WO2018190672A1 - Procédé de production d'un complexe organométallique comprenant un élément du groupe 4b - Google Patents
Procédé de production d'un complexe organométallique comprenant un élément du groupe 4b Download PDFInfo
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- WO2018190672A1 WO2018190672A1 PCT/KR2018/004338 KR2018004338W WO2018190672A1 WO 2018190672 A1 WO2018190672 A1 WO 2018190672A1 KR 2018004338 W KR2018004338 W KR 2018004338W WO 2018190672 A1 WO2018190672 A1 WO 2018190672A1
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- metal
- organic
- acid
- organic framework
- framework
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000012621 metal-organic framework Substances 0.000 claims abstract description 100
- 150000001412 amines Chemical class 0.000 claims abstract description 47
- 239000011148 porous material Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 27
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims description 120
- 239000002131 composite material Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 13
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 12
- 239000013110 organic ligand Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 6
- 230000006837 decompression Effects 0.000 claims description 6
- 235000019253 formic acid Nutrition 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 claims description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- PAMBMUOTYPLTQG-UHFFFAOYSA-N 2-[2,3-bis(2-carboxyphenyl)phenyl]benzoic acid Chemical compound OC(=O)C1=CC=CC=C1C1=CC=CC(C=2C(=CC=CC=2)C(O)=O)=C1C1=CC=CC=C1C(O)=O PAMBMUOTYPLTQG-UHFFFAOYSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims description 2
- 229960000250 adipic acid Drugs 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N benzene-dicarboxylic acid Natural products OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
- 239000004220 glutamic acid Substances 0.000 claims description 2
- LVPMIMZXDYBCDF-UHFFFAOYSA-N isocinchomeronic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)N=C1 LVPMIMZXDYBCDF-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- KVQQRFDIKYXJTJ-UHFFFAOYSA-N naphthalene-1,2,3-tricarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C(C(=O)O)=CC2=C1 KVQQRFDIKYXJTJ-UHFFFAOYSA-N 0.000 claims description 2
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- GJAWHXHKYYXBSV-UHFFFAOYSA-N pyridinedicarboxylic acid Natural products OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 claims description 2
- AKGNIBXGIPMDLE-UHFFFAOYSA-N pyridine-4-carboxylic acid Chemical compound OC(=O)C1=CC=NC=C1.OC(=O)C1=CC=NC=C1 AKGNIBXGIPMDLE-UHFFFAOYSA-N 0.000 claims 1
- 239000002575 chemical warfare agent Substances 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 23
- 238000001179 sorption measurement Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000003786 synthesis reaction Methods 0.000 description 16
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 14
- QPJDMGCKMHUXFD-UHFFFAOYSA-N cyanogen chloride Chemical compound ClC#N QPJDMGCKMHUXFD-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000013043 chemical agent Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- INBDPOJZYZJUDA-UHFFFAOYSA-N methanedithiol Chemical compound SCS INBDPOJZYZJUDA-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- KGBUQHGXOAESDX-UHFFFAOYSA-N [Zr].OOO Chemical compound [Zr].OOO KGBUQHGXOAESDX-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- -1 and 6B elements Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000013384 organic framework Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 150000001450 anions Chemical group 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 2
- DQRLCTAGMVGVFH-UHFFFAOYSA-N cyanide;hydrochloride Chemical compound Cl.N#[C-] DQRLCTAGMVGVFH-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- AUHJGNRGMBUPCP-UHFFFAOYSA-N 3h-dithiole;methane Chemical group C.C1SSC=C1 AUHJGNRGMBUPCP-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GHDSNRQFECQVII-UHFFFAOYSA-N [Ti].OOO Chemical compound [Ti].OOO GHDSNRQFECQVII-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021518 metal oxyhydroxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000013259 porous coordination polymer Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Definitions
- the present invention relates to a method for preparing a metal-organic composite having excellent performance in removing a chemical agent based on a metal-organic framework (MOF), which is a porous material.
- MOF metal-organic framework
- Activated carbon used in gas masks in the seventh and eighties was mainly ASC impregnated activated carbon containing hexavalent chromium, which caused problems with disposal methods and environmental hazards due to the toxicity of hexavalent chromium.
- ASZM-TEDA activated carbon containing triethylenediamine (TEDA) an organic amine that does not contain chromium, has been developed and used until recently to solve this problem.
