101428015B1 (ko) 2014-08-11
KR20130011966A (ko) 2013-01-30
WO2013015573A2 (fr) 2013-01-31

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