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WO2018185907A1 - Dispositif laser à semi-conducteur, peeling dispositif, et procédé de fabrication d'un dispositif d'affichage souple - Google Patents

Dispositif laser à semi-conducteur, peeling dispositif, et procédé de fabrication d'un dispositif d'affichage souple Download PDF

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Publication number
WO2018185907A1
WO2018185907A1 PCT/JP2017/014357 JP2017014357W WO2018185907A1 WO 2018185907 A1 WO2018185907 A1 WO 2018185907A1 JP 2017014357 W JP2017014357 W JP 2017014357W WO 2018185907 A1 WO2018185907 A1 WO 2018185907A1
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solid
state laser
laser
lens
lenses
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PCT/JP2017/014357
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English (en)
Japanese (ja)
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菅　勝行
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シャープ株式会社
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Priority to PCT/JP2017/014357 priority Critical patent/WO2018185907A1/fr
Publication of WO2018185907A1 publication Critical patent/WO2018185907A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Definitions

  • the present invention relates to a solid-state laser device, a peeling device using a solid-state laser, and a method for manufacturing a flexible display device (flexible display device) using the solid-state laser device.
  • an organic EL display device equipped with an organic EL (Electroluminescence) display element can realize low power consumption, thinning, and high image quality. Has attracted a lot of attention as an excellent display.
  • a display device that does not need to have a backlight such as an organic EL display device or a display device having a reflective liquid crystal display element, can be bent freely. There is a high demand for conversion.
  • FIG. 6 is a diagram for explaining a Lazer Lift Off process (also referred to as an LLO process) necessary for manufacturing a highly reliable flexible organic EL display device.
  • LLO process Lazer Lift Off process
  • a PI layer 102 (resin layer) made of, for example, polyimide resin is laminated on one surface 101a of the glass substrate 101 (non-flexible substrate).
  • a moisture-proof layer 103 is laminated on the PI layer 102
  • a TFT array layer 104 including a thin film transistor element (TFT element) and an insulating film is formed on the moisture-proof layer 103
  • the TFT array layer 104 is formed on the TFT array layer 104.
  • a first electrode (not shown) was formed in a pattern corresponding to each pixel using a metal film of the same layer, and a terminal portion (not shown) was formed.
  • any one of the red light emitting organic EL element 105R, the green light emitting organic EL element 105G, and the blue light emitting organic EL element 105B is formed (second step), and the red light emitting organic EL element is formed.
  • a sealing film 106 is formed so as to cover 105R, the green light-emitting organic EL element 105G, and the blue light-emitting organic EL element 105B.
  • each of the red light emitting organic EL element 105R, the green light emitting organic EL element 105G, and the blue light emitting organic EL element 105B is not illustrated, for example, a hole injection layer, a hole transport layer, a light emitting layer of each color, an electron It is a laminated body of a transport layer, an electron injection layer, and a second electrode.
  • a laser beam is irradiated from the glass substrate 101 side to cause ablation at the interface between the PI layer 102 and the glass substrate 101. It peeled from 102 (3rd process).
  • the back film 111 is PI bonded via an adhesive layer (not shown) provided on one surface 111 a of the back film 111 which is a flexible substrate. Affixed to the layer 102 to complete the flexible organic EL display device (fourth step).
  • a manufacturing process of a thin film transistor element (TFT element), a red light emitting organic EL element 105R, and a green light emitting process which are relatively high temperature manufacturing processes. Since the manufacturing process of the organic EL element 105G and the blue light-emitting organic EL element 105B can be performed on the glass substrate 101, a highly reliable flexible organic EL display device can be realized.
  • TFT element thin film transistor element
  • red light emitting organic EL element 105R red light emitting organic EL element 105R
  • a green light emitting process which are relatively high temperature manufacturing processes. Since the manufacturing process of the organic EL element 105G and the blue light-emitting organic EL element 105B can be performed on the glass substrate 101, a highly reliable flexible organic EL display device can be realized.
  • Japanese Patent Publication Japanese Patent Laid-Open No. 2015-194642 (published on November 5, 2015)
  • an excimer laser having a typical oscillation wavelength of XeCl: 308 nm and XeF: 351 nm is generated by using a mixed gas such as a rare gas or halogen.
