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WO2018181686A1 - Matériau de correction de gauchissement et procédé de fabrication de boîtier de niveau de tranche de type sortance - Google Patents

Matériau de correction de gauchissement et procédé de fabrication de boîtier de niveau de tranche de type sortance Download PDF

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Publication number
WO2018181686A1
WO2018181686A1 PCT/JP2018/013176 JP2018013176W WO2018181686A1 WO 2018181686 A1 WO2018181686 A1 WO 2018181686A1 JP 2018013176 W JP2018013176 W JP 2018013176W WO 2018181686 A1 WO2018181686 A1 WO 2018181686A1
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WO
WIPO (PCT)
Prior art keywords
compound
warpage
warp correction
correction material
warp
Prior art date
Application number
PCT/JP2018/013176
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English (en)
Japanese (ja)
Inventor
伊藤　秀之
佐藤　和也
康昭 荒井
Original Assignee
太陽インキ製造株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018030738A external-priority patent/JP6423119B2/ja
Application filed by 太陽インキ製造株式会社 filed Critical 太陽インキ製造株式会社
Priority to KR1020197028048A priority Critical patent/KR102339968B1/ko
Priority to CN201880020184.4A priority patent/CN110447097B/zh
Publication of WO2018181686A1 publication Critical patent/WO2018181686A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage

Definitions

  • the present invention relates to a fan-out type warp correction material for a wafer-level package in which an arrangement region of external connection electrodes is larger than a semiconductor planar size.
  • the number of electrodes (terminals and bumps) for external connection of the semiconductor chip tends to increase. Therefore, the pitch of the electrodes for external connection of the semiconductor chip is small. Tend to be. However, it is not always easy to directly mount a semiconductor chip on which bumps are formed at a fine pitch on a circuit board.
  • a semiconductor sealing material region is formed on the outer periphery of the semiconductor chip, and a redistribution layer or a lead frame connected to the electrodes (hereinafter also referred to as “redistribution layer etc.”). It has been proposed to increase the pitch of the bumps by providing also in the region of the semiconductor sealing material.
  • a WLP is called a fan-out type wafer level package (hereinafter sometimes abbreviated as FO-WLP) because the size of the bump arrangement area is larger than the size of the semiconductor chip.
  • a semiconductor chip In FO-WLP, a semiconductor chip is embedded with a semiconductor sealing material. The circuit surface of the semiconductor chip is exposed to the outside, and a boundary between the semiconductor chip and the semiconductor sealing material is formed. A rewiring layer connected to the electrode of the semiconductor chip is also provided in the region of the semiconductor sealing material that embeds the semiconductor chip, and the bump is electrically connected to the electrode of the semiconductor chip via the rewiring layer or the like. .
  • the pitch of the bumps can be set larger than the pitch of the electrodes of the semiconductor chip.
  • a semiconductor chip or an electronic component is arranged at a certain interval on a support, embedded with a semiconductor sealing material, and the sealing material is heat-cured, and then the support.
  • Pseudo wafer is produced by peeling from the wafer.
  • a rewiring layer or the like is formed from the semiconductor chip circuit surface of the pseudo wafer to the expanded semiconductor sealing material region. In this way, the pitch of the bumps can be set larger than the pitch of the electrodes of the semiconductor chip.
  • a positive sensitive resin is applied to the semiconductor chip circuit surface of the pseudo wafer, pre-baked, and activated with UV light or the like in a region to be opened through a photomask or the like. Irradiate light, then develop using a developer such as TMAH (tetramethylammonium hydroxide), heat cure, oxygen plasma treatment, etc., metal electrode sputtering, and further form a photoresist layer
  • TMAH tetramethylammonium hydroxide
  • heat cure oxygen plasma treatment
  • metal electrode sputtering metal electrode sputtering
  • the wiring is patterned to form a rewiring layer (for example, Japanese Patent Application Laid-Open No. 2013-38270).
  • a thin metal plate is die-cut by an etching technique or a punching process, and is collectively formed by press bending.
  • the circuit surface (that is, the surface on which the insulating film is formed) is mainly due to shrinkage during curing of the insulating film such as photosensitive polyimide between the wirings. Warping deformation that becomes concave occurs. Further, warping deformation in which the circuit surface becomes convex occurs due to shrinkage during curing of the sealing material sealed on the surface opposite to the rewiring layer or the lead frame.
  • a resin layer is formed on one surface of a substrate made of a wafer-like semiconductor, and the entire resin layer is warped and held in a spherical shape, and then the resin layer is cured.
  • FO-WLP is susceptible to the stress generated when the rewiring layer is formed because the package is thinner than the conventional WLP. Therefore, the package is more likely to warp than the conventional one. Further, as proposed in Japanese Patent Application Laid-Open No. 2012-178422, even if the WLP provided with the rewiring layer only on one side is heated to suppress the warpage amount, the mounting temperature of the WLP (for example, 260 ° C.) is reduced. When heated, the rewiring layer and the sealing material expand and warp the package. As a result, there is a problem that peeling occurs between layers inside the package, or some terminals are difficult to connect during mounting.
  • Warping also occurs during heating, so it is not possible to deal with cases where the degree of warpage changes. Further, since the method described in US Patent Publication No. 2010/0252919 is provided with an opposite warp in advance when manufacturing a pseudo wafer, it is difficult to perform fine processing when a rewiring layer is provided. There is a case. Furthermore, Japanese Patent Laid-Open No. 2013-8896 focuses on underfill, and does not consider WLP warpage at all.
  • an object of the present invention is to provide a warp correction material capable of reducing the warpage of WLP by adjusting the warpage amount at the temperature at the time of mounting a fan-out type wafer level package (FO-WLP) or at the room temperature such as wafer transfer. It is to be.
  • the amount of warpage can be suppressed both at the temperature at the time of mounting the semiconductor package and at room temperature such as wafer transfer, and the amount of warpage of FO-WLP.
  • the present inventors have found that a warp correction material using a curable resin composition that can be cured by both active energy rays and heat can effectively generate a warp stress. Furthermore, the warping stress can be controlled by the degree of curing when the curable resin composition is cured, and the degree of curing is related to the absolute value of the difference in glossiness between the surface and the interface when the cured film is formed. It was. And when the difference of the said glossiness was in the fixed range, the knowledge that moderate curvature stress could be produced with the curvature correction material was acquired.
  • the warp correction material according to the present invention is a warp correction material for a fan-out type wafer level package, It consists of a curable resin composition containing a component that can be cured by active energy rays and heat,
  • the warp straightening material is cured by active energy rays and heat to form a flat film-like cured product
  • the cured product has a linear expansion coefficient ⁇ (ppm / ° C.) at 25 ° C. and an elastic modulus ⁇ ( GPa) and thickness ⁇ ( ⁇ m) are expressed by the following relational expression: 2000 ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ 10000 It is characterized by satisfying.