- U.S. Patent No. 5,063,196 discloses about 5% copper by controlling the ratio of metal precursor and organic amine in the case of ASZM-TEDA activated carbon including silver (Ag), copper (Cu), zinc (Zn) and molybdenum (Mo). , 0.05% silver, impregnated with 5% zinc, 2% molybdenum and 3% TEDA to propose an activated carbon manufacturing method supported on activated carbon.
- the porous carbon carrier is impregnated with a transition metal such as copper, zinc, molybdenum, silver, vanadium, and organic amine, it can be dispersed or dissolved in solution.
- a transition metal such as copper, zinc, molybdenum, silver, vanadium, and organic amine
- the amount of the metal and the organic amine is limited, and in particular, because of the nature of the activated carbon has a fine pores, when the content of the metal precursor is large, it is difficult to support a large amount of the metal active material in the pores by blocking the inlet of the micropores of the carrier.
- expensive silver since expensive silver is used, it is difficult to secure economic feasibility.
- Metal-organic frameworks are also commonly referred to as 'porous coordination polymers' or 'porous organic-inorganic hybrids'. They have the advantage of providing a large surface area with nano-sized pores. It is used in adsorbents, gas storage materials, sensors, membranes, functional thin films, drug delivery materials, catalysts and catalyst carriers, and is used for adsorption and removal of substances by carrying the composition in the pores. It has been actively studied because it can be used to capture molecules or use pores to separate molecules according to size, and can also be applied to catalysis using various active metals present in the structure of the metal-organic framework.
- the present invention is to solve the problems as described above by a vapor-vacuum deposition method in the pores of the metal-organic skeleton containing elements of group 4B based on the periodic table (IUPAC inorganic chemical nomenclature revised edition, 1989) as a metal element It is an object to provide a method for preparing a metal-organic composite having at least 10% by weight of organic amine deposited to have excellent performance in removing chemical agents.
- Metal-organic composite manufacturing method of the present invention for achieving the above object is the first step (S100) to prepare a metal-organic framework and the organic amine by vapor-vacuum deposition method in the pores of the metal-organic framework And depositing a second step (S200), which is performed as shown in the flowchart shown in FIG.
- the first step (S100) is a step for preparing a metal-organic framework containing an element of Group 4B based on the periodic table (IUPAC Inorganic Chemistry Nomenclature, 1989), and a solvent with a metal precursor and an organic ligand.
- Preparing a precursor solution by mixing in a step (S110), heating the prepared precursor solution at a crystallization temperature to synthesize a metal-organic framework (S120), and purifying to obtain a synthesized metal-organic framework. It may be made, including (S130).
- the metal precursor is a compound containing any one metal of zirconium (Zr), titanium (Ti), and hafnium (Hf) as an element of Group 4B.
- Zr zirconium
- Ti titanium
- Hf hafnium
- Each independently may be any one or more selected from chloride, nitrate, sulfate and acetate compounds of each metal.
- the metal precursor is a zirconium precursor, a titanium precursor and a hafnium precursor, preferably a metal oxyhydroxide material, such as titanium oxyhydroxide, zirconium oxyhydroxide and zirconium oxyhydroxide.
- a metal oxyhydroxide material such as titanium oxyhydroxide, zirconium oxyhydroxide and zirconium oxyhydroxide.
- Hafnium oxyhydroxide may be used, but is not limited thereto.
- the organic ligand which is another component of the metal-organic framework, is also called a linker, and any organic compound having a coordinating functional group can be used.
- the organic ligand may be a carboxyl group (-COOH), carboxylic acid anion group (-COO -), an amine group (-NH 2), and an imino group (-NH), a nitro group (-NO 2), a hydroxy group (-OH), a halogen group (-X) and diepon acid ( -SO 3 H), a sulfonic acid anion group (-SO 3 -), methane dithiol Osan group (-CS 2 H), methane dithiol Osan anion group (-CS 2 -), one selected from the group consisting of a pyridine group and a pyrazine Compounds or mixtures thereof having the above functional groups can be used.
- organic ligands include benzenedicarboxylic acid, naphthalenedicarboxylic acid, benzenetricarboxylic acid, naphthalenetricarboxylic acid, benzenetribenzoic acid, pyridinedicarboxylic acid, bipyridyldicarboxylic acid, and formic acid.
- (formic acid), oxalic acid, malonic acid, succinic acid, glutamic acid, hexanedioic acid, heptanedioic acid and cyclohexyldicarboxylic acid may be used, and more preferably, the chemical formula of FIG. Benzene-1,3,5-tricarboxylic acid (BTC), such as 1 ').
