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WO2018179157A1 - Dispositif de traitement de substrat, unité de chauffage et procédé de fabrication de dispositif à semiconducteur - Google Patents

Dispositif de traitement de substrat, unité de chauffage et procédé de fabrication de dispositif à semiconducteur Download PDF

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Publication number
WO2018179157A1
WO2018179157A1 PCT/JP2017/012974 JP2017012974W WO2018179157A1 WO 2018179157 A1 WO2018179157 A1 WO 2018179157A1 JP 2017012974 W JP2017012974 W JP 2017012974W WO 2018179157 A1 WO2018179157 A1 WO 2018179157A1
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WO
WIPO (PCT)
Prior art keywords
side wall
reaction tube
heater
temperature
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/012974
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English (en)
Japanese (ja)
Inventor
野内　英博
稲田　哲明
立野　秀人
裕也 宮西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to PCT/JP2017/012974 priority Critical patent/WO2018179157A1/fr
Priority to JP2019508441A priority patent/JP6730513B2/ja
Priority to SG11201907981YA priority patent/SG11201907981YA/en
Priority to CN201780088409.5A priority patent/CN110419095A/zh
Publication of WO2018179157A1 publication Critical patent/WO2018179157A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present invention relates to a substrate processing apparatus, a heater unit, and a method for manufacturing a semiconductor device.
  • a liquid source containing hydrogen peroxide (H 2 O 2 ) is vaporized to generate a vaporized gas as a process gas, and this vaporized gas is applied to the substrate in the process chamber.
  • substrate processing including a supplying step is performed (see, for example, Patent Documents 1 and 2).
  • One of the objects of the present invention is to provide a technique capable of performing heating so as to prevent local deviation in the temperature of members forming the processing chamber.
  • a reaction tube that accommodates a substrate, a lid that closes a furnace port formed in the reaction tube, a heater provided on an outer periphery of a side wall near the furnace port of the reaction tube, A plurality of temperature sensors configured to measure temperatures at a plurality of positions different from each other in the circumferential direction of the side wall on the side wall near the furnace port of the reaction tube, and the measured values of the plurality of temperature sensors, respectively.
  • a control unit configured to control the heater.
  • FIG. 1 It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus used suitably by one Embodiment of this invention, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view. It is a schematic block diagram which shows the furnace port periphery structure of the reaction tube of the substrate processing apparatus used suitably by one Embodiment of this invention, and is a figure which shows a furnace port periphery by a horizontal sectional view.
  • A is a longitudinal cross-sectional view which shows the structure of one form of a heater unit, and the structure of the periphery of the said heater unit.
  • (B) is the longitudinal cross-sectional view of the heater unit in the dashed-dotted line seen from the direction A shown to (a).
  • (A) is a longitudinal cross-sectional view which shows the structure of the other form of a heater unit, and the structure of the periphery of the said heater unit.
  • (B) is the longitudinal cross-sectional view of the heater unit in the dashed-dotted line seen from the direction A shown to (a).
  • (A) is a longitudinal cross-sectional view which shows the structure of the other form of a heater unit, and the structure of the periphery of a heater unit.
  • (B) is the longitudinal cross-sectional view of the heater unit in the dashed-dotted line seen from the direction A shown to (a).
  • the longitudinal cross-sectional view which shows the structure of a soaking
  • the longitudinal cross-sectional view of the heater unit which shows the attachment structure of the side wall temperature sensor attached to a heater unit.
  • the flowchart which shows an example of a substrate processing process.
  • the schematic block diagram which shows the position of the temperature monitoring points A-N in an Example.
  • the schematic block diagram which shows the structure of a comparative example, and the position of temperature monitoring point AN.
  • the graph which shows the measurement result of the temperature in the temperature monitor points A-N in each of an Example and a comparative example.
  • the processing furnace 202 includes a reaction tube 203.
  • the reaction tube 203 is made of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is configured as a cylindrical member having a furnace port (opening) at the lower end.
  • a processing chamber 201 is formed in the cylindrical hollow portion of the reaction tube 203.
  • the processing chamber 201 includes a wafer storage area A (hereinafter referred to as area A) as a first area for storing a wafer 200 as a substrate, and a furnace port peripheral area as a second area provided below the area A in the vertical direction. B (hereinafter referred to as region B) is provided inside.
  • a seal cap 219 is provided as a lid that can airtightly close the lower end opening of the reaction tube 203.
  • a rotation mechanism 267 is installed below the seal cap 219.
  • the seal cap 219 is formed in a disc shape, and is configured such that an upper surface base portion 219a constituting the upper surface side and a lower surface base portion 219b constituting the lower surface side are laminated.
  • the upper surface base portion 219a is made of a nonmetallic member such as quartz, and has a thickness of about 10 to 20 mm.
  • the lower surface base portion 219b is made of a metal member such as SUS.
  • a rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217.
  • the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
  • a bearing portion 219s of the rotating shaft 255 provided on the rotating shaft 255 is configured as a fluid seal such as a magnetic seal.
  • the seal cap 219 is raised and lowered in the vertical direction by a boat elevator 115 installed below the reaction tube 203.