  • a mixed gas such as a rare gas or halogen.
  • excimer Laser has been used, but excimer lasers have problems in terms of increase in maintenance cost and operating rate because gas exchange and chamber cleaning work are required periodically.
  • a solid laser such as a YAG laser (Nd: YAG laser) containing Nd 3+ ions has no concern about gas deterioration, and therefore, more uniform laser light irradiation can be performed without maintenance. Solid lasers are drawing attention.
  • each of laser beams from two different laser oscillation units is passed through each of two different optical systems (for example, an optical system including a cylindrical lens, a homogenizer, and a condenser lens).
  • an optical system including a cylindrical lens, a homogenizer, and a condenser lens.
  • Patent Document 1 in the case of a laser apparatus having a different optical system for each laser oscillation unit, it is necessary to provide as many optical systems as the number of laser oscillation units. But it is also disadvantageous in terms of cost. In particular, when a solid-state laser having a small output is used, it is necessary to increase the number of laser oscillation units used, which is further disadvantageous in terms of the size and cost of the laser device.
  • FIG. 7 shows a schematic configuration of a solid-state laser device 120 that irradiates the PI layer 102 on the glass substrate 101 with each of the laser beams from the plurality of solid-state laser oscillation units S1, S2, S3, and S4 superimposed on the same optical path.
  • FIG. 7 shows a schematic configuration of a solid-state laser device 120 that irradiates the PI layer 102 on the glass substrate 101 with each of the laser beams from the plurality of solid-state laser oscillation units S1, S2, S3, and S4 superimposed on the same optical path.
  • the solid-state laser device 120 includes four solid-state laser oscillation units S1, S2, S3, and S4 that individually emit laser beams, and thin-film polarizers D1, D2, D3, and D4, Polarization rotating elements (for example, ⁇ / 2 plates) f1, f2, and f3, beam expanders L1 and L2, a homogenizer H, a reflection mirror D5, and a condenser lens L3 are provided.
  • solid-state laser oscillation units S1, S2, S3, and S4 that individually emit laser beams
  • thin-film polarizers D1, D2, D3, and D4 Polarization rotating elements (for example, ⁇ / 2 plates) f1, f2, and f3, beam expanders L1 and L2, a homogenizer H, a reflection mirror D5, and a condenser lens L3 are provided.
  • Thin film polarizers D1, D2, D3, and D4 are polarizers that reflect incident P-polarized light and transmit incident S-polarized light.
  • the polarization rotation elements f1, f2, and f3 emit the incident S-polarized light as it is, and the incident P-polarized light is converted into the S-polarized light and emitted.
  • the laser light emitted from the solid-state laser oscillating unit S1 is reflected by the thin film polarizer D1, and the laser light including only the P-polarized light passes through the polarization rotating element f1 to become a laser light including only the S-polarized light.
  • the laser light emitted from the solid-state laser oscillating unit S2 is reflected by the thin film polarizer D2, and the laser light including only the P-polarized light passes through the polarization rotating element f2 to become laser light including only the S-polarized light. After passing through the thin film polarizers D3 and D4 and one polarization rotation element f3, they are guided to the beam expanders L1 and L2.
  • the laser beam emitted from the solid-state laser oscillating unit S3 is reflected by the thin film polarizer D3, and the laser beam including only the P-polarized light passes through the polarization rotating element f3 to become a laser beam including only the S-polarized light.
  • the light After passing through the thin film polarizer D4, the light is guided to the beam expanders L1 and L2.
  • the laser light emitted from the solid-state laser oscillating unit S4 is reflected by the thin film polarizer D4, and the laser light including only P-polarized light is guided to the beam expanders L1 and L2.
  • the beam expanders L1 and L2 are lenses for expanding the incident laser light in a line shape in the major axis direction
  • the homogenizer H is a lens for improving the uniformity of the incident laser light
  • the reflecting mirror D5 Is a mirror that guides the incident laser light to the condensing lens L3.
  • the condensing lens L3 irradiates the PI layer 102 on the glass substrate 101 with the incident laser light as laser light having a predetermined shape. It is a lens.
  • each of the laser beams from the plurality of solid-state laser oscillation units S1, S2, S3, and S4 passes through the same optical path and then the PI layer on the glass substrate 101.