- the metal-organic skeleton having a hydroxide functional group such as the acid (HCl), which is a decomposition product of cyanide chloride (CK) having a molecular formula of CNCl
- the metal used in the present invention it is preferable that the organic skeleton uses what contains a hydroxide functional group.
- the solvent used to prepare the precursor solution may be used without limitation as long as it is a solvent capable of dissolving both a metal component and an organic ligand.
- a solvent capable of dissolving both a metal component and an organic ligand for example, water, N, N-dimethylformamide (DMF), N, N-diethylformamide (DEF), N, N-dimethylacetamide (DMAc), ethylene glycol, glycerol, polyethylene Glycol, acetone, methyl ethyl ketone, hexane, heptane, octane, acetonitrile, dioxane, chlorobenzene, pyridine, N-methyl pyrrolidone (NMP), sulfolane, tetrahydrofuran (THF), gamma-butyrolactone , Cyclohexanol and alcohols such as methanol, ethanol, and propanol may be used, and two
- a solvent heat synthesis or microwave synthesis for synthesizing the metal-organic framework is performed by performing a crystallization reaction by heating a predetermined time by heating solvent heat, microwaves or ultrasonic waves.
- Metal-organic frameworks can be synthesized.
- the synthesized metal-organic skeleton is purified for a predetermined time in the presence of a solution (solvent) for a predetermined time to obtain a synthesized metal-organic skeleton.
- the purification method may be performed by a conventional centrifugation method and the like, but is not limited thereto.
- the metal-organic framework of the present invention synthesized in this manner may be represented by the following Chemical Formula 2 as a non-limiting example.
- M is any one metal selected from Ti 4 + , Zr 4 +, and Hf 4 +
- L is a carboxyl group (-COOH), a carboxylic acid anion group (-COO ⁇ ), or an amine group (-NH 2) and the imino group (-NH), a nitro group (-NO 2), a hydroxy group (-OH), a halogen group (-X) and diepon acid group (-SO 3 H), a sulfonic acid anion group (-SO 3 -), Osan methane dithiol group (-CS 2 H), methane dithiol Osan anion group (-CS 2 -), a compound or a mixture thereof is an organic ligand having at least one functional group selected from the group consisting of pyridine group and pyrazinyl group.
- ⁇ 3 in Formula 2 means a structure in which oxygen (O) is bonded to three zirconiums (Zr).
- the second step (S200) is a metal-deposited organic amine of 1 to 30% by weight based on 100% by weight of the total metal-organic framework in the pores of the metal-organic framework prepared in the first step (S100)- It is a step of preparing an organic complex.
- the second step (S200) is an activation step (S210) for activating the metal-organic framework by placing the metal-organic framework in a reactor and heating to a predetermined temperature under vacuum reduced pressure conditions, the organic amine powder by vacuum decompression Vacuum drying step (S220) for removing excess water present in the amine powder, and the dried organic amine is heated to a certain temperature under vacuum decompression conditions to form a gaseous organic amine, and activated the formed gaseous organic amine It can be made by including a deposition step (S230) to be injected into the reactor having a metal-organic skeleton at a constant rate and deposited in the pores of the activated metal-organic framework.
- S210 activation step for activating the metal-organic framework by placing the metal-organic framework in a reactor and heating to a predetermined temperature under vacuum reduced pressure conditions
- the organic amine powder by vacuum decompression Vacuum drying step (S220) for removing excess water present in the amine powder
- the organic amine may be any one selected from triethylenediamine, triethylamine and pyridine-4-carboxylic acid, or a mixture thereof, preferably Triethylenediamine can be used.
- the activation step (S210) is to put the metal-organic skeleton in the reactor and heated the reactor to a temperature of 110 to 150 °C under vacuum reduced pressure conditions of 1 ⁇ 10 -1 to 1 ⁇ 10 -5 torr, the metal-organic skeleton It can be activated by removing the moisture and impurities present in the pores of the sieve. If the pressure and the temperature ranges below the water and impurities in the pores of the metal-organic framework is not properly removed, the activation of the metal-organic framework is not properly made, there is a problem that the production of metal-organic complex is difficult, If the range exceeds, there is a problem in that excess energy is consumed in terms of energy efficiency compared to the activation reaction.