  • the ⁇ ( ⁇ m) is preferably in the range of 15-50.
  • the surface of the cured product is a 60 ° mirror surface.
  • the absolute value of the difference between the reflectance and the 60 ° specular reflectance at the interface between the cured product and the silicon wafer is preferably 10% or less.
  • the curable resin composition preferably includes at least a compound having a hydroxyl group and a compound having an isocyanate group.
  • the molar ratio of the hydroxyl group in the compound having a hydroxyl group to the isocyanate group of the compound having an isocyanate group is preferably 0.1 to 0.9.
  • the compound having a hydroxyl group preferably has two or more hydroxyl groups in one molecule and has a hydroxyl value of 100 (mgKOH / g) or more.
  • the compound having a hydroxyl group or the compound having an isocyanate group has at least one of an isocyanuric group or a benzene ring.
  • a method for manufacturing a fan-out type wafer level package includes: Apply the warp correction material to the same surface as the surface on which the rewiring layer of the pseudo wafer is formed or the opposite surface to form a coating film, Curing the coating film with active energy rays and heat to form a warp correction layer, Including things.
  • the coating is preferably performed by an ink jet method.
  • the thickness of the warp correction layer is preferably in the range of 15 to 50 ⁇ m.
  • the warp straightening material is applied on a JEITA standard silicon wafer and cured by the active energy ray and heat to obtain a flat film-like cured product. Furthermore, it is preferable that the absolute value of the difference between the 60 ° specular reflectance of the cured product surface and the 60 ° specular reflectance at the interface between the cured product and the silicon wafer is 10% or less.
  • a semiconductor package is mounted.
  • the amount of warpage can be suppressed both at temperature and at room temperature such as wafer conveyance, and the warpage of the wafer or package can be reduced while adjusting the amount of warpage of the wafer or package. As a result, a semiconductor package with high quality and reliability can be obtained.
  • the warp correction material according to the present invention is a material for forming a warp correction layer, and is made of a curable resin composition containing an active energy ray and a component that can be cured by heat.
  • an insulating layer is provided on the circuit formation surface of the pseudo wafer together with a rewiring layer, etc.
  • the insulating film material, thickness, pattern, sealing material, thickness Accordingly, the amount of warpage of the pseudo wafer also changes.
  • a warp correction material comprising a curable resin composition that can be cured by active energy rays and heat as described above is obtained by curing a warp correction material by active energy rays and heat to form a flat film-like cured product.
  • the linear expansion coefficient ⁇ (ppm / ° C.) at 25 ° C., the elastic modulus ⁇ (GPa) at 25 ° C., and the thickness ⁇ ( ⁇ m) of the cured product are expressed by the following relational expressions: 2000 ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ 10000 It has been found that the amount of warpage can be suppressed by adjusting so as to satisfy the above conditions, both at the temperature when the semiconductor package is mounted and at room temperature such as wafer conveyance. In other words, the shrinkage stress can be applied to the warp correction layer so as to cancel the shrinkage stress of the rewiring layer, the insulating layer, and the sealing material.
  • the warp correction material according to the present invention may be provided on the surface opposite to the surface on which the FO-WLP rewiring layer or the like is provided, or may be provided on the same surface according to the balance. good.
  • each component which comprises the curable resin composition by this invention is demonstrated.
  • components that can be cured by active energy rays which are essential components contained in the curable resin composition constituting the warp correction material, include curable components that can be cured by radical addition polymerization reaction.
  • Specific examples of the radical addition polymerization reactive component having one or more ethylenically unsaturated groups in the molecule include conventionally known polyester (meth) acrylate, polyether (meth) acrylate, and urethane (meth). Examples thereof include acrylate, carbonate (meth) acrylate, and epoxy (meth) acrylate.
  • glycol diacrylates such as ethylene glycol, methoxytetraethylene glycol, polyethylene glycol, and propylene glycol
  • acrylamides such as N, N-dimethylacrylamide, N-methylolacrylamide, and N, N-dimethylaminopropylacrylamide
  • Aminoalkyl acrylates such as N, N-dimethylaminoethyl acrylate and N, N-dimethylaminopropyl acrylate
  • polyhydric alcohols such as hexanediol, trimethylolpropane, pentaerythritol, dipentaerythritol, tris-hydroxyethyl isocyanurate
  • a polyvalent acrylate such as an ethylene oxide adduct, a propylene oxide adduct, or an ⁇ -caprolactone adduct
  • Acrylates, bisphenol A diacrylates, and polyvalent acrylates such as ethylene oxide adduct
  • compounds such as the following (1) to (11) may be used as curable components that can be cured by radical addition polymerization reaction.
  • a reaction product obtained by reacting a compound having a plurality of phenolic hydroxyl groups in one molecule with an alkylene oxide is reacted with an unsaturated group-containing monocarboxylic acid, and the resulting reaction product is converted to a polybasic acid.
  • (Meth) acrylated acrylic-containing urethane resin (8) During the synthesis of a resin by polyaddition reaction of a diisocyanate with a carboxyl group-containing dialcohol compound and a diol compound, a compound having one isocyanate group and one or more (meth) acryloyl groups in the molecule is added, Terminal (meth) acrylated acrylic-containing urethane resin, (9) An acrylic-containing urethane resin obtained by adding a compound having one hydroxyl group and one or more (meth) acryloyl groups in the molecule during the synthesis of the resin of (5), and terminal (meth) acrylated, (10) An acrylic-containing urethane resin obtained by adding a compound having one isocyanate group and one or more (meth) acryloyl groups in the molecule during the synthesis of the resin of (5) above, and terminally (meth) acrylated; 11) An acrylic-containing polymer obtained by adding a compound having one epoxy group
  • Examples of the photopolymerization initiator that causes radical addition polymerization reaction of the above-described curable component by active energy rays include bis- (2,6-dichlorobenzoyl) phenylphosphine oxide and bis- (2,6-dichlorobenzoyl).
  • oxime esters hereinafter referred to as “oxime ester photopolymerization initiators”
  • ⁇ -aminoacetophenone light which is one of acetophenones.
  • photopolymerization initiators selected from the group consisting of “polymerization initiators” and acylphosphine oxides (hereinafter referred to as “acylphosphine oxide photopolymerization initiators”).
  • oxime ester photopolymerization initiators examples include CGI-325, IRGACURE OXE01, IRGACURE OXE02 manufactured by BASF Japan Ltd., and N-1919 manufactured by ADEKA Corporation.
  • numerator can also be used suitably.
  • the compounding amount of the oxime ester photopolymerization initiator is 0.01 to 5 parts by mass with respect to 100 parts by mass of the radical addition polymerization reactive component having one or more ethylenically unsaturated groups in the molecule. It is preferable.