  • the boat elevator 115 is configured as a transfer mechanism that loads and unloads (transfers) the boat 217, that is, the wafer 200 into and out of the processing chamber 201 by moving the seal cap 219 up and down.
  • the boat 217 as a substrate support is configured to support a plurality of, for example, 25 to 200, wafers 200 in a multi-stage manner by aligning them vertically in a horizontal posture and with their centers aligned. It is configured to arrange at intervals.
  • the boat 217 is made of a heat-resistant material such as quartz or SiC, and includes a top plate 217a and a bottom plate 217b above and below.
  • the heat insulator 218 supported in a multi-stage at a lower position of the boat 217 is made of a heat resistant material such as quartz or SiC, and is configured to suppress heat conduction between the region A and the region B. .
  • the heat insulator 218 can also be considered as a part of the components of the boat 217.
  • a heater 207 as a first heating unit and a heater 208 as a second heating unit are provided outside the reaction tube 203. Electric power is supplied from the heater power supply unit 210 to the heaters 207 and 208.
  • the heater 207 is vertically installed so as to surround the area A.
  • the heater 207 is controlled so as to heat the wafer 200 accommodated in the region A to a predetermined temperature in a substrate processing step to be described later.
  • the heater 208 is provided vertically below the heater 207 so as to surround the region B.
  • the heater 208 includes a plurality of heater units (heater units 208a to 208d) arranged (divided) in the outer peripheral direction of the reaction tube 203.
  • the heater 208 is controlled to maintain the temperature of the side wall around the furnace port of the reaction tube 203 and the temperature of the piping at predetermined temperatures in the substrate processing step described later.
  • the side wall around the furnace port of the reaction tube 203 is simply referred to as a furnace port side wall.
  • a temperature sensor protective tube 263 a that penetrates the side wall of the reaction tube 203 from the outside to the inside and extends along the inner wall of the reaction tube 203 is provided.
  • a temperature sensor 263 as a temperature detection unit is inserted from the outside of the reaction tube 203 and provided in the temperature sensor protection tube 263a. Based on the temperature information detected by the temperature sensor 263, the output of the heater 207 is adjusted.
  • the temperature sensor 263 is mainly composed of a thermocouple. A plurality of temperature sensors 263 and temperature sensor protective tubes 263a may be provided.
  • a gas supply pipe 232 a for supplying vaporized gas into the processing chamber 201 is connected to the side wall of the reaction pipe 203.
  • the gas supply pipe 232a penetrates the side wall in the vicinity of the furnace port of the reaction tube 203 (that is, around the region B) from the outside to the inside, and extends to the vicinity of the upper end along the inner wall of the reaction tube 203.
  • the gas supply port 232p is configured. Note that a plurality of gas supply pipes 232a having different heights may be provided, and the vaporized gas may be supplied into the processing chamber 201 from the gas supply ports provided at the respective upper ends.
  • the gas supply pipe 232a is provided with a gas generator 250a, a mass flow controller (MFC) 241a that is a flow rate controller (flow rate control unit), and a valve 243a that is an on-off valve in order from the upstream side.
  • the gas generator 250a is connected to a liquid supply pipe that supplies hydrogen peroxide as a liquid source, a carrier gas supply pipe that supplies a carrier gas used to vaporize the liquid, and the like.
  • the hydrogen peroxide solution is an aqueous solution obtained by dissolving hydrogen peroxide (H 2 O 2 ), which is liquid at room temperature, in water (H 2 O) as a solvent.
  • the gas generator 250a generates vaporized gas by, for example, heating the hydrogen peroxide solution to a predetermined temperature (vaporization temperature) and vaporizing or misting it.
  • the vaporized gas contains gaseous or mist-like H 2 O 2 and water vapor (H 2 O gas) at predetermined concentrations.
  • H 2 O 2 contained in the vaporized gas is a kind of active oxygen, is unstable and easily releases O, generates OH radicals, and acts as an oxidizing agent (O source) having a very strong oxidizing power. To do.
  • the gas supply pipe 232a, the MFC 241a, and the valve 243a constitute a vaporized gas supply system.
  • An exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is connected to the side wall of the reaction tube 203 near the furnace port (around the furnace port).
  • a vacuum pump 246 as an exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector for detecting the pressure in the processing chamber 201 and an APC valve 244 as a pressure regulator.
  • the APC valve 244 can perform evacuation and evacuation stop in the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is activated, and further, with the vacuum pump 246 activated,
  • the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 245.
  • An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, and the pressure sensor 245.
  • the vacuum pump 246 may be included in the exhaust system.
  • the heater 208 is mainly configured as follows to prevent these local low-temperature regions and high-temperature regions from occurring.
  • the heater unit 208 a is a portion of the side wall of the furnace port portion where the pipes such as the gas supply pipe 232 a, the temperature sensor protection pipe 263 a, and the exhaust pipe 231 are not connected (hereinafter referred to as “flat part”).
  • a unit arranged to heat a region (sometimes referred to as a “region”).
  • two heater units 208a (208a and 208a ′) are provided.
  • the heater unit 208b includes a peripheral portion of a portion where the gas supply pipe 232a is connected on the side wall of the furnace port, and a peripheral portion of the connection portion exposed outside the reaction tube 203 of the gas supply pipe 232a.