  • Thin film polarizers D1, D2, D3, and D4, beam expanders L1 and L2, a homogenizer H, a reflection mirror D5, and a condensing lens L3 are disposed so as to be able to irradiate 102.
  • each of the laser beams from the plurality of solid-state laser oscillation units S1, S2, S3, and S4 is superimposed on the same optical path and is incident on the beam expanders L1 and L2 as one beam.
  • thin film polarizers D1, D2, D3, and D4 are arranged.
  • the minor axis direction is focused on a Gaussian beam of 20 to 30 ⁇ m, so the homogenizer does not act on the minor axis direction. Apply the homogenizer only in the direction.
  • FIG. 8A is a diagram for explaining an LLO process using an excimer laser
  • FIG. 8B is a diagram for explaining an LLO process using the solid-state laser device 120 shown in FIG. FIG.
  • the output of the excimer laser is large, so the width in the short axis direction of the laser beam, which is the width in the horizontal direction in the figure.
  • the irradiation region R1 of the laser beam can be secured relatively wide, and the top flat can be made by using a homogenizer in the minor axis direction. Even if it exists, the influence by dust and scratches is not great, and the lower limit value of the irradiation energy necessary for peeling the PI layer 102 on the glass substrate 101 can be easily secured.
  • the output of the solid-state laser is small. Since the width in the minor axis direction of a certain laser beam can be ensured only up to about 30 ⁇ m and the irradiation region R1 of the laser beam cannot be secured widely, the following problems arise.
  • FIG. 9 is a diagram for explaining problems in the LLO process using the solid-state laser device 120 illustrated in FIG.
  • the width of the laser beam emitted from the condensing lens L3 of the solid-state laser device 120 is as narrow as about 30 ⁇ m (see FIG. 8B). Since a homogenizer is not used in the minor axis direction, the beam is simply a Gaussian beam obtained by condensing the beam with a lens.
  • the present invention has been made in view of the above-described problems, and even when a solid-state laser having a small width in the minor axis direction of a laser beam is used, the size of the device is increased and the cost of the device is increased. In addition, it is possible to secure a wide margin for dust and scratches on the non-flexible substrate and to improve the yield in the Lazer Lift Off process (LLO process), a peeling apparatus, and flexibility It is an object of the present invention to provide a method for manufacturing a flexible display device that can improve the yield of the display device.
  • LLO process Lazer Lift Off process
  • a solid-state laser device of the present invention is a solid-state laser device including a plurality of solid-state laser oscillation units and a plurality of lenses, and includes a plurality of solid-state laser oscillation units.
  • Each of the emitted laser lights is incident on the first lens in the plurality of lenses through a plurality of different optical paths, and the laser light emitted from the first lens is the first in the plurality of lenses. It is characterized by being incident on the irradiation object from a plurality of directions through two lenses.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units is incident on the first lens through a plurality of different optical paths, the width of the laser beam in the minor axis direction Even when a small solid laser is used, it is possible to suppress an increase in the size of the device and an increase in the cost of the device.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units is emitted from the first lens by being incident on the first lens through a plurality of different optical paths. Since the emitted laser light is incident on the irradiation object from a plurality of directions via the second lens among the plurality of lenses, a wide margin for dust and scratches on the non-flexible substrate is ensured. Thus, a solid-state laser device capable of improving the yield in the Lazer ⁇ ⁇ ⁇ ⁇ Lift Off process (LLO process) can be realized.
  • LLO process Lazer ⁇ ⁇ ⁇ ⁇ Lift Off process
  • the peeling device of the present invention is a peeling device including a plurality of solid laser oscillation units and a plurality of lenses, and is emitted from the plurality of solid laser oscillation units.
  • Each of the laser beams is incident on the first lens in the plurality of lenses through a plurality of different optical paths, and the laser beam emitted from the first lens is the second lens in the plurality of lenses.
  • the resin layer formed on one surface of the non-flexible substrate, and the display element formed on the resin layer in a plurality of directions The inflexible substrate is peeled off from the resin layer.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units is emitted from the first lens by being incident on the first lens through a plurality of different optical paths.