  • ⁇ -aminoacetophenone photopolymerization initiators include 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropanone-1, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 2- (dimethylamino) -2-[(4-methylphenyl) methyl] -1- [4- (4-morpholinyl) phenyl] -1-butanone, N , N-dimethylaminoacetophenone and the like.
  • Commercially available products include Omnirad® 907, Omnirad 369, Omnirad® 379 manufactured by IGM Resins.
  • acylphosphine oxide photopolymerization initiator examples include the above compounds.
  • Commercially available products include Omnirad TPO, Omnirad 819 manufactured by IGM Resins.
  • the blending amount of the photopolymerization initiator excluding the oxime ester photopolymerization initiator is 0.1 with respect to 100 parts by mass of the radical addition polymerization reactive component having one or more ethylenically unsaturated groups in the molecule.
  • the amount is preferably 30 parts by mass.
  • the photocurability of the curable resin composition is good, the coating film is difficult to peel off, and the coating properties such as chemical resistance are also good.
  • 30 parts by mass or less an effect of reducing outgas is obtained, and light absorption on the surface of the solder resist coating film is good, and the deep curability is hardly lowered. More preferably, it is 0.5 to 15 parts by mass.
  • an oxime ester photopolymerization initiator as a photopolymerization initiator that causes radical addition polymerization reaction with active energy rays, not only can a sufficient amount be obtained, but also when a thermosetting component is blended. Since there is little volatilization of the photopolymerization initiator in the post-heating process during thermosetting and mounting, contamination of a device such as a drying furnace can be reduced.
  • acylphosphine oxide photopolymerization initiator when used, the deep curability at the time of the photoreaction is improved, so that a favorable opening shape can be obtained in terms of resolution.
  • a commercially available photopolymerization initiator that causes radical addition polymerization reaction with active energy rays may be used.
  • JMT-784 manufactured by Yueyang Jinmao Technology Co., Ltd. is preferably used. Can do.
  • Components that can be cured by heat contained in the curable resin composition include amine resins such as melamine resins and benzoguanamine resins, isocyanate compounds, blocked isocyanate compounds, cyclocarbonate compounds, polyfunctional epoxy compounds, polyfunctional oxetane compounds, episulfides.
  • amine resins such as melamine resins and benzoguanamine resins
  • isocyanate compounds blocked isocyanate compounds
  • cyclocarbonate compounds polyfunctional epoxy compounds
  • polyfunctional oxetane compounds polyfunctional oxetane compounds
  • episulfides Known and commonly used thermosetting resins such as resins and melamine derivatives can be used.
  • cyclic (thio) ether groups cyclic (
  • thermosetting component having two or more cyclic (thio) ether groups in the molecule is either one of the three-, four- or five-membered cyclic ether groups in the molecule, or the cyclic thioether group, or two kinds thereof.
  • a compound having at least two epoxy groups in the molecule that is, a polyfunctional epoxy compound, a compound having at least two oxetanyl groups in the molecule, that is, a polyfunctional compound.
  • examples include oxetane compounds, compounds having two or more thioether groups in the molecule, that is, episulfide resins.
  • Examples of the polyfunctional epoxy compound include jER828, jER834, jER1001, jER1004 manufactured by Mitsubishi Chemical Corporation, Epicron 840 manufactured by DIC Corporation, Epicron 850, Epicron 1050, Epicron 2055, and Epototo YD manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. -011, YD-013, YD-127, YD-128, D.C. E. R. 317, D.E. E. R. 331, D.D. E. R. 661, D.D. E. R. 664, Sumi-epoxy ESA-011, ESA-014, ELA-115, ELA-128 manufactured by Sumitomo Chemical Co., Ltd. E. R.
  • A.I. E. R. 331, A.I. E. R. 661, A.I. E. R. 664, etc. (all trade names) bisphenol A type epoxy resin; jERYL903 manufactured by Mitsubishi Chemical Corporation, Epicron 152, Epicron 165 manufactured by DIC Corporation, Epototo YDB-400, YDB-500 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. D. Chemicals manufactured by Dow Chemical Company. E. R. 542, Sumitomo Epoxy ESB-400, ESB-700 manufactured by Sumitomo Chemical Co., Ltd. E. R. 711, A.I. E. R.
  • Brominated epoxy resins such as 714 (both trade names); jER152 and jER154 manufactured by Mitsubishi Chemical Corporation, and D.C. E. N. 431, D.D. E. N. 438, Epicron N-730, Epicron N-770, Epicron N-865 manufactured by DIC Corporation, Epototo YDCN-701, YDCN-704 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd.
  • Epototo YDF-170, YDF-175 Bisphenol F type epoxy resins such as YDF-2004 (all trade names); hydrogenated bisphenol A type epoxy resins such as Epototo ST-2004, ST-2007, ST-3000 (trade names) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.
  • Glycidylamine type epoxy resin such as jER604 manufactured by Mitsubishi Chemical Co., Ltd., Epototo YH-434 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., Sumi-epoxy ELM-120 manufactured by Sumitomo Chemical Co., Ltd.
  • Bisphenol S type epoxy such as xylenol type or biphenol type epoxy resin or mixture thereof; EBPS-200 manufactured by Nippon Kayaku Co., Ltd., EPX-30 manufactured by Asahi Denka Kogyo Co., Ltd., EXA-1514 manufactured by DIC Co., Ltd. Resin; Bisphenol A novolak type epoxy resin such as jER157S (trade name) manufactured by Mitsubishi Chemical Corporation; Tetraphenylolethane type epoxy resin such as jERYL-931 (all trade name) manufactured by Mitsubishi Chemical Corporation; Nissan Chemical Industries Heterocyclic D of TEPIC, etc.
  • These epoxy resins can be used alone or in combination of two or more.
  • a novolac type epoxy resin, a heterocyclic epoxy resin, a bisphenol A type epoxy resin or a mixture thereof is particularly preferable.
  • polyfunctional oxetane compound examples include bis [(3-methyl-3-oxetanylmethoxy) methyl] ether, bis [(3-ethyl-3-oxetanylmethoxy) methyl] ether, 1,4-bis [(3-methyl -3-Oxetanylmethoxy) methyl] benzene, 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, (3-methyl-3-oxetanyl) methyl acrylate, (3-ethyl-3-oxetanyl)
  • polyfunctional oxetanes such as methyl acrylate, (3-methyl-3-oxetanyl) methyl methacrylate, (3-ethyl-3-oxetanyl) methyl methacrylate and oligomers or copolymers thereof, oxetane alcohol and novolak resin, Poly (p-hydroxystyrene
  • episulfide resin examples include bisphenol A type episulfide resin YL7000 manufactured by Mitsubishi Chemical Corporation. Moreover, episulfide resin etc. which replaced the oxygen atom of the epoxy group of the novolak-type epoxy resin with the sulfur atom using the same synthesis method can be used.