  • the heater unit 208c includes a peripheral portion of a portion where the temperature sensor protective tube 263a is connected on the side wall of the furnace port portion, and a peripheral portion of a connected portion which is exposed outside the reaction tube 203 of the temperature sensor protective tube 263a. , And a unit arranged to heat. That is, the heater unit 208c is configured to heat both the side wall of the reaction tube 203 and the temperature sensor protection tube 263a.
  • the heater unit 208d is a unit arranged to heat a peripheral portion of a connection portion with the reaction tube 203 in the exhaust pipe 231.
  • peripheral part of the location where the piping such as the gas supply pipe 232a, the temperature sensor protection pipe 263a, the exhaust pipe 231 and the like is connected is collectively referred to as a “projection part region” hereinafter. There is.
  • each of the heater units 208a to 208c can include a side wall temperature sensor (303a, 303b) that measures the outer peripheral surface temperature of the furnace port side wall. At least a plurality of side wall temperature sensors are provided at positions spaced apart in the outer circumferential direction. By controlling the heater 208 based on the temperatures respectively measured by the plurality of side wall temperature sensors, the temperature of the side wall of the reaction tube 203 can be heated to be uniform in the outer circumferential direction. Note that at least two or more side wall temperature sensors may be provided in the heater 208, and all of the heater units 208a to 208c do not have to include the side wall temperature sensor.
  • each of the heater units 208b to 208d can include a gas supply pipe temperature sensor 304b and an exhaust pipe temperature sensor 304d for measuring the temperature around the pipe such as the gas supply pipe 232a. ing.
  • the heater 208 By controlling the heater 208 based on the temperatures measured by the temperature sensors around these pipes, the pipes connected to the reaction tube 203 are individually heated, and the temperature of the side wall of the reaction tube 203 is more increased in the outer circumferential direction. It can be heated to be precisely uniform.
  • the heater units 208a to 208d are connected to the heater power supply unit 210, and the heater power supply unit 210 is configured to supply power to the heater units 208a to 208c. Further, the plurality of side wall temperature sensors are connected to a controller 121 as a control unit to be described later, and the controller 121 supplies power to the heater units 208a to 208d via the heater power supply unit 210 based on the measured temperature. Are configured to be controlled individually. By individually controlling the temperature of each of the plurality of heater units arranged in the outer peripheral direction of the reaction tube 203, it becomes easy to uniformly heat the furnace port side wall in the circumferential direction. Each of the heater units 208a to 208d may include an individual heater power supply unit and may be configured to be controlled by the controller 121.
  • the heater unit 208a is disposed along the outer periphery of the side wall of the furnace port. More specifically, the heater unit 208 a is placed on a flange that forms the lower end of the reaction tube 203 via an O-ring protection part 273. In addition, a partition portion 308 formed of SUS or the like is provided between the heater unit 208a and the heater 207, and in order to suppress heat influence from the heater 207 and heat escape from the heater unit 208a. Material 307 is filled.
  • the seal cap 219 has relatively few protruding structures such as the gas supply pipe 232a around the furnace port of the reaction tube 203. Therefore, it is relatively easy to heat the seal cap 219 evenly with the cap 209.
  • an O-ring 220a is provided as a seal member that contacts the lower end of the reaction tube 203. Further, an O-ring 220b as a seal member that comes into contact with the lower surface of the upper surface base portion 219a is provided on the upper surface of the lower surface base portion 219b.
  • the refrigerant flow path 274 provided in the O-ring protection part 273 and the refrigerant flow path 270 provided in the lower surface base 219b are respectively set so that the O-ring 220a and the O-ring 220b are not heated to a predetermined temperature or higher. It is configured to cool.
  • the heater unit 208a includes a heating wire 301a, a heating wire storage unit 305 integrally formed in a block shape for storing the heating wire 301a, and a heater cover 306 provided so as to surround the heating wire storage unit 305.
  • the side wall temperature sensor 303a which measures the outer peripheral surface temperature of the furnace port part side wall arrange
  • the exothermic wire 301a is formed of a spiral (spring-like) Kanthal wire or the like, and is provided at a position facing the outer periphery of the reaction tube 203 along the circumferential direction of the outer periphery.
  • the heating wire 301a is composed of one or a plurality of parallel heating wires. In order to heat the side wall of the reaction tube 203 evenly in the height direction, it is preferable to use a plurality of parallel heating lines.
  • the heating wire 301a is composed of four Kanthal wires arranged in parallel to each other.
  • the heating line 301a is constituted by a plurality of independent heating lines, but four parallel heating lines are formed by folding a single Kanthal line a plurality of times. You can also.
  • the heating wire 301a it is particularly preferable to use a wire having a characteristic that the peak wavelength of the heat rays radiated when generating heat at around 80 to 100 ° C. is around 5 to 10 ⁇ m (for example, Kanthal wire). These wavelengths are easily absorbed by quartz and are suitable for efficiently heating structures such as the reaction tube 203 and the gas supply tube 232a formed of quartz. The same applies to heating lines 301b, 302b, and 302d described later.
  • the heating wire storage portion 305 is formed of a low thermal conductivity material (thermal conductivity is 0.3 W / m ⁇ K or less) such as a porous industrial alumina board, and between the heating wires constituting the heating wire 301a. Temperature interference is suppressed. That is, the heating wire storage unit 305 functions as a separation member that prevents temperature interference between the heating wires.