  • Laser light passes through the second lens among the plurality of lenses, Incoming from a plurality of directions into the inflexible substrate in the inflexible substrate, the resin layer formed on one surface of the inflexible substrate, and the display element formed on the resin layer. Therefore, a wide margin for dust and scratches on the non-flexible substrate can be ensured, and a peeling apparatus that can improve the yield in the Laser Lift Off process (LLO process) can be realized.
  • LLO process Laser Lift Off process
  • a method for manufacturing a flexible display device of the present invention includes a first step of forming a resin layer on one surface of a non-flexible substrate, and a display element on the resin layer.
  • the method of manufacturing a flexible display device includes a plurality of solid-state laser oscillation units and a plurality of solid-state laser oscillation units in the third step.
  • Each of the laser beams emitted from the plurality of solid-state laser oscillation units is incident on a first lens among the plurality of lenses through a plurality of different optical paths, and from the first lens.
  • the emitted laser beam is used as the second lens in the plurality of lenses. Through, it is characterized in that is incident from a plurality of directions to the non-flexible substrate.
  • a flexible display device manufacturing method can be realized.
  • the present invention even when a solid-state laser having a small width in the minor axis direction of a laser beam is used, an increase in the size of the device and an increase in the cost of the device can be suppressed, and non-flexibility can be achieved.
  • the margin for dust and scratches on the conductive substrate can be secured widely, and the yield of the solid laser device, peeling device, and flexible display device that can improve the yield in the Lazer Lift Off process (LLO process) can be improved.
  • a flexible display device manufacturing method can be provided.
  • FIG. It is a figure which shows schematic structure of the solid-state laser apparatus of Embodiment 1.
  • FIG. It is a figure for demonstrating the reason which can improve the yield in a LLO process when the solid-state laser apparatus shown in FIG. 1 is used.
  • 6 is a diagram for explaining a method for driving a solid-state laser oscillation unit provided in the solid-state laser device of Embodiment 2.
  • FIG. It is a figure for demonstrating the schematic structure of the solid-state laser apparatus of Embodiment 3, and its drive method.
  • FIGS. 1 to 5 Embodiments of the present invention will be described with reference to FIGS. 1 to 5 as follows.
  • components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.
  • Embodiment 1 A first embodiment of the present invention will be described with reference to FIGS.
  • FIG. 1 shows that laser beams from a plurality of solid-state laser oscillators S1, S2, S3, and S4 are incident on one condenser lens L3 through a plurality of different optical paths without overlapping each other.
  • the laser beam emitted from the condenser lens L3 is incident on the glass substrate 101 (irradiation target) from a plurality of directions, so that the PI layer 102 on the glass substrate 101 is irradiated with the laser beam.
  • the solid-state laser device 1 is a peeling device using a solid-state laser.
  • the plurality of solid-state laser oscillation units S1, S2, S3, and S4 are portions that emit solid-state laser light such as a YAG laser (Nd: YAG laser) including Nd 3+ ions.
  • the solid-state laser device 1 includes four solid-state laser oscillation units S1, S2, S3, and S4 that individually emit laser beams, thin film polarizers D1, D2, D3, and D4, Polarization rotating elements (for example, ⁇ / 2 plates) f1, f2, and f3, beam expanders L1 and L2, a homogenizer H, a reflection mirror D5, and a condenser lens L3 are provided.
  • solid-state laser oscillation units S1, S2, S3, and S4 that individually emit laser beams
  • thin film polarizers D1, D2, D3, and D4 Polarization rotating elements (for example, ⁇ / 2 plates) f1, f2, and f3, beam expanders L1 and L2, a homogenizer H, a reflection mirror D5, and a condenser lens L3 are provided.
  • Thin film polarizers D1, D2, D3, and D4 are polarizers that reflect incident P-polarized light and transmit incident S-polarized light.
  • the polarization rotation elements f1, f2, and f3 emit the incident S-polarized light as it is, and the incident P-polarized light is converted into the S-polarized light and emitted.
  • the laser light emitted from the solid-state laser oscillating unit S1 is reflected by the thin film polarizer D1, and the laser light including only the P-polarized light passes through the polarization rotating element f1 to become a laser light including only the S-polarized light.
  • the laser light emitted from the solid-state laser oscillating unit S2 is reflected by the thin film polarizer D2, and the laser light including only the P-polarized light passes through the polarization rotating element f2 to become laser light including only the S-polarized light.