  • thermosetting catalyst When using a thermosetting component having two or more cyclic (thio) ether groups in the molecule, it is preferable to add a thermosetting catalyst.
  • thermosetting catalysts include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole.
  • Imidazole derivatives such as 1- (2-cyanoethyl) -2-ethyl-4-methylimidazole; dicyandiamide, benzyldimethylamine, 4- (dimethylamino) -N, N-dimethylbenzylamine, 4-methoxy-N, N -Amine compounds such as dimethylbenzylamine and 4-methyl-N, N-dimethylbenzylamine; hydrazine compounds such as adipic acid dihydrazide and sebacic acid dihydrazide; and phosphorus compounds such as triphenylphosphine.
  • Examples of commercially available products include 2MZ-A, 2MZ-OK, 2PHZ, 2P4BHZ, 2P4MHZ (both trade names of imidazole compounds) manufactured by Shikoku Kasei Kogyo Co., Ltd., U-CAT manufactured by San Apro Co., Ltd. (Registered trademark) 3503N, U-CAT3502T (all are trade names of blocked isocyanate compounds of dimethylamine), DBU, DBN, U-CATSA102, U-CAT5002 (all are bicyclic amidine compounds and salts thereof), etc. .
  • two or more isocyanate groups in one molecule, or Compounds having blocked isocyanate groups can be added.
  • a compound having two or more isocyanate groups or blocked isocyanate groups in one molecule is a compound having two or more isocyanate groups in one molecule, that is, a polyisocyanate compound, or two in one molecule. Examples thereof include compounds having the above blocked isocyanate groups, that is, blocked isocyanate compounds.
  • polyisocyanate compound for example, aromatic polyisocyanate, aliphatic polyisocyanate or alicyclic polyisocyanate is used.
  • aromatic polyisocyanate include 4,4′-diphenylmethane diisocyanate, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, naphthalene-1,5-diisocyanate, o-xylylene diisocyanate, m- Examples include xylylene diisocyanate and 2,4-tolylene dimer.
  • aliphatic polyisocyanate examples include tetramethylene diisocyanate, hexamethylene diisocyanate, methylene diisocyanate, trimethylhexamethylene diisocyanate, 4,4-methylenebis (cyclohexyl isocyanate), and isophorone diisocyanate.
  • alicyclic polyisocyanate examples include bicycloheptane triisocyanate.
  • adduct bodies, burette bodies and isocyanurate bodies of the isocyanate compounds mentioned above may be mentioned.
  • the blocked isocyanate group contained in the blocked isocyanate compound is a group in which the isocyanate group is protected by reaction with a blocking agent and temporarily deactivated. When heated to a predetermined temperature, the blocking agent is dissociated to produce isocyanate groups.
  • the blocked isocyanate compound an addition reaction product of an isocyanate compound and an isocyanate blocking agent is used.
  • the isocyanate compound that can react with the blocking agent include isocyanurate type, biuret type, and adduct type.
  • this isocyanate compound for example, the same aromatic polyisocyanate, aliphatic polyisocyanate or alicyclic polyisocyanate as described above is used.
  • isocyanate blocking agents include phenolic blocking agents such as phenol, cresol, xylenol, chlorophenol and ethylphenol; lactam blocking agents such as ⁇ -caprolactam, ⁇ -valerolactam, ⁇ -butyrolactam and ⁇ -propiolactam Active methylene blocking agents such as ethyl acetoacetate and acetylacetone; methanol, ethanol, propanol, butanol, amyl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, propylene glycol monomethyl ether, Benzyl ether, methyl glycolate, butyl glycolate, diacetone alcohol Alcohol-based blocking agents such as methyl lactate and ethyl lactate; oxime-based blocking agents such as formaldehyde oxime, acetaldoxime, acetoxime, methyl
  • the blocked isocyanate compound may be commercially available, for example, 7950, 7951, 7960, 7961, 7982, 7990, 7991, 7992 (above, manufactured by Baxenden, trade name) Sumijour BL-3175, BL-4165, BL-1100, BL-1265, Death Module TPLS-2957, TPLS-2062, TPLS-2078, TPLS-2117, Desmotherm 2170, Desmotherm 2265 (above, Sumitomo Bayer Urethane Co., Ltd., trade name), Coronate 2512, Coronate 2513 , Coronate 2520 (Akatsuki or more, Nippon Polyurethane Industry Co., Ltd., trade name), B-830, B-815, B-846, B-870, B-874, B-882 (Mitsui Takeda Chemical Co., trade name) ), PA-B80E, 17B-60PX, E402-B80T, MF-B60B, MF
  • two or more blocked isocyanates are formed in the molecule by radical addition polymerization reaction having an ethylenically unsaturated group upon irradiation with active energy such as Karenz MOI-BM and Karenz MOI-BP (trade name, manufactured by Showa Denko KK). You may use the compound which has.
  • the above compounds having two or more isocyanate groups or blocked isocyanate groups in one molecule can be used singly or in combination of two or more.
  • the curable resin composition may contain a blocked isocyanate reaction catalyst.
  • a blocked isocyanate reaction catalyst is organic ammonium salt, organic amidine salt, or imidazole.
  • the reaction catalyst of blocked isocyanate is organic ammonium salt, organic amidine salt, or imidazole.
  • tetraalkylammonium halides, tetraalkylammonium hydroxides, tetraalkylammonium organic acid salts, etc. are used for organic ammonium salts, and 1,8-diazabicyclo [5.4.0] undecene-7 is used for organic amidine salts.
  • DBU 1,5-diazabicyclo [4.3.0] nonene-5
  • DBN 1,5-diazabicyclo [4.3.0] nonene-5
  • phenol salt octylate, oleate, p-toluenesulfonate, and formate. it can.
  • DBU-octylate, DBN-octylate and the like are preferably used.
  • Commercially available products include TOYOCAT-TR20 and TOYOCAT-TRX (manufactured by Tosoh Corporation) for organic ammonium salts, U-CAT SA1, U-CAT SA102, U-CAT SA106, U-CAT SA506, U-CAT for organic amidine salts.
  • Examples of SA603, U-CAT SA1102 (manufactured by Sun Apro Co., Ltd.), and imidazole include TOYOCAT-DMI (manufactured by Tosoh Corporation). These reaction catalysts can be used alone or in combination of two or more.
  • the curable resin composition constituting the warp correction material of the present invention may contain a compound having two or more hydroxyl groups capable of reacting with an isocyanate group or a compound having a blocked isocyanate group.
  • the compound having two or more hydroxyl groups include polyol resin, polyvinyl butyral resin, polyvinyl acetal resin, polycarbonate diol, ethylene glycol, diethylene glycol, triethylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,5 -Pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12- Dodecanediol, 1,2-propylene glycol, dipropylene glycol, tripropylene glycol, 1,3-but
  • two or more compounds having a hydroxyl group that reacts with isocyanate exist in the molecule before the curing reaction by heat, and include compounds that change to those having two or more upon irradiation with active energy.