  • a low thermal conductivity material thermal conductivity is 0.3 W / m ⁇ K or less
  • the heat generation amount of the heat generation lines arranged at the upper and lower ends among the plurality of heat generation lines arranged in parallel is larger than the heat generation amount of the other heat generation lines sandwiched between those heat generation lines.
  • the heating wire 301a By configuring the heating wire 301a to be large, the side wall of the reaction tube 203 is heated evenly in the height direction. More specifically, the thickness of the heating lines arranged at the upper and lower ends is configured to be thinner than the thickness of other heating lines sandwiched between the heating lines. Thereby, the electric resistance value of each heating wire is made different so that the heating value is made different for the same supply current amount.
  • the electric power supplied from the heater power supply unit 210 to the heating wire 301a is controlled by the controller 121 mainly based on the measured temperature of the side wall temperature sensor 303a.
  • the supplied power can be controlled based on the measured temperature of the side wall temperature sensor provided in another heater unit.
  • the supplied power can be controlled based on both the measured temperature of the sidewall temperature sensor 303a and the measured temperature of the other sidewall temperature sensor.
  • Heat unit 208b The configuration of the heater unit 208b and its periphery will be described in detail below with reference to FIGS. 4 (a) and 4 (b). Similarly to the heater unit 208a, the heater unit 208b is disposed along the outer periphery of the side wall of the furnace port. Among the specific configurations, the same components as those of the heater unit 208a and its surroundings are denoted by the same reference numerals in FIGS. 4A and 4B, and description thereof is omitted.
  • the heater unit 208b includes a heating line 301b and a heating line 302b, a heating line storage unit 305 that stores the heating lines 301a and 302b, and a gas supply pipe temperature sensor 304b as a pipe temperature sensor that measures the temperature in the vicinity of the gas supply pipe 232a.
  • a gas supply pipe temperature sensor 304b as a pipe temperature sensor that measures the temperature in the vicinity of the gas supply pipe 232a.
  • the side wall temperature sensor 303b which measures the outer peripheral surface temperature of a furnace port part side wall can be provided similarly to the heater unit 208a.
  • the gas supply pipe temperature sensor 304b may directly measure the temperature of the gas supply pipe 232a itself as long as the temperature state of the gas supply pipe 232a in the vicinity of the side wall of the reaction tube 203 can be grasped.
  • the heating wire 301b is provided along the circumferential direction of the outer periphery at a position facing the outer periphery of the reaction tube 203, and has the same configuration as the heating wire 301a. However, unlike the heating wire 301a, the heating wire 301b is disposed only at a position that avoids the position where the gas supply pipe 232a is disposed.
  • the heating wire 302b is composed of one or a plurality of heating wires arranged in the vicinity of the gas supply pipe 232a and arranged along the extending direction of the gas supply pipe 232a (parallel to the extending direction).
  • these heating lines are arranged so as to surround the gas supply pipe 232a.
  • only the exothermic wire 301b heats only the portion immediately adjacent to the side wall of the reaction tube 203 among the gas supply tube 232a protruding from the side wall of the reaction tube 203, and sufficiently heats the gas supply tube 232a in the extending direction. Is difficult. Therefore, heat escape from the side wall of the reaction tube 203 to the gas supply tube 232a cannot be prevented.
  • the heating wire 302b since the heating wire 302b is arranged in parallel to the gas supply pipe 232a, the gas supply pipe 232a can be heated uniformly in the extending direction.
  • the gas supply pipe temperature measurement sensor 304b is inserted into the heating wire storage unit 305 in parallel to the gas supply pipe 232a. It is preferable that the heating lines 302b are spaced apart from each other by a uniform distance.
  • the heating wire storage unit 305 is configured as an integrally formed member (storage block) that stores the heating wire 301b and the heating wire 302b, and suppresses temperature interference between the heating wire 301b and the heating wire 302b.
  • the temperatures (supply power) of the heating wire 301b and the heating wire 302b are individually controlled by the control unit, and the side wall of the reaction tube 203 and the gas supply tube 232a are individually heated.
  • independent and precise heating control can be easily performed on the side wall of the reaction tube 203 and the gas supply tube 232a.
  • the power supply from the heater power supply unit 210 to the heating wire 301b and the heating wire 302b is individually controlled by the controller 121.
  • the controller 121 controls the power supplied to the heating wire 301b via the heater power supply unit 210 mainly based on the measured temperature of the side wall temperature sensor 303b.
  • the controller 121 controls the power supplied to the heating wire 302b through the heater power supply unit 210 mainly based on the measured temperature of the gas supply pipe temperature sensor 304b.
  • the power supplied to at least one of the heating wire 301b and the heating wire 302b can be controlled based on both the measured temperature of the side wall temperature sensor 303b and the measured temperature of the gas supply pipe temperature sensor 204b.
  • one gas supply pipe 232a is connected to the protruding region on the side wall of the reaction tube 203 in which the heater unit 208b is disposed.
  • a modification in which a plurality of gas supply pipes are connected to the projecting region where one heater unit heater is disposed is conceivable.