  • the light After passing through the thin film polarizers D3 and D4 and one polarization rotation element f3, the light is guided to the beam expander L1.
  • the laser beam emitted from the solid-state laser oscillating unit S3 is reflected by the thin film polarizer D3, and the laser beam including only the P-polarized light passes through the polarization rotating element f3 to become a laser beam including only the S-polarized light. After passing through the thin film polarizer D4, it is guided to the beam expander L1.
  • the laser light emitted from the solid-state laser oscillation unit S4 is reflected by the thin film polarizer D4, and the laser light including only P-polarized light is guided to the beam expander L1.
  • the beam expanders L1 and L2 are lenses for expanding the incident laser light in a line shape in the major axis direction
  • the homogenizer H is a lens for improving the uniformity of the incident laser light
  • the reflecting mirror D5 Is a mirror that guides the incident laser light to the condensing lens L3.
  • the condensing lens L3 irradiates the PI layer 102 on the glass substrate 101 with the incident laser light as laser light having a predetermined shape. It is a lens.
  • laser beams from a plurality of solid-state laser oscillation units S 1, S 2, S 3, S 4 are not overlapped on one optical path, and a plurality of different optical paths ( In the present embodiment, the light beams are incident on one beam expander L1 and L2 through four different optical paths.
  • a plurality of solid-state laser oscillation units S1, S2, S3, and S4 and thin film polarizers D1, D2, D3, and D4 are arranged as follows.
  • the laser light emitted from the solid-state laser oscillation unit S1 and reflected by the thin film polarizer D1 is then passed through the thin film polarizers D2, D3, and D4 and the three polarization rotation elements f1, f2, and f3.
  • the thin film polarizers D3 and D4 and the two polarization rotation elements f2 and f2 Solid laser oscillation units S1 and S2 and thin film polarizers D1 and D2 are arranged so that the optical paths of the second optical path passing through f3 do not overlap.
  • the solid-state laser oscillation part S3 and the thin film polarizer D3 are arranged so that the optical paths of the third optical path passing through and do not overlap with each other.
  • the laser light of the first optical path, the laser light of the second optical path, the laser light of the third optical path, and the laser light of the fourth optical path emitted from the solid-state laser oscillation unit S4 and reflected by the thin film polarizer D4.
  • the solid-state laser oscillation part S4 and the thin film polarizer D4 are arranged so that their optical paths do not overlap.
  • the plurality of optical paths different from each other means optical paths that do not overlap each other spatially between the solid-state laser oscillation units S1, S2, S3, and S4 and the beam expander L1 (first lens).
  • the beam expander L1 is also referred to as a first lens, and the condenser lens L3 is also referred to as a second lens.
  • the laser light incident on the beam expanders L1 and L2 through a plurality of different optical paths is incident on the condenser lens L3 via the homogenizer H and the reflection mirror D5.
  • the laser light emitted from the condenser lens L3 is incident on the glass substrate 101 from a plurality of directions, so that the PI layer 102 on the glass substrate 101 can be irradiated with the laser light.
  • the laser beams emitted from the solid laser oscillation units S1, S2, S3, and S4 are emitted at the same time, but are not limited thereto.
  • FIG. 2 is a diagram for explaining the reason why the yield in the LLO process can be improved when the solid-state laser device 1 shown in FIG. 1 is used.
  • the laser light emitted from the condensing lens L ⁇ b> 3 of the solid-state laser device 1 is incident on the glass substrate 101 from a plurality of directions, so that it is on the glass substrate 101.
  • the PI layer 102 can be irradiated with laser light.
  • a flexible display device manufacturing method that can improve the yield of the flexible display device can be realized.
  • Embodiment 2 of the present invention will be described based on FIGS. 3 and 4.
  • laser light does not start to be emitted simultaneously from each of the plurality of solid laser oscillation units S1 ′, S2 ′, S3 ′, and S4 ′, but the laser light is emitted from the solid laser oscillation unit S1 ′
  • the solid laser oscillator S2 ′, the solid laser oscillator S3 ′, and the solid laser oscillator S4 ′ start to be emitted in this order, and the solid laser oscillator S1 ′, the solid laser oscillator S2 ′, the solid laser oscillator S3 ′, and the solid laser oscillator.