- the organic amine powder is vacuum-reduced to 1 ⁇ 10 ⁇ 1 to 1 ⁇ 10 ⁇ 5 torr at a temperature of 15 to 30 ° C. to remove moisture, and the temperature and pressure presented in the vacuum drying step. Outside the range, since the water removal of the organic amine is not made properly, it is difficult to form a gaseous organic amine in a later step, it is preferable to satisfy the conditions presented.
- the dried organic amine may be heated to a temperature of 110 to 150 ° C. under a vacuum decompression condition of 1 ⁇ 10 ⁇ 1 to 1 ⁇ 10 ⁇ 5 torr to form an organic amine in a gaseous state.
- a vacuum decompression condition 1 ⁇ 10 ⁇ 1 to 1 ⁇ 10 ⁇ 5 torr to form an organic amine in a gaseous state.
- the organic amine in the gaseous state is less than the pressure and temperature ranges described above, it is difficult to deposit in the pores of the activated metal-organic framework because the organic amines in the gaseous state are not properly changed, and when the pressure and temperature ranges are exceeded.
- Metal-Organic Frameworks Due to the rather high temperature, the deposition of organic amines in the pores of activated metal-organic frameworks is difficult.
- the crystal size of the metal-organic composite prepared by the above-described manufacturing method is preferably 100 nm or more on average.
- the "metal-organic complex” means a metal-organic framework in which organic amine is deposited or supported on pores of the metal-organic framework.
- the metal-organic composite including the Group 4B element prepared through the production method of the present invention has a crystal size of 100 nm or more and is excellent in crystallinity, and the metal-organic composite is prepared through the vapor-vapor deposition method. At least 10% by weight of organic amine is deposited in the pores of the metal-organic framework with respect to 100% by weight of the organic framework, which minimizes the reduction of the area of the active surface of the pores and has an excellent effect on the removal of chemical agents.
- FIG. 1 is a flowchart illustrating a method for preparing a metal-organic composite of the present invention.
- BTC 2 is a chemical formula of benzene-1,3,5-tricarboxylic acid (BTC).
- 3 is X of a metal-organic framework (MOF-808) including zirconium (Zr) having a crystal size of 100 nm or more prepared through microwave synthesis (a) and solvent thermal synthesis (b) according to an embodiment of the present invention.
- MOF-808 metal-organic framework
- Zr zirconium
- FIG. 4 is a photograph of a zirconium (Zr) -based metal-organic framework (MOF-808) synthesized by microwave synthesis according to an embodiment of the present invention with a scanning electron microscope (SEM).
- Zr zirconium
- MOF-808 metal-organic framework
- FIG. 5 is a photograph of a zirconium (Zr) -based metal-organic framework (MOF-808) synthesized by solvent thermal synthesis according to an embodiment of the present invention with a scanning electron microscope (SEM).
- Zr zirconium
- MOF-808 metal-organic framework
- Figure 6 shows a system for producing a metal-organic composite according to the present invention.
- XRD 7 is an X-ray diffraction (XRD) before and after deposition of triethylenediamine (TEDA) on a zirconium (Zr) -based metal-organic framework (MOF-808) according to an embodiment of the present invention. The analysis results are shown.
- FIG. 8 is a graph showing nitrogen adsorption results and BET specific surface areas before and after deposition of triethylenediamine (TEDA) on a zirconium (Zr) -based metal-organic framework (MOF-808) according to an embodiment of the present invention.
- TAA triethylenediamine
- Zr zirconium
- MOF-808 metal-organic framework
- process conditions such as reaction temperature, and the like are not particularly limited as long as they do not depart from the object of the present invention, and are considered to be optimal for the purpose of the present invention. Indicates the conditions.
- Example 1 synthesized a metal-organic composite named MOF-808 in Preparation Example 1 below as a method for preparing a metal-organic composite of the present invention.
- Preparation Example 1 relates to a method for producing a metal-organic skeleton containing zirconium (Zr), and a method for producing MOF-808 as a metal-organic framework containing zirconium (Zr). Chem. Soc. 2014, 136, 4369-4381).
- the preparation of the metal-organic framework of the present invention includes zirconium oxyhydroxide including zirconium (Zr) as a metal precursor and benzene-1,3,5-tricarboxylic acid (benzene-1) as an organic ligand.
- Precursor solution was prepared using N, N-dimethylformamide (DMF) as a solvent using 3,5-tricarbozylic acid (BTC) and formic acid.
- DMF N, N-dimethylformamide
- BTC 3,5-tricarbozylic acid
- the prepared precursor solution was heated at a crystallization temperature for a predetermined time to proceed with the synthesis of the metal-organic framework, in which the synthesis was performed by dissolution heat synthesis or microwave synthesis to shorten the reaction time.