  • 5A and 5B show the configuration of the heater unit 208b-1 and its surroundings in this modification. Among the specific configurations, the same components as those of the heater unit 208b and its surroundings are denoted by the same reference numerals in FIGS. 5A and 5B, and description thereof is omitted.
  • the heater unit 208b-1 is provided with one or a plurality of heating wires 302b for each of the plurality of gas supply pipes 232a.
  • the heating wire 302b is arranged in parallel to the gas supply pipe 232a, so that the gas supply pipe is heated evenly even when the interval between the gas supply pipes is narrow. Can do.
  • the heat generation lines 302b are arranged between the adjacent gas supply pipes 232a so that the plurality of gas supply pipes are heated by one heat generation line. Can do.
  • the gas supply pipe temperature measurement sensor 304b is provided for at least one of the plurality of gas supply pipes 232a, but may be provided for each of the plurality of gas supply pipes 232a.
  • Heat unit 208c The configuration of the heater unit 208c and its periphery is the same as that of the heater unit 208b.
  • the heater unit 208b heats the connection location of the gas supply pipe 232a, whereas the heater unit 208c differs only in heating the connection location of the temperature sensor protection pipe 263a.
  • Heat unit 208d Similarly to the heater units 208a to 208c, the heater unit 208d is disposed along the outer periphery of the side wall of the furnace port. The configuration of the heater unit 208d and its periphery will be described in detail below with reference to FIG.
  • the heater unit 208d includes a heating wire 302d, a storage member 305a that stores the heating wire 302d, storage members 305b and 305c that do not store the heating wire 302d, and an exhaust pipe 231 between the outer periphery of the exhaust pipe 231 and the heating wire 302d.
  • a soaking sheet 320 is provided so as to cover it.
  • an exhaust pipe temperature sensor 304d similarly to the gas supply pipe temperature sensor 304b in the heater unit 208b, an exhaust pipe temperature sensor 304d as a pipe temperature sensor for measuring the temperature in the vicinity of the exhaust pipe 231 can be provided.
  • the heating line 302d is configured by a plurality of heating lines arranged in the vicinity of the exhaust pipe 231 and in parallel with the exhaust pipe 231 similarly to the heating line 302b.
  • the heating wire 302d may not be disposed so as to surround the entire outer peripheral surface of the exhaust pipe 231. Therefore, the heater unit 208d is arranged so that at least one of these heat generation lines extends along only a part of the outer peripheral surface of the exhaust pipe 231 and is not disposed at a position along the remaining outer peripheral surface where the heat generation lines cannot be arranged. .
  • the storage members 305a to 305c are made of a low thermal conductivity material, similar to the heating wire storage portion 305. In addition, the storage members 305a to 305c are divided to facilitate attachment to the exhaust pipe 231.
  • the soaking sheet 320 conducts heat from the heating wire 302d disposed along only a part of the outer peripheral surface of the exhaust pipe 231 to the entire outer peripheral surface, and uniformly heats the outer peripheral surface of the exhaust pipe 231. It is provided as follows.
  • the soaking sheet 320 is made of an insulating material 321 made of a material such as alumina cloth, a high heat conductive material 322 made of a material such as an aluminum sheet, and a material such as a carbon sheet.
  • the structured cushioning material 323 is laminated and disposed.
  • the high heat conductive material 322 is disposed on the side close to the heating wire 302d, and conducts the heat of the heating wire 302d evenly in the entire outer circumferential direction of the exhaust pipe 231.
  • the cushion material 323 is disposed on the side close to the exhaust pipe 231, and causes the soaking sheet 320 to adhere to the outer peripheral surface of the exhaust pipe 231.
  • the thickness of the soaking sheet 320 is about 3 to 5 mm.
  • the soaking sheet 320 By providing the soaking sheet 320, local high temperature portions are suppressed from being generated on the outer peripheral surface of the exhaust pipe 231 facing the heating line 302d, and on the outer peripheral surface of the exhaust pipe 231 where the heating line 302d is not disposed. Generation of a local low temperature part can be suppressed.
  • the electric power supplied from the heater power supply unit 210 to the heating wire 302d is controlled by the controller 121 mainly based on the measured temperature of the exhaust pipe temperature sensor or the side wall temperature sensor provided in another heater unit.
  • the tip part which is the temperature measurement sensor part of the side wall temperature sensor 303a is in contact with the furnace port part side wall by the structure shown in FIG.
  • a fixing member 309 is fixed to the heater cover 306, and a spring 310, which is an elastic member, is provided between the protruding portion of the side wall temperature sensor 303a and the fixing member 309.
  • the spring 310 is configured to press the side wall temperature sensor 303a against the side wall of the reaction tube 203 with the fixing member 309 as a fulcrum.
  • the side wall temperature sensor 303b is also installed with a similar structure.
  • the flat region on the side wall of the reaction tube 203 where the heater unit 208a is installed is likely to be hotter than the projecting region where the heater units 208b, 208c and 208d are installed, and conversely, the projecting region is a flat region.
  • the temperature tends to be lower than that. This is because heat escape from the protruding portion such as the gas supply pipe 232a hardly occurs in the flat portion region, and the area in which the heating lines 301b and 301c are arranged in the protruding portion region is uniform. The reason is that it is difficult to heat properly.