  • FIG. 3 is a diagram for explaining the emission order of the laser beams in the solid laser oscillation units S1 ′, S2 ′, S3 ′, and S4 ′ provided in the solid state laser device 10.
  • FIG. 4 is a diagram for explaining the order of stopping the emission of laser light in the solid-state laser oscillation units S1 ', S2', S3 ', and S4' provided in the solid-state laser device 10.
  • the laser beam is a solid-state laser oscillation unit.
  • S1 ′, solid laser oscillating unit S2 ′, solid laser oscillating unit S3 ′, and solid laser oscillating unit S4 ′ are emitted in this order at regular intervals.
  • the laser beam is a solid-state laser.
  • the emission is stopped at regular intervals in the order of the oscillator S1 ′, the solid laser oscillator S2 ′, the solid laser oscillator S3 ′, and the solid laser oscillator S4 ′.
  • the solid laser oscillation units S1 ′, S2 ′, S3 ′, and S4 ′ when stopping the emission of the laser light from the solid laser oscillation units S1 ′, S2 ′, S3 ′, and S4 ′, the solid laser oscillation units S1 ′, S2 ′, S3 ′, and S4 ′ are stopped.
  • the solid-state laser oscillators S1 ′, S2 ′, S3 ′, and S4 ′ are used by using a shutter unit (not shown) that is an open / close unit that can block or pass the emitted laser light.
  • the emission of laser light from is stopped, the present invention is not limited to this.
  • the solid-state laser oscillation unit S 1 Interference of laser light emitted from “• S2”, S3 ′, and S4 ′ can be suppressed.
  • the effective pulse width (irradiation time) can be changed by shifting the irradiation time of the laser light, the margin of the LLO process can be adjusted and the yield can be improved.
  • the laser light is started to be emitted at regular intervals, and is constant. Although the emission is stopped at intervals, laser light may be emitted from the solid laser oscillation units S1 ′, S2 ′, S3 ′, and S4 ′ in different periods.
  • Embodiment 3 of the present invention will be described with reference to FIG.
  • This embodiment is different from the first and second embodiments in that the outputs of the solid laser oscillation units S1 ′′, S2 ′′, S3 ′′, and S4 ′′ provided in the solid state laser device 20 are different. Others are as described in the first and second embodiments.
  • members having the same functions as those shown in the drawings of Embodiments 1 and 2 are given the same reference numerals, and descriptions thereof are omitted.
  • FIG. 5 is a diagram showing a schematic configuration of the solid-state laser device 20.
  • the outputs of the solid laser oscillation units S1 ′′, S2 ′′, S3 ′′, and S4 ′′ included in the solid state laser device 20 are output from the solid laser oscillation unit S1 ′′.
  • the solid laser oscillation unit S2 ′′, the solid laser oscillation unit S3 ′′, and the solid laser oscillation unit S4 ′′ become smaller in this order.
  • the output of the solid-state laser oscillation unit S1 ′′ is set larger than that of the solid-state laser oscillation units S2 ′′, S3 ′′, S4 ′′.
  • the output of the solid laser oscillator S2 ′′ is set to be weaker than the output of the solid laser oscillator S1 ′′ and larger than the outputs of the solid laser oscillators S3 ′′ and S4 ′′.
  • the output of the oscillating unit S3 ′′ is set to be weaker than the outputs of the solid laser oscillating units S1 ′′ and S2 ′′ and larger than the output of the solid laser oscillating unit S4 ′′.
  • the output of the solid-state laser oscillation unit S4 ′′ is output from the solid-state laser oscillation unit S1 ′′, S2 ′′. It was set weaker than the output of S3 ′′.
  • the solid-state laser device 20 it is possible to flexibly change the pulse shape of the laser applied to the resin layer, so that it is possible to adjust the margin of the LLO process and improve the yield.
  • the flexible display device (flexible display device) according to the present embodiment is not particularly limited as long as it is a display panel having a flexible and bendable optical element.
  • the optical element includes an optical element whose luminance and transmittance are controlled by current and an optical element whose luminance and transmittance are controlled by voltage.
  • an optical element for current control an organic EL (Electro Luminescence) display provided with an OLED (Organic Light Emitting Diode), or an EL display QLED such as an inorganic EL display provided with an inorganic light emitting diode (Quantum)
  • QLED displays equipped with dot-light-emitting diodes There are QLED displays equipped with dot-light-emitting diodes.