  • a radical addition polymerization reactive component having one or more ethylenically unsaturated groups in the molecule is irradiated with active energy rays.
  • a compound having two or more hydroxyl groups may be used. Specific examples include pentaerythritol triacrylate, 1,4-cyclohexanedimethanol monoacrylate, 4-hydroxybutyl acrylate and the like.
  • the hydroxyl group value of the compound having a hydroxyl group is 100 (mgKOH / g) or more, the strength of the coating film (warping correction layer) is improved because the crosslinking during thermal curing is sufficient.
  • the molar ratio of the compound having an isocyanate group to the isocyanate group is preferably 0.1 to 0.9. If the hydroxyl group / isocyanate group is 0.1 or more, the isocyanate reaction proceeds sufficiently. If the hydroxyl group / isocyanate group is 0.9 or less, the coating film has an appropriate hardness and a sufficient strength can be secured.
  • the curable resin composition constituting the warp correction material of the present invention may contain an inorganic filler component.
  • the inorganic filler component conventionally known ones can be used without limitation, for example, silica, alumina, talc, aluminum hydroxide, calcium carbonate, Neuburg silica, glass powder, clay, magnesium carbonate, natural mica, synthetic mica.
  • Powders of barium sulfate, barium titanate, hydrotalcite, mineral wool, aluminum silicate, calcium silicate, zinc white, titanium oxide, iron oxide, silicon carbide, boron nitride, etc., spheroidized beads, single crystal fibers and A glass fiber etc. 1 type can be used individually or in mixture of 2 or more types.
  • silica, alumina, and titanium oxide are preferable in order to control the relative dielectric constant in the film.
  • the inorganic filler component preferably has an average particle size of 0.01 to 15 ⁇ m, more preferably 0.02 to 12 ⁇ m, particularly preferably 0.03 to 10 ⁇ m.
  • the average particle diameter is the number average particle diameter calculated as an arithmetic average value obtained by measuring the major axis diameter of 20 inorganic fillers randomly selected with an electron microscope.
  • the curable resin composition constituting the warp correction material of the present invention may contain a colorant component.
  • the colorant component By including the colorant component, it is possible to prevent malfunction of the semiconductor device due to infrared rays or the like generated from surrounding devices when the semiconductor chip on which the curable resin composition is disposed is incorporated into the device.
  • the curing agent composition is engraved by means such as laser marking, marks such as letters and symbols are easily recognized. That is, in a semiconductor chip on which a curable resin composition is formed, the product number or the like is usually printed on the surface of the protective film by a laser marking method (a method in which the surface of the protective film is scraped off by laser light and printed).
  • a laser marking method a method in which the surface of the protective film is scraped off by laser light and printed.
  • organic or inorganic pigments and dyes can be used singly or in combination of two or more.
  • black pigments are preferable from the viewpoint of electromagnetic wave and infrared shielding properties.
  • the black pigment include carbon black, perylene black, iron oxide, manganese dioxide, aniline black, activated carbon, and the like, but are not limited thereto.
  • Carbon black is particularly preferable from the viewpoint of preventing malfunction of the semiconductor device.
  • pigments or dyes such as red, blue, green, and yellow can be mixed to obtain black or a black color close thereto.
  • red colorants include monoazo, disazo, azo lake, benzimidazolone, perylene, diketopyrrolopyrrole, condensed azo, anthraquinone, and quinacridone. Specific examples include the following: It is done.
  • blue colorants include phthalocyanine series and anthraquinone series, and pigment series are compounds classified as Pigment, specifically: Pigment Blue 15, Pigment Blue 15: 1, Pigment Blue 15: 2, Pigment Blue 15: 3, Pigment Blue 15: 4. Pigment Blue 15: 6, Pigment Blue 16, Pigment Blue 60, and the like.
  • the dye system include Solvent Blue 35, Solvent Blue 63, Solvent Blue 68, Solvent Blue 70, Solvent Blue 83, Solvent Blue 87, Solvent Blue 94, Solvent Blue 97, Solvent Blue 122, Solvent Blue 70, Solvent Blue 70, and Solvent Blue 70
  • metal-substituted or unsubstituted phthalocyanine compounds can also be used.
  • the green colorant there are similarly phthalocyanine, anthraquinone, perylene, and the like. Specifically, PigmentGreen 7, PigmentGreen 36, SolventGreen 3, SolventGreen 5, SolventGreen 20, SolventGreen 28, and the like can be used. In addition to the above, a metal-substituted or unsubstituted phthalocyanine compound can also be used.
  • the green colorant there are similarly phthalocyanine, anthraquinone, perylene, and the like. Specifically, PigmentGreen 7, PigmentGreen 36, SolventGreen 3, SolventGreen 5, SolventGreen 20, SolventGreen 28, and the like can be used. In addition to the above, a metal-substituted or unsubstituted phthalocyanine compound can also be used.
  • yellow colorants examples include monoazo, disazo, condensed azo, benzimidazolone, isoindolinone, anthraquinone, and the like.
  • colorants such as purple, orange, brown and black may be added for the purpose of adjusting the color tone.
  • the warpage correction layer is also light-transmissive for alignment. It is preferable to have.
  • the colorant component can be selected with appropriate consideration.
  • the curable resin composition constituting the warp correction material of the present invention includes adhesion, adhesion and warpage correction layer to the adherend (pseudo wafer) of the warpage correction layer when the warpage correction layer is provided on FO-WLP.
  • a coupling agent component having a functional group that reacts with an inorganic substance and a functional group that reacts with an organic functional group may be included.
  • a coupling agent component when a coupling agent component is included, when a coating film of the curable resin composition is formed on FO-WLP and the curable resin composition is cured to form a warpage correction layer, the warpage correction layer
  • the water resistance can be improved without impairing the heat resistance.
  • Examples of such coupling agents include titanate coupling agents, aluminate coupling agents, silane coupling agents, and the like. Of these, silane coupling agents are preferred.
  • Examples of organic groups contained in the silane coupling agent include vinyl groups, epoxy groups, styryl groups, methacryloxy groups, acryloxy groups, amino groups, ureido groups, chloropropyl groups, mercapto groups, polysulfide groups, and isocyanate groups. Can be mentioned.
  • Commercially available silane coupling agents can be used, for example, KA-1003, KBM-1003, KBE-1003, KBM-303, KBM-403, KBE-402, KBE-403, KBM-1403.