  • the side wall temperature sensor 303a is provided in the heater unit 208a that heats the longest flat portion region
  • the side wall temperature sensor 303a ′ is provided in the heater unit 208a ′ disposed at a position facing the heater 208a
  • the protruding portion region is provided.
  • a side wall temperature sensor 303b is provided in the heater unit 208b ′ for heating the heater.
  • the side wall temperature sensors are arranged at these positions with heater control points at positions separated from each other in the outer peripheral direction of the reaction tube 203, the temperature of the side wall of the reaction tube 203 is determined based on the temperature measured at each position.
  • the heater units 208a to 208d can be individually controlled so as to be uniform in the outer circumferential direction.
  • the target temperature value (first target temperature) measured by the side wall temperature sensors 303a and 303a ′ for measuring the temperature of the flat portion region that is likely to become high is as follows. It is preferable to set the temperature lower than the target value (second target temperature) of the temperature measured by the side wall temperature sensor 303b that measures the temperature of the protruding region that tends to be low. This makes it easy to control the heater 208 so that the temperature of the side wall of the reaction tube 203 is uniform in the outer circumferential direction.
  • the heater units 208a and 208a ′ are mainly arranged so that the temperature measured by the side wall temperature sensors 303a and 303a ′ that measure the temperature of the flat region does not exceed a predetermined temperature (for example, a first upper limit temperature described later). By controlling, it becomes easy to prevent a local high temperature region from being generated on the side wall around the furnace port.
  • a predetermined temperature for example, a first upper limit temperature described later.
  • the heater unit 208b ′ controls the heater unit 208b ′ so that the temperature measured by the side wall temperature sensor 303b that measures the temperature of the protruding region does not become lower than a predetermined temperature (for example, a first lower limit temperature described later), It becomes easy to prevent a local low temperature region from occurring on the side wall around the furnace port.
  • a predetermined temperature for example, a first lower limit temperature described later
  • the heater 208 it is possible to more easily control the heater 208 so that the temperature of the side wall of the reaction tube 203 falls within a predetermined temperature range (for example, the first lower limit temperature or higher and the first upper limit temperature or lower) in the outer peripheral direction. .
  • a predetermined temperature range for example, the first lower limit temperature or higher and the first upper limit temperature or lower
  • three sidewall temperature sensors are provided.
  • at least one sidewall temperature sensor is provided for each of the flat region where the heater unit 208a is disposed and the protruding region where the heater units 208b to 208d are disposed.
  • the above-described effects can be obtained.
  • the heater units 208a to 208d are connected to each other by a structure in which crank-shaped end faces are combined as shown in FIG.
  • the outer peripheral surfaces of the connection portions of the heater units 208a to 208d are covered (covered) with a protective cover 330 made of a material such as SUS.
  • the controller 121 as a control unit is configured as a computer including a CPU 121a, a RAM 121b, a storage device 121c, and an I / O port 121d.
  • the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e.
  • An input / output device 122 configured as a touch panel or the like is connected to the controller 121.
  • the storage device 121c is configured by a flash memory, an HDD, or the like.
  • a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
  • the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 121 to execute each procedure described later, and functions as a program.
  • the process recipe, the control program, and the like are collectively referred to simply as a program.
  • the process recipe is also simply called a recipe.
  • program When the term “program” is used in this specification, it may include only a recipe, only a control program, or both.
  • the RAM 121b is configured as a memory area that temporarily stores programs, data, and the like read by the CPU 121a.
  • the I / O port 121d includes the MFC 241a, the valve 243a, the gas generator 250a, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the heater power supply unit 210, the temperature sensor 263, the side wall temperature sensors 303a and 303b, and the gas supply pipe.
  • the temperature sensor 304b, the exhaust pipe temperature sensor 304d, the rotation mechanism 267, the boat elevator 115, and the like are connected.
  • the CPU 121a is configured to read out and execute a control program from the storage device 121c and to read a recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
  • the CPU 121a performs a gas generation operation by the gas generator 250a, a gas flow rate adjustment operation by the MFC 241a, an opening / closing operation of the valve 243a, a pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, and a vacuum in accordance with the contents of the read recipe.
  • the controller 121 installs the above-mentioned program stored in an external storage device (for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 123 in a computer.
  • an external storage device for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory
  • the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • recording medium When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both of them.
  • the program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.
  • a film having a silazane bond (—Si—N—) (polysilazane film) is formed on the surface of the substrate that is subjected to predetermined processing in the substrate processing step.
  • this film contains nitrogen (N) and hydrogen (H), and may further contain carbon (C) and other impurities.
  • the polysilazane film formed on the wafer 200 is modified (oxidized) by supplying a vaporized gas containing H 2 O 2 under a relatively low temperature condition.
  • a plurality of wafers 200 having a polysilazane film formed on the surface are loaded into a boat 217. Thereafter, as shown in FIG. 1, the boat 217 that supports the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201. In this state, the seal cap 219 is in a state of sealing the lower end of the reaction tube 203 via the O-ring 220a.