  • the voltage control optical element include a liquid crystal display element.
  • a solid-state laser device is a solid-state laser device including a plurality of solid-state laser oscillation units and a plurality of lenses, and laser light emitted from the plurality of solid-state laser oscillation units. Are incident on the first lens of the plurality of lenses through a plurality of different optical paths, and the laser light emitted from the first lens passes through the second lens of the plurality of lenses. It is characterized by being incident on the irradiation object from a plurality of directions.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units is incident on the first lens through a plurality of different optical paths, the width of the laser beam in the minor axis direction Even when a small solid laser is used, it is possible to suppress an increase in the size of the device and an increase in the cost of the device.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units is emitted from the first lens by being incident on the first lens through a plurality of different optical paths. Since the emitted laser light is incident on the irradiation object from a plurality of directions via the second lens among the plurality of lenses, a wide margin for dust and scratches on the non-flexible substrate is ensured. Thus, a solid-state laser device capable of improving the yield in the Lazer ⁇ ⁇ ⁇ ⁇ Lift Off process (LLO process) can be realized.
  • LLO process Lazer ⁇ ⁇ ⁇ ⁇ Lift Off process
  • the first lens is a beam expander and the second lens is a condenser lens.
  • a solid-state laser device that emits line-shaped laser light can be realized.
  • a solid-state laser device is one of the plurality of lenses according to aspect 1 or 2 described above, and a third lens is provided between the first lens and the second lens. It is preferable that a homogenizer is provided.
  • the solid-state laser device is the solid-state laser device according to any one of the aspects 1 to 3, wherein the plurality of different optical paths includes at least a first optical path and a second optical path. Two thin film polarizers and a polarization rotation element are provided, and one thin film polarizer of the two thin film polarizers may be provided in the second optical path.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units may be emitted simultaneously.
  • a solid-state laser device capable of irradiating a large energy density can be realized.
  • the solid-state laser device according to Aspect 6 of the present invention is the solid-state laser device according to any one of Aspects 1 to 4, wherein each of the laser beams emitted from the plurality of solid-state laser oscillation units starts and ends emission at different timings. At the same time, the end order of the emission of the laser light may be the start order of the emission of the laser light.
  • a solid-state laser device capable of arbitrarily controlling the pulse width of the laser can be realized.
  • the laser beams emitted from the plurality of solid-state laser oscillation units may have different emission periods.
  • a solid-state laser device capable of arbitrarily controlling the pulse width of the laser can be realized.
  • the solid-state laser device according to aspect 8 of the present invention is the solid-state laser device according to aspect 4, in which the output of the first solid-state laser oscillation unit that emits laser light to the first optical path is the second solid-state laser oscillation unit. It is preferable that the output is larger than the output of the second solid-state laser oscillating unit that emits laser light to the optical path.
  • a solid-state laser device capable of arbitrarily controlling the pulse shape of the laser light can be realized.
  • a peeling apparatus is a peeling apparatus including a plurality of solid laser oscillation units and a plurality of lenses, each of the laser beams emitted from the plurality of solid laser oscillation units. Is incident on the first lens in the plurality of lenses through a plurality of different optical paths, and the laser light emitted from the first lens is non-transmitted via the second lens in the plurality of lenses.
  • the flexible substrate, the resin layer formed on one surface of the non-flexible substrate, and the display element formed on the resin layer are incident on the non-flexible substrate from a plurality of directions, and A peeling apparatus for peeling the non-flexible substrate from a resin layer.
  • each of the laser beams emitted from the plurality of solid-state laser oscillation units is emitted from the first lens by being incident on the first lens through a plurality of different optical paths.
  • Laser light passes through the second lens among the plurality of lenses, Incoming from a plurality of directions into the inflexible substrate in the inflexible substrate, the resin layer formed on one surface of the inflexible substrate, and the display element formed on the resin layer. Therefore, a wide margin for dust and scratches on the non-flexible substrate can be ensured, and a peeling apparatus that can improve the yield in the Laser Lift Off process (LLO process) can be realized.
  • LLO process Laser Lift Off process
  • a method for manufacturing a flexible display device includes a first step of forming a resin layer on one surface of a non-flexible substrate, and a second step of forming a display element on the resin layer.