- Dissolution heat synthesis synthesized the metal-organic framework by injecting the precursor solution into the tube through a micro metering pump and passing the heated section to a temperature of about 100 ° C.
- the synthesized metal-organic framework was called 'MOF- It is also indicated as 808-R '.
- a microwave was heated to a precursor solution at a temperature of 100 ° C. for 3 hours to form a metal-organic framework.
- the metal-organic framework synthesized by the microwave synthesis method is 'MOF-808-M'. Also referred to as.
- the metal-organic frameworks synthesized from the reaction solution after the reaction were sufficiently washed with N, N-dimethylformamide (DMF) and ethanol, and then the metal-organic framework crystals were recovered by centrifugation. It was then dried at a temperature of 100 °C.
- DMF N, N-dimethylformamide
- Table 1 summarizes the reaction conditions for preparing MOF-808.
- M represents a metal precursor
- L * represents an organic ligand
- DMF represents N, N-dimethylformamide
- FA ** represents formic acid.
- MOF-808 a metal-organic framework containing zirconium (Zr) as its core metal, is a porous nanostructure with a Zr 6 O 4 (OH) 4 (OOCH) 6 (BTC) 2 structure and has pores with sizes of 0.48 nm and 1.82 nm. It has a cage and its surface area is between 1300 and 2000 m 2 / g according to the synthesis method of MOF-808, and includes various zirconium (Zr) active sites such as metal hydroxides including acid / base functional groups. It is included.
- the metal-organic framework thus synthesized was analyzed by X-ray diffraction (XRD) analysis of the crystal structure of the powder after drying, as shown in FIG. 3, as shown in MOF-808-R and MOF-808. -M was confirmed to be consistent with the structure of the MOF-808 previously reported.
- XRD X-ray diffraction
- the synthesized metal-organic framework was confirmed crystal size through a scanning electron microscope.
- the crystal size was 500 to 600 nm on average, and the metal synthesized by the heat of melting synthesis method-
- MOF-808-R which is an organic skeleton, it was confirmed that it has a particle size of 200-400 nm on average. All of them have a crystal size of 100 nm or more, so the crystallinity is excellent.
- the active surface of the metal-organic framework is generally almost inside the pores of the metal-organic framework, it is necessary to secure the surface pore volume for quick and easy access to the interior of the pores during the deposition or adsorption of organic amines.
- the surface area of the metal-organic framework synthesized as described above is about 1300 ⁇ 2000 m 2 / g, it can be seen that the deposition of the organic amine is easy.
- Preparation Example 2 relates to a method of preparing a metal-organic composite by depositing an organic amine on the metal-organic framework prepared in Preparation Example 1, and a metal by vapor-vacuum deposition through a system as shown in FIG. 6. Organic complexes were prepared.
- the production system for manufacturing the metal-organic composite of the present invention is a quartz tubular reactor in which a furnace is formed in which a furnace is formed for depositing an organic amine in the pores of the metal-organic framework.
- a mass flow controller (MFC) for controlling the flow rate of an inert gas such as a helium (He) gas and an organic amine supply bulb which is prepared by heating the organic amine to form a gaseous organic amine and then supplied to the reactor.
- MFC mass flow controller
- FIG. 6 looks at the manufacturing method of the metal-organic composite of the present invention.
- the pores in the reduced pressure of 5 torr-metal prepared in Preparative Example 1 to an organic backbone chain MOF-808 frit disc (Fritted disk) is installed quartz temperature and 10 -1 to 10 into a 150 °C (quartz) tube reactor It activates by removing existing water and impurities.
- a bulb containing a certain amount of solid triethylenediamine (TEDA) as an organic amine was treated at room temperature and under reduced pressure (1 ⁇ 10 ⁇ 1 to 1 ⁇ 10 ⁇ 5 torr) to obtain a bulb and a tree. After removing the water present in ethylenediamine (TEDA), it is connected to a quartz reactor containing an activated metal-organic framework.
- X- X-ray diffraction
- TAA triethylenediamine
- MOF-808 zirconium -based metal-organic framework
- XRD ray diffraction
- Example 1 prepared a metal-organic composite by the same method as Preparation Example 2, except that the amount of triethylenediamine (TEDA) deposited, 8.4 wt%, 10 wt%, 14 wt%, 22 wt% and 23 A metal-organic composite was prepared in which wt% triethylenediamine (TEDA) was deposited.