  • the inside of the processing chamber 201 is evacuated by the vacuum pump 246 so that the space in which the wafer 200 exists, that is, the space where the wafer 200 exists becomes a predetermined pressure (reforming pressure). Further, the reaction tube 203, the wafer 200 accommodated in the processing chamber 201, the seal cap 219, and the like are heated by the heaters 207 and 208 and the cap heater 209.
  • the state of energization from the heater power supply unit 210 to the heater 207 is feedback controlled based on the temperature information detected by the temperature sensor 263 so that the wafer 200 accommodated in the region A has a predetermined temperature.
  • the side wall of the furnace port portion of the reaction tube 203 is detected.
  • the temperature and the temperature of the gas supply pipe 232a, the temperature sensor protection pipe 263a, and the exhaust pipe 231 are each set to a predetermined temperature (or a predetermined temperature distribution). The state of energization is feedback controlled.
  • the feedback control of the heaters 207 and 208 is continuously performed at least until the processing on the wafer 200 is completed. Further, the rotation of the wafer 200 by the rotation mechanism 267 is started. The operation of the vacuum pump 246 and the heating and rotation of the wafer 200 are continuously performed at least until the processing on the wafer 200 is completed.
  • valve 243a is closed and the supply of the vaporized gas into the processing chamber 201 is stopped.
  • Examples of the processing conditions for the reforming step include the following. H 2 O 2 concentration of liquid raw material: 20 to 40%, preferably 25 to 35% Liquid raw material vaporization conditions: Heated to 120 to 200 ° C. at approximately atmospheric pressure Reforming pressure: 700 to 1000 hPa (any of atmospheric pressure, slightly reduced pressure, and slightly increased pressure) Wafer 200 temperature: 70 to 110 ° C., preferably 70 to 80 ° C.
  • the vaporized gas supplied into the processing chamber 201 is liquefied in the processing chamber 201, and the liquid thus generated can stay around the furnace port (such as the upper surface of the seal cap 219).
  • the furnace port such as the upper surface of the seal cap 219.
  • the gas supply pipe 232a in the processing chamber 201, the temperature sensor protection pipe 263a, and the like a local low temperature region may be generated as described above, and the locally generated low temperature region is contacted. By doing so, the vaporized gas tends to re-liquefy.
  • the heater 208 configured as described above, the side wall of the furnace port of the reaction tube 203 and the like are heated evenly, and a local low temperature region is prevented from being generated.
  • temperature control is performed so that a region below a predetermined temperature (first lower limit temperature) does not occur on the side wall and the like around the furnace port.
  • the lower limit temperature varies depending on conditions such as the concentration of vaporized gas, but is, for example, 80 ° C. or higher under the above-described processing conditions.
  • the liquid generated by re-liquefaction of the vaporized gas tends to be in a state where H 2 O 2 is concentrated to a high concentration, that is, a high concentration H 2 O 2 solution. Further, the retained high concentration H 2 O 2 liquid tends to change to a state in which H 2 O 2 is further concentrated to a higher concentration.
  • the high-concentration H 2 O 2 liquid is very reactive and has a strong corrosive action, which may cause serious damage to the furnace port member.
  • H 2 O 2 is O 2 gas and the H 2 O gas contained in the high concentration H 2 O 2 solution
  • the explosive decomposition reaction means that a liquid containing H 2 O 2 is rapidly decomposed into oxygen gas (O 2 ) and water vapor (H 2 O) and expands to explode, burn, or close to these. It is to cause a phenomenon.
  • An explosive decomposition reaction can occur when the H 2 O 2 liquid exceeds a certain temperature (explosion critical temperature) at a certain H 2 O 2 liquid concentration and pressure. Therefore, the high concentration H 2 O 2 liquid retained by reliquefaction must be maintained so as not to exceed the explosion critical temperature.
  • the explosion critical temperature varies depending on the concentration of H 2 O 2 in the high-concentration H 2 O 2 liquid, and specifically decreases as the concentration of H 2 O 2 increases.
  • the lowering of the explosion critical temperature becomes the lower limit when the concentration of the high concentration H 2 O 2 liquid reaches 100%. Therefore, when the treatment pressure is atmospheric pressure, the temperature of the high concentration H 2 O 2 liquid is maintained at a temperature lower than 112 ° C., which is the explosion critical temperature when the concentration is 100%. Occurrence can be reliably avoided.
  • the side wall and the like of the furnace port of the reaction tube 203 are evenly heated to prevent the occurrence of a local high temperature region.
  • temperature control is performed so that a region exceeding a predetermined temperature (first upper limit temperature) does not occur on the side wall around the furnace port. I do.
  • the first upper limit temperature is 112 ° C. or lower when the processing pressure is atmospheric pressure.
  • the present embodiment is applied when performing temperature control in a temperature region (that is, a temperature region of 120 ° C. or lower, more preferably 100 ° C. or lower) in which the influence of heat transfer by heat conduction is larger than that of heat transfer by radiation.
  • a temperature region that is, a temperature region of 120 ° C. or lower, more preferably 100 ° C. or lower
  • temperature controllability can be improved.
  • the heating control by the cap heater 209 can be maintained within the temperature range so that the temperature controllability by the heater 208 can be maintained.
  • the heater 207 is controlled to heat the wafer 200 to a temperature higher than the above-described reforming temperature. By maintaining this temperature, the wafer 200 and the inside of the processing chamber 201 are gently dried.