  • KBM-502, KBM-503, KBE-502, KBE-503, KBM-5103, KBM-602, KBM-603, KBE-603, KBM-903, KBE-903, KBE-9103, KBM-9103, KBM -573, KBM-575, KBM-6123, KBE-585, KBM-703, KBM-802, KBM-803, KBE-846, KBE-9007 (all trade names; manufactured by Shin-Etsu Chemical Co., Ltd.) be able to. These may be used alone or in combination of two or more.
  • additives may be blended in the curable resin composition constituting the warp correction material of the present invention as necessary.
  • Various additives include leveling agents, plasticizers, antioxidants, ion scavengers, gettering agents, chain transfer agents, release agents, rust inhibitors, adhesion promoters, UV absorbers, thermal polymerization inhibitors, thickening agents. You may contain a well-known and usual additive in the field
  • the curable resin composition constituting the warp correction material of the present invention can contain an organic solvent.
  • the organic solvent is used to adjust the viscosity when synthesizing a polyether compound containing an ethylenically unsaturated group in the molecule, mixing each component, and applying the obtained curable resin composition to a substrate or a support film. Can be used for.
  • organic solvent examples include ketones, aromatic hydrocarbons, glycol ethers, glycol ether acetates, esters, alcohols, aliphatic hydrocarbons, petroleum solvents, and the like. More specifically, ketones such as methyl ethyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, cellosolve, methyl cellosolve, butyl cellosolve, carbitol, methyl carbitol, butyl carbitol, propylene glycol monomethyl Glycol ethers such as ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether, ethyl acetate, butyl acetate, dipropylene glycol methyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether a
  • the correction material of the present invention is used as a FO-WLP warpage correction layer.
  • a FO-WLP pseudo wafer provided with a warp correction layer will be described.
  • a semiconductor wafer is prepared and a circuit is formed on one surface.
  • the semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium arsenide (GaAs).
  • GaAs gallium arsenide
  • a circuit can be formed on the wafer surface by various methods including a widely used method such as an etching method and a lift-off method.
  • the semiconductor wafer may be cut into individual semiconductor chips through a dicing process.
  • the semiconductor chip obtained as described above is placed on a plate-like carrier having a smooth surface through an adhesive layer.
  • a carrier A circular or square silicon wafer and a metal plate can be used.
  • the adhesive layer a layer capable of temporarily fixing a semiconductor chip and capable of being peeled off after manufacturing a pseudo wafer is used.
  • an acrylic adhesive, a rubber adhesive, a styrene / conjugated diene block copolymer, or the like can be used.
  • a carboxyl group-containing resin having an ethylenically unsaturated group and a radical polymerization initiator as described above can be contained. By containing such a resin, heating or active energy rays can be contained.
  • the adhesiveness of the adhesive layer can also be changed by irradiation.
  • the semiconductor chips to be mounted may be the same or different in the number of arrangement in the vertical and horizontal directions in plan view, and from various viewpoints such as improving the density and securing the terminal area per unit semiconductor chip, You may arrange
  • the distance between the adjacent semiconductor chips is not particularly limited, but may be arranged so as to obtain a fan-out (FO) region necessary for forming a connection terminal of the finally obtained FO-WLP. desirable.
  • the semiconductor chip placed on the plate-like carrier via the adhesive layer is sealed with a sealing material.
  • the semiconductor chip is placed and the sealing material is applied or bonded onto the carrier so that the side wall surface and the upper surface of the semiconductor chip are sealed with the sealing material.
  • the sealing material is molded so as to be embedded in the space between the semiconductor chips.
  • the sealing step using such a sealing material can be formed by performing compression molding using a known semiconductor sealing resin composition that is liquid, granule, or sheet.
  • a known semiconductor sealing resin compositions epoxy resins, epoxy resin curing agents, curing accelerators, spherical fillers and the like are mainly used.
  • the plate-like carrier After curing the sealing material, the plate-like carrier is peeled off. Peeling is performed between the sealing material and the semiconductor chip and the adhesive layer.
  • peeling method heat treatment is performed to change (decrease) the adhesive strength of the adhesive layer and release, or first peeling is performed between the plate-like carrier and the adhesive layer, and then the adhesive layer is subjected to heat treatment or Examples of the method include a method of releasing after the irradiation treatment with an electron beam or ultraviolet rays.
  • the post-cure may be carried out on the pseudo wafer thus obtained.
  • Post-curing is performed, for example, in a temperature range of 150 to 200 ° C. and in a range of 10 minutes to 8 hours.
  • the pseudo wafer can be thinned by polishing the opposite side of the obtained pseudo wafer where the semiconductor is embedded.
  • the grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like.
  • the thickness of the pseudo wafer after grinding is not particularly limited, but is usually about 50 to 500 ⁇ m.
  • a rewiring layer or a lead frame is formed on the side of the pseudo wafer where the semiconductor chip circuit is exposed.
  • an insulating resin for rewiring is applied to the entire surface of the pseudo wafer where the circuit of the semiconductor chip is exposed by spin coating or the like, and prebaked at about 100 ° C.
  • An insulating resin layer for rewiring is formed.
  • a pattern is formed on the insulating resin layer for rewiring using a photolithography method or the like, and heat treatment (curing) is performed.
  • the heat treatment conditions are, for example, a temperature range of 150 to 250 ° C.
  • the insulating resin for rewiring is not particularly limited, but polyimide resin, polybenzooxide resin, benzocyclobutene resin, and the like are used from the viewpoint of heat resistance and reliability. As described above, when the insulating resin for rewiring is heat-treated, the pseudo wafer may be warped due to heat shrinkage of the insulating resin. On the other hand, in the formation of the lead frame, a thin metal plate is die-cut by an etching technique or a punching process, and is collectively formed by press bending.
  • a power feeding layer is formed on the entire surface of the rewiring layer of the pseudo wafer by a method such as sputtering, and then a resist layer is formed on the power feeding layer, exposed to a predetermined pattern and developed, and then via-plated by electrolytic copper plating. And form a rewiring circuit. After forming the rewiring circuit, the resist layer is peeled off and the power feeding layer is etched.
  • solder resist layer may be formed so as to cover a part of the rewiring circuit and the solder balls.
  • the applied flux can be resin-based or water-based. As the heating and melting method, reflow, hot plate or the like can be used. In this way, a pseudo wafer of FO-WLP is obtained.
  • the FO-WLP is obtained by dividing the FO-WLP pseudo wafer into individual pieces by a method such as dicing.
  • the warp correction material is applied to the same surface as the surface on which the rewiring layer or the like of the pseudo wafer obtained in this way is formed or the opposite surface to form a coating film.
  • the warp correction material can be applied by a printing method such as screen printing, inkjet, dip coating, flow coating, roll coating, bar coater, curtain coating or the like.
  • the viscosity of the warp correction material can be appropriately adjusted as long as the viscosity corresponds to each printing method.
  • the ink jet method is preferable because it allows fine and partial printing and can flexibly cope with the location and size of the warp of the package.