  • a fourth step of attaching a flexible substrate to the flexible display device wherein the third step includes a plurality of solid-state laser oscillation units and a plurality of lenses.
  • Each of the laser beams emitted from the plurality of solid-state laser oscillation units is incident on the first lens among the plurality of lenses through a plurality of different optical paths, and is emitted from the first lens. Through the second lens of the plurality of lenses. It is characterized in that the non-flexible substrate is made incident from a plurality of directions.
  • a flexible display device manufacturing method can be realized.
  • the resin layer may be a polyimide resin.
  • the display element according to the tenth or eleventh aspect may be a reflective liquid crystal display element.
  • the yield of the flexible reflective liquid crystal display device can be improved.
  • the display element may be an organic EL display element.
  • the yield of the flexible organic EL display device can be improved.
  • the present invention can be used for a laser device and a method for manufacturing a flexible display device using the laser device.
  • Solid-state laser device 10 Solid laser device (peeling device) 20 Solid laser device (peeling device) S1 to S4 Solid laser oscillator S1 ′ to S4 ′ Solid laser oscillator S1 ′′ to S4 ′′ Solid laser oscillators f1, f2 and f3 Polarization rotating elements D1 to D4 Thin film polarizer L1 Beam expander (first lens) L2 Beam expander H Homogenizer L3 Condensing lens (second lens) D5 Reflective mirror 101 Glass substrate 102 PI layer (Polyimide resin)

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Selon la présente invention, des faisceaux laser émis à partir d'une pluralité de oscillateurs laser (S1, S2, S3, S4) à semi-conducteur sont incidents respectivement sur un expanseur (L1) de faisceau suivant une pluralité de trajets différents, et les faisceaux laser émis à partir de l'expanseur (L1) de faisceau sont incidents sur un substrat (101) en verre, qui est un objet à éclairer, à partir de directions multiples via une lentille (L3) de condensation.
PCT/JP2017/014357 2017-04-06 2017-04-06 Dispositif laser à semi-conducteur, peeling dispositif, et procédé de fabrication d'un dispositif d'affichage souple WO2018185907A1 (fr)

Priority Applications (1)

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PCT/JP2017/014357 WO2018185907A1 (fr) 2017-04-06 2017-04-06 Dispositif laser à semi-conducteur, peeling dispositif, et procédé de fabrication d'un dispositif d'affichage souple

Applications Claiming Priority (1)

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PCT/JP2017/014357 WO2018185907A1 (fr) 2017-04-06 2017-04-06 Dispositif laser à semi-conducteur, peeling dispositif, et procédé de fabrication d'un dispositif d'affichage souple

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207088A (ja) * 1985-03-12 1986-09-13 Nippon Hoso Kyokai <Nhk> レ−ザ出力合成装置
JPH0260179A (ja) * 1988-08-26 1990-02-28 Fuji Photo Film Co Ltd 合波用レーザ光源装置
JP2010263063A (ja) * 2009-05-07 2010-11-18 Sumitomo Heavy Ind Ltd レーザ照射装置
JP2015072956A (ja) * 2013-10-02 2015-04-16 株式会社島津製作所 発光装置
JP2015194642A (ja) * 2014-03-31 2015-11-05 株式会社東芝 フレキシブルデバイスの製造方法及び装置
US20150333471A1 (en) * 2014-03-25 2015-11-19 Kla-Tencor Corporation High Power Broadband Light Source

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207088A (ja) * 1985-03-12 1986-09-13 Nippon Hoso Kyokai <Nhk> レ−ザ出力合成装置
JPH0260179A (ja) * 1988-08-26 1990-02-28 Fuji Photo Film Co Ltd 合波用レーザ光源装置
JP2010263063A (ja) * 2009-05-07 2010-11-18 Sumitomo Heavy Ind Ltd レーザ照射装置
JP2015072956A (ja) * 2013-10-02 2015-04-16 株式会社島津製作所 発光装置
US20150333471A1 (en) * 2014-03-25 2015-11-19 Kla-Tencor Corporation High Power Broadband Light Source
JP2015194642A (ja) * 2014-03-31 2015-11-05 株式会社東芝 フレキシブルデバイスの製造方法及び装置

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