  • the seal cap 219 is lowered by the boat elevator 115 and the lower end of the reaction tube 203 is opened. Then, the processed wafer 200 is unloaded from the lower end of the reaction tube 203 to the outside of the reaction tube 203.
  • Example An example of the present embodiment and a comparative example will be described below.
  • the temperature of the heater 208 in this embodiment was controlled, and the temperatures at the temperature monitoring points A to N shown in FIG. 12 were measured.
  • Monitor points A to H are points on the upper surface base 219a
  • monitor points I to N are points on the outer peripheral surface of the side wall around the furnace port.
  • temperature control is performed by a heater having the following configuration in place of the heater 208 of the present embodiment, and temperature monitoring points A, B, E, F, I, K, L are performed in the same manner as in the examples.
  • N were measured.
  • the control was performed by setting the target temperature at the monitor points A to H to 80 to 112 ° C.
  • the substrate processing apparatus in the comparative example includes a heater 400 that heats the side wall around the furnace port, and a jacket heater 401 that heats the protruding portion such as the gas supply pipe 232a.
  • the heater 400 does not include the side wall temperature sensor 303a of this embodiment, and is configured to perform temperature control only by the heater output.
  • the jacket heater 401 is installed so as to be wound around each protrusion such as the gas supply pipe 232a, and is mainly provided for the purpose of heating only the protrusion.
  • FIG. 14 shows the measurement results of the temperatures at the monitor points A to N in the example and the comparative example.
  • the occurrence of a local high temperature region was particularly noticeable particularly at the monitor points A and I having a large distance from the protruding portion.
  • the result exceeded 112 ° C. as the first upper limit temperature.
  • processing procedure and processing conditions at this time can be the same processing procedure and processing conditions as in the above-described embodiment, for example.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrat comprenant : un tube de réaction dans lequel un substrat est logé; une partie couvercle pour fermer une ouverture de four formée dans le tube de réaction; un dispositif de chauffage disposé sur la périphérie externe d'une paroi latérale à proximité de l'ouverture de four du tube de réaction; une pluralité de capteurs de température respectivement configurés pour mesurer les températures à une pluralité de positions mutuellement différentes dans la direction circonférentielle de la paroi latérale à proximité de l'ouverture de four du tube de réaction; et une unité de commande configurée pour commander le dispositif de chauffage sur la base de valeurs de mesure respectives en fonction de la pluralité de capteurs de température. De cette manière, le chauffage est effectué de façon à empêcher le développement d'écarts locaux dans les températures des éléments dont une chambre de traitement est formée.
PCT/JP2017/012974 2017-03-29 2017-03-29 Dispositif de traitement de substrat, unité de chauffage et procédé de fabrication de dispositif à semiconducteur Ceased WO2018179157A1 (fr)

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PCT/JP2017/012974 WO2018179157A1 (fr) 2017-03-29 2017-03-29 Dispositif de traitement de substrat, unité de chauffage et procédé de fabrication de dispositif à semiconducteur
JP2019508441A JP6730513B2 (ja) 2017-03-29 2017-03-29 基板処理装置、ヒータユニットおよび半導体装置の製造方法
SG11201907981YA SG11201907981YA (en) 2017-03-29 2017-03-29 Substrate processing device, heater unit, and semiconductor device manufacturing method
CN201780088409.5A CN110419095A (zh) 2017-03-29 2017-03-29 基板处理装置、加热单元以及半导体装置的制造方法

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JP2021166238A (ja) * 2020-04-07 2021-10-14 東京エレクトロン株式会社 クリーニング方法及び熱処理装置
KR20210131737A (ko) * 2020-04-24 2021-11-03 주식회사 원익아이피에스 기판 처리 장치 및 온도 제어 방법
KR20210131736A (ko) * 2020-04-24 2021-11-03 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 장치에 이용되는 히터
KR20210131738A (ko) * 2020-04-24 2021-11-03 주식회사 원익아이피에스 기판 처리 장치 및 온도 제어 방법
EP4156235A1 (fr) 2021-09-24 2023-03-29 Kokusai Electric Corp. Appareil de traitement de substrat, utilisation d'un appareil de traitement de substrat, procédé de fabrication d'un dispositif à semi-conducteur et produit de programme informatique

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JP2021166238A (ja) * 2020-04-07 2021-10-14 東京エレクトロン株式会社 クリーニング方法及び熱処理装置
KR20210131737A (ko) * 2020-04-24 2021-11-03 주식회사 원익아이피에스 기판 처리 장치 및 온도 제어 방법
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EP4156235A1 (fr) 2021-09-24 2023-03-29 Kokusai Electric Corp. Appareil de traitement de substrat, utilisation d'un appareil de traitement de substrat, procédé de fabrication d'un dispositif à semi-conducteur et produit de programme informatique
KR20230043676A (ko) 2021-09-24 2023-03-31 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 처리 용기, 반도체 장치의 제조 방법 및 프로그램
US12338529B2 (en) 2021-09-24 2025-06-24 Kokusai Electric Corporation Substrate processing apparatus, process vessel, method of manufacturing semiconductor device and non-transitory tangible medium

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