  • the viscosity at 50 ° C. of the warp correction material is preferably 5 to 50 mPa ⁇ s, and more preferably 5 to 20 mPa ⁇ s. Thereby, smooth printing can be performed without applying an unnecessary load to the ink jet printer.
  • the coating amount of the warp correction material is preferably adjusted so that the thickness of the warp correction layer when cured to form the warp correction layer is in the range of 15 to 50 ⁇ m.
  • the thickness of the warp correction layer is 15 ⁇ m or more, it becomes easy to smooth the warp. If it exceeds 50 ⁇ m, the thinness, which is one of the advantages of FOWLP, is not impaired.
  • Irradiation of active energy rays can be carried out after pattern drawing by an ink jet printer, but it is preferable to carry out simultaneously, for example, by irradiating active energy rays from, for example, a side portion or a lower portion in parallel with pattern drawing by an ink jet printer.
  • an LED, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a xenon lamp, a metal halide lamp, or the like is appropriate.
  • electron beams, ⁇ rays, ⁇ rays, ⁇ rays, X rays, neutron rays, and the like can also be used.
  • the irradiation amount of the active energy ray varies depending on the film thickness of the warp correction layer, but can generally be in the range of 10 to 10000 mJ / cm 2 , preferably 20 to 2000 mJ / cm 2 .
  • the application amount of the warp correction material that is, the adjustment of the thickness of the warp correction layer after curing the warp correction material, the irradiation amount of the active energy ray, and further, the selection of the whole surface irradiation and partial irradiation
  • the amount of correction according to the degree of warpage of FO-WLP can be easily adjusted by appropriately adjusting the degree of cure of the warp correction layer of the pseudo wafer.
  • the temperature and time for curing by heat are adjusted, or the temperature of the pseudo wafer is warped by performing a method of raising the temperature in one step to the target temperature or performing step heating that is heated to the final temperature via an intermediate temperature.
  • the amount of correction can be easily adjusted by appropriately adjusting the degree of cure of the correction layer and the warping of FO-WLP.
  • the time for curing by heating is preferably 30 seconds to 3 hours. Preferably, it is 30 minutes to 2 hours.
  • the above-described curing with active energy rays and heat is performed by applying the warp correction material on a JEITA standard silicon wafer and curing it with active energy rays and heat to obtain a flat film-like cured product.
  • the absolute value of the difference between the 60 ° specular reflectance and the 60 ° specular reflectance at the interface between the cured product and the silicon wafer is preferably 10% or less.
  • the inventors cure the warp correction material so as to satisfy the above-described relationship, thereby applying an appropriate warp stress to the warp correction material. It has been found that it can be generated. The reason is not clear, but it is likely that deep curability when curing with active energy rays is involved in curing shrinkage. This is only a guess of the present inventors, and the present invention is not bound to the logic.
  • ⁇ Preparation of pseudo wafer> A 4-inch, 150 ⁇ m thick P-type silicon wafer having a 100 nm SiO 2 film formed on one side made by Canosis Co., Ltd. was diced using a dicing apparatus to obtain a 10 mm ⁇ 10 mm square semiconductor chip.
  • a temporary fixing film was placed on a SUS flat substrate, and the above-mentioned semiconductor chips were placed 5 ⁇ 5 in length and breadth so that the SiO 2 surface was in contact with the temporarily fixing film and the distance between the semiconductor chips was 10 mm vertically and horizontally.
  • a 100 mm ⁇ 100 mm square sheet-shaped semiconductor encapsulant was laminated thereon so that the center positions were approximately the same, and compression-molded at 150 ° C.
  • a kneaded material having the following composition is placed between two 50 ⁇ m cover films (Teijin Purex film), and the kneaded material is formed into a sheet by a flat plate pressing method. What was formed in the sheet form of 200 micrometers in thickness was used.
  • ⁇ Preparation of semiconductor encapsulant composition The following components were blended, heated at 70 ° C. for 4 minutes in a roll kneader, then heated at 120 ° C. for 6 minutes, and melt-kneaded for 10 minutes in total with reduced pressure (0.01 kg / cm 2 ) to prepare a kneaded product.
  • ⁇ Naphthalene type epoxy resin Nippon Kayaku Co., Ltd.
  • NC-7000 30 parts ⁇ Bisphenol type epoxy resin (Mitsubishi Chemical Corporation YX-4000) 10 parts ⁇ Phenol novolac type epoxy resin (The Dow Chemical Company) D.E.N.431) 10 parts, anthraquinone 2 parts, carbon black (Carbon MA-100, manufactured by Mitsubishi Chemical Corporation) 10 parts spherical silica (Admafine SO-E2 manufactured by Admatechs Co., Ltd.) 500 parts ⁇ Silane coupling agent (KBM-403 manufactured by Shin-Etsu Chemical Co., Ltd.) 2 parts ⁇ 2-Phenylimidazole (2PZ manufactured by Shikoku Chemicals Co., Ltd.) 2 parts
  • the temporarily fixed film was peeled off from the obtained laminate, and the back side was polished to obtain a pseudo wafer having a size of 100 mm ⁇ 100 mm square and a thickness of 200 ⁇ m.
  • a positive type rewiring forming resin composition having the following composition was applied by spin coating to the semiconductor circuit surface side of the obtained pseudo wafer, and prebaked by heating at 100 ° C. for 20 minutes.
  • the thickness of the photosensitive rewiring-forming resin layer formed on the pre-baked pseudo wafer was 10 ⁇ m.
  • ⁇ Polyhydroxyamide resin (Z2) 100 parts ⁇ Phenol novolac type epoxy resin (DEN 431 manufactured by The Dow Chemical Company) 10 parts ⁇ 1-Naphthoquinone-2-diazide-5-sulfonic acid ester (Trade name TPPA528, manufactured by AZ Electronic Materials) 10 parts, YXY block copolymer (Nanostrength M52N, manufactured by Arkema) 5 parts, silane coupling agent (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) 2 parts • ⁇ -butyrolactone 30 parts • Propylene glycol monomethyl ether acetate 120 parts
  • HMW680GW metal halide lamp
  • ORC organic halide lamp
  • a photomask in which a circular opening pattern of 100 ⁇ m is continuously formed vertically and horizontally at a pitch of 400 ⁇ m
  • an exposure amount of 500 mJ / cm 2 is positive.
  • the mold pattern was irradiated with light, and developed using a 2.38 wt% TMAH aqueous solution at 25 ° C. for 2 minutes to form a rewiring resin layer in which a round opening pattern was formed.
  • the amount of warpage was a state in which the central portion was recessed by 6 mm with reference to a peripheral portion of 100 mm ⁇ 100 mm square.
  • warp correction materials 1 to 5 were prepared according to the compositions shown in Table 1 below.