- TAA triethylenediamine
- the deposition amount is indicated before 'TEDA-MOF-808', for example, 8.4 wt% of triethylenediamine (TEDA) was deposited in the form of "8.4 wt% TEDA-MOF-808" or "8.4 wt% TEDA-MOF-808".
- FIG. 8 shows nitrogen adsorption isotherms before and after the deposition of triethylenediamine (TEDA) on a zirconium (Zr) -based metal-organic framework (MOF-808), and a metal obtained by applying a BET equation to the measured nitrogen adsorption isotherms.
- the BET surface area value (cm 3 / g) per weight before and after triethylenediamine (TEDA) deposition on the organic framework was measured.
- FIG 8 (a) is the nitrogen adsorption curve of the metal-organic framework MOF-808 prior to the deposition of triethylenediamine (TEDA), (b) is a metal-organic deposition of 23% by weight of triethylenediamine (TEDA) The nitrogen adsorption curve of the framework is shown.
- the BET surface area of diamine (TEDA) -deposited metal-organic ear was 1092m 2 / g, the pore volume was 0.49 ml / g, and the BET surface area and the pore volume were confirmed to be small.
- CK cyanogen chloride
- CK cyanide breakthrough experiment uses a 4 mm inner diameter glass tube as the adsorption reactor, and the adsorption reactor was filled with a metal-organic composite of 0.1 ml and a filling height of about 8 cm. Do this.
- the metal-organic composite is formed by pulverizing the metal-organic composite in powder form in order to evaluate the adsorption performance, and then pulverized, and has a particle size in which the pressure drop in the adsorption reactor can be minimized. 70 mesh) size particles were used.
- the metal-organic complex of the present invention is chloride
- the deposition amount of organotriethylenediamine (TEDA) increased, it was confirmed that the removal efficiency was increased due to the good adsorption to cyanogen chloride (CK).
- Example 2 was 29 wt% by the same method as Preparation Example 2, except that the BET surface area of MOF-808, a metal-organic framework on which triethylenediamine (TEDA) was deposited, was 1610 m 2 / g. And 29 wt% TEDA-MOF-808 and 30 wt% TEDA-MOF-808 with 30 wt% triethylenediamine (TEDA) deposited.
- the BET surface area of MOF-808 a metal-organic framework on which triethylenediamine (TEDA) was deposited.
- CK cyanogen chloride
- the TEDA-MOF-808 produced by the vapor-vacuum deposition method according to the present invention is up to three times more than the CK removal performance of the conventional ASZM-TEDA activated carbon.
- the metal-organic composite prepared by the vapor-vacuum deposition method according to the metal-organic composite manufacturing method of the present invention is a tree which is an organic amine substance having high decomposition activity to chemical agents in the pores of the metal-organic framework.
- Ethylenediamine (TEDA) was confirmed to be deposited at 10 to 30% by weight.
- the pore size is measured in the present specification, although not shown in the drawings of the present invention, when the metal-organic composite is prepared using the vapor-vacuum vapor deposition method of the present invention, it is included in the structure of the MOF-808.
- UPUPAC International Union of Pureand Applied Chemistry
- the volume of mesoporous cells with a range of 2-50 nm is maintained at about 50%, indicating that the active surface, which is an adsorption site for the removal of chemical agents, is activated. I could confirm it.
- the metal-organic composite prepared according to the production method of the present invention can minimize the pore volume and surface area of the metal-organic framework, which is a porous material, to deposit an organic amine material at 1 to 30% by weight, in particular, As deposited as 10-30% by weight or more, it has excellent performance in removing chemical agents including cyanide chloride (CK).
- CK cyanide chloride
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Abstract
La présente invention concerne un procédé de production d'un complexe organométallique comprenant un élément du groupe 4B, et plus particulièrement, un procédé de production d'un complexe organométallique présentant une excellente fonction d'élimination d'agents de guerre chimique, le procédé comprenant : une première étape de préparation d'une structure organométallique comprenant n'importe quel élément du groupe 4B parmi le zirconium (Zr), le titane (Ti) et l'hafnium (Hf) ; et une seconde étape de production d'un complexe organométallique par dépôt d'une amine organique dans les pores de la structure organométallique au moyen d'un procédé de dépôt en phase vapeur sous vide.
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CN116237018A (zh) * | 2023-03-16 | 2023-06-09 | 中国辐射防护研究院 | 一种气载放射性碘核级活性炭的制备方法 |
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