  • a coating film is formed by applying each warp correction material obtained above onto a mirror surface of a silicon wafer with JEITA specifications, and ultraviolet rays are irradiated with a high-pressure mercury lamp at an irradiation amount of 600 mJ / cm 2 to perform temporary curing. It was. Next, the temporarily cured film was peeled off, fixed on a Teflon sheet with the irradiated surface facing up, and heated at 150 ° C. for 60 minutes using a BOX-type drying furnace to obtain a flat film-like cured product. The linear expansion coefficient at 50 ° C.
  • thermomechanical analysis TMA / SS6000, manufactured by Seiko Instruments Inc.
  • cured material was measured with the dynamic viscoelasticity measuring apparatus (DMS6100, Seiko Instruments Inc. make).
  • the thickness of the flat film-like cured product was measured with a micro caliper. The measurement results were as shown in Tables 2 and 3 below.
  • the glossiness on the surface side (ultraviolet irradiation side) of the flat film-shaped cured product and the surface side (interface side) that was in contact with the mirror surface of the silicon wafer was measured with a gloss meter ( The 60 ° specular reflectance was measured using Micro Trigloss, manufactured by BYK Gardener. The absolute value of the difference between the two was determined from the measurement results of the specular reflectivity on the surface side and the interface side. The results were as shown in Table 4 below.
  • the warp correction materials 1, 2, 3, and 5 were applied by inkjet printing using a piezo-type inkjet printer, respectively, to form a coating film.
  • the ink jet head was irradiated with ultraviolet rays at an irradiation amount of 600 mJ / cm 2 with an incidental high-pressure mercury lamp, and the coating film was temporarily cured.
  • a coating film is formed on the convex surface of the prepared pseudo wafer by screen printing using the warp correction material 4, and the coating film is dried at 80 ° C. for 30 minutes in a BOX-type drying furnace.
  • the warp correction material 2 was applied to the convex surface of the prepared pseudo wafer by ink jet printing using a piezo ink jet printer to form a coating film. At this time, ultraviolet irradiation was not performed. Thereafter, the coating film was heated at 150 ° C. for 60 minutes in a BOX type drying furnace (curing method B).
  • the amount of warpage was measured for a pseudo wafer in which the warp correction material was cured by the curing method as described above to form a warp correction layer.
  • the amount of warpage was measured at 25 ° C. using a long caliper.
  • the warp of the central part is ⁇ 2 mm or less with reference to two points on the peripheral part of the pseudo wafer, it was judged as good ( ⁇ ).
  • ⁇ 2 to 3 mm was judged as ⁇ , and when it exceeded ⁇ 3 mm, it was judged as defective ( ⁇ ).
  • the evaluation results are as shown in Tables 2 and 3.
  • Example 1 and Example 2 the warpage of Example 1 and Example 2 in which the linear expansion coefficient ( ⁇ ) ⁇ elastic modulus ( ⁇ ) ⁇ film thickness ( ⁇ ) is 2000 or more is good, while In Example 1 and Comparative Example 2, since the linear expansion coefficient ( ⁇ ) ⁇ elastic modulus ( ⁇ ) ⁇ film thickness ( ⁇ ) was less than 2000, the warp correction was not good. Moreover, while the curvature of Example 6 and Example 7 whose linear expansion coefficient ( ⁇ ) ⁇ elastic modulus ( ⁇ ) ⁇ film thickness ( ⁇ ) is 10,000 or less is good, Comparative Examples 3 and 4 and Comparative Example In No. 6, since the linear expansion coefficient ( ⁇ ) ⁇ elastic modulus ( ⁇ ) ⁇ film thickness ( ⁇ ) exceeds 10,000, the warpage of the warp correction material is poor.
  • Example 1 and Comparative Example 1 when Example 1 and Comparative Example 1 are compared, the linear expansion coefficient ( ⁇ ) and the elastic modulus ( ⁇ ) are constant, but the film thickness ( ⁇ ) is different. In this case, if the linear expansion coefficient ( ⁇ ) ⁇ elastic modulus ( ⁇ ) ⁇ film thickness ( ⁇ ) is 2000 or more, the warpage of the warp correction material is good, and if it is less than 2000, the warpage of the warpage correction material is poor. On the other hand, when Example 2 and Comparative Example 1 are compared, the linear expansion coefficient ( ⁇ ) and the film thickness ( ⁇ ) are constant, but the elastic modulus ( ⁇ ) is different.
  • the absolute value of the difference in reflectance is 10% or less, and it is estimated that the curing of the surface and the interface proceeds well.
  • the absolute value of the reflectance difference of the cured product using the warp correction material 5 is more than 10%
  • the hydroxyl group-containing compound contained in the warp correction material 5 has two or more hydroxyl groups, and the hydroxyl value is Since the compound is 100 (mgKOH / g) or more
  • the warpage measurement evaluation (Example 7) of the pseudo wafer using the warp correction material 5 is performed when the warp correction materials 1 to 4 are used (Examples 1 to 6). ) Is presumed to have the same effect.

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Abstract

Le problème décrit par la présente invention est de fournir un matériau de correction de gauchissement qui peut ajuster la quantité de gauchissement même à la température à laquelle un boîtier de niveau de tranche de type sortance (FO-WLP) est monté, et à la température ambiante à laquelle, par exemple, un transport de tranche est effectué, et de ce fait réduit le gauchissement du WLP. La solution selon l'invention porte sur un matériau de correction de gauchissement pour un boîtier de niveau de tranche de type sortance qui est caractérisé en ce qu'il comprend une composition de résine durcissable comprenant un composant qui est durcissable au moyen d'un rayonnement d'énergie active et de la chaleur, dans laquelle lorsque le matériau de correction de gauchissement est formé en un produit durci en forme de film plat par durcissement du matériau de correction de gauchissement au moyen du rayonnement d'énergie active et de la chaleur, et du coefficient de dilatation linéaire α (ppm/°C) à 25 °C, le module élastique β (GPa) à 25 °C, et l'épaisseur γ (μm) du produit durci satisfont l'expression relationnelle suivante : 2000 ≤ α×β×γ ≤ 10000.
PCT/JP2018/013176 2017-03-29 2018-03-29 Matériau de correction de gauchissement et procédé de fabrication de boîtier de niveau de tranche de type sortance WO2018181686A1 (fr)

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CN201880020184.4A CN110447097B (zh) 2017-03-29 2018-03-29 翘曲矫正材料和扇出型晶片级封装的制造方法

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CN116606528A (zh) * 2023-07-18 2023-08-18 成都上泰科技有限公司 一种用于宽禁带半导体封装的增韧改性环氧树脂高聚物及其制备方法

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US12394618B2 (en) 2021-07-08 2025-08-19 Tokyo Electron Limited Method of adjusting wafer shape using multi-directional actuation films

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