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WO2018198222A1 - Appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif - Google Patents

Appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif Download PDF

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Publication number
WO2018198222A1
WO2018198222A1 PCT/JP2017/016524 JP2017016524W WO2018198222A1 WO 2018198222 A1 WO2018198222 A1 WO 2018198222A1 JP 2017016524 W JP2017016524 W JP 2017016524W WO 2018198222 A1 WO2018198222 A1 WO 2018198222A1
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WO
WIPO (PCT)
Prior art keywords
magnetic field
exposure apparatus
beam optical
coil
electron beam
Prior art date
Application number
PCT/JP2017/016524
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English (en)
Japanese (ja)
Inventor
山本　篤史
Original Assignee
株式会社ニコン
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Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to PCT/JP2017/016524 priority Critical patent/WO2018198222A1/fr
Priority to TW107108377A priority patent/TW201907233A/zh
Publication of WO2018198222A1 publication Critical patent/WO2018198222A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to the technical field of, for example, an exposure apparatus that irradiates an object with a charged particle beam, an exposure method that uses the exposure apparatus, and a device manufacturing method that manufactures a device using the exposure method.
  • an exposure apparatus using a charged particle beam for example, an electron beam
  • a spot smaller than the resolution limit of an exposure apparatus that uses ultraviolet light as exposure light is formed with a charged particle beam, and the spot is moved relative to an object such as a substrate.
  • An exposure apparatus for exposing a substrate is described.
  • the charged particle beam may be affected by the remaining magnetic field.
  • a beam optical system capable of irradiating an object with a charged particle beam and a first characteristic having a first characteristic with respect to a space between the beam optical system and the object.
  • a first magnetic field generator capable of generating a magnetic field of the first and a second magnetic field having a second characteristic different from the first characteristic can be generated in a space between the beam optical system and the object. Second magnetic field generator.
  • the object is exposed using the first aspect of the exposure apparatus of the present invention described above.
  • a first aspect of the device manufacturing method of the present invention is a device manufacturing method including a lithography process, and in the lithography process, the object is exposed by the first aspect of the exposure method of the present invention described above.
  • FIG. 1 is a perspective view showing the appearance of the exposure apparatus.
  • FIG. 2 is a perspective view showing the external appearance of the electron beam irradiation apparatus and the stage apparatus provided in the exposure apparatus.
  • FIG. 3 is a cross-sectional view showing a cross section of the electron beam irradiation apparatus and the stage apparatus provided in the exposure apparatus.
  • FIG. 4 is a cross-sectional view showing a cross section of the electron beam optical system (a cross section including the optical axis of the electron beam optical system).
  • FIG. 5A is a cross-sectional view showing a partial cross section (specifically, a cross section along the YZ plane) of the magnetic field generator, and
  • FIG. 5B is a magnetic field shown in FIG. FIG.
  • FIG. 5C is a cross-sectional view showing a partial cross section of the magnetic field generator (specifically, a cross section taken along the XZ plane).
  • FIG. 5D is a one-point perspective view showing a part of the magnetic field generator shown in FIG.
  • FIG. 6A to FIG. 6C is a cross-sectional view showing a part of the magnetic field generated by the magnetic field generator.
  • FIG. 7 is a cross-sectional view schematically showing the internal leakage magnetic field.
  • FIG. 8 is a cross-sectional view schematically showing an external leakage magnetic field.
  • FIG. 9 is a cross-sectional view showing a propagation path of an electron beam affected by a leakage magnetic field.
  • FIG. 10A is a cross-sectional view showing the relationship between the internal leakage magnetic field and the cancellation magnetic field.
  • FIG. 10B is a cross-sectional view showing the internal leakage magnetic field affected by the canceling magnetic field.
  • FIG. 11A is a cross-sectional view showing the relationship between the external leakage magnetic field and the cancellation magnetic field.
  • FIG. 11B is a cross-sectional view showing an external leakage magnetic field affected by the canceling magnetic field.
  • FIG. 12A to FIG. 12C is a cross-sectional view showing a part of a magnetic field generated by a magnetic field generator including a plurality of coils.
  • FIG. 13A to 13C is a cross-sectional view showing a part of a magnetic field generated by a magnetic field generator including a plurality of coils.
  • FIG. 14 is a cross-sectional view showing a cross section of the electron beam irradiation apparatus and the stage apparatus included in the exposure apparatus of the first modification.
  • FIG. 15A is a cross-sectional view showing a partial cross-section (specifically, a cross-section along the YZ plane) of the magnetic field generator of the first modification, and FIG. It is a top view which shows an upper surface.
  • FIG. 16 is a cross-sectional view showing a partial cross section (specifically, a cross section along the YZ plane) of the magnetic field generator of the second modification.
  • FIG. 17 is a cross-sectional view showing a partial cross section (specifically, a cross section along the YZ plane) of the magnetic field generator of the third modification.
  • FIG. 18 is a cross-sectional view showing a partial cross section (specifically, a cross section along the YZ plane) of the magnetic field generator of the fourth modified example.
  • FIG. 19A and FIG. 19B is a cross-sectional view showing a partial cross section (specifically, a cross section along the YZ plane) of the magnetic field generator of the fifth modification.
  • FIG. 20A to FIG. 20C is a cross-sectional view showing a part of the magnetic field generated by the magnetic field generator of the fifth modification.
  • FIG. 20A to FIG. 20C is a cross-sectional view showing a part of the magnetic field generated by the magnetic field generator of the fifth modification.
  • FIG. 21 is a cross-sectional view showing a cross section of an electron beam irradiation apparatus and a stage apparatus included in the exposure apparatus of the sixth modified example.
  • FIG. 22 is a cross-sectional view showing a cross section of an electron beam irradiation apparatus and a stage apparatus included in the exposure apparatus of the seventh modified example.
  • FIG. 23 is a plan view showing irradiation positions (irradiation areas) of a plurality of electron beams and arrangement positions of a plurality of electron beam optical systems on the wafer.
  • FIG. 24A is a cross-sectional view showing a correspondence relationship between a plurality of magnetic field generators and a plurality of electron beam optical systems in the seventh modification on the YZ plane, and FIG. 24B is a seventh modification.
  • FIG. 25A is a cross-sectional view showing a correspondence relationship between the plurality of magnetic field generators and the plurality of electron beam optical systems in the eighth modification on the YZ plane
  • FIG. 25B is the eighth modification. It is a top view which shows the corresponding relationship of the some magnetic field generator and several electron beam optical system in an example on XY plane.
  • FIG. 26 is a flowchart showing the flow of the device manufacturing method.
  • an exposure apparatus that is, an electron beam exposure apparatus
  • EX that is, an electron beam exposure apparatus
  • the exposure apparatus EX may expose the wafer W so as to draw a pattern on the wafer W with the electron beam EB, or expose the wafer W so as to transfer the pattern of the minute mask onto the wafer W with the electron beam EB. Also good.
  • each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in the horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). Yes, in the vertical direction).
  • the Z-axis direction is also a direction parallel to an optical axis AX of an electron beam optical system 12 described later provided in the exposure apparatus EX.
  • the rotation directions around the X axis, the Y axis, and the Z axis are referred to as a ⁇ X direction, a ⁇ Y direction, and a ⁇ Z direction, respectively.
  • FIG. 1 is a perspective view showing the appearance of the exposure apparatus EX.
  • FIG. 2 is a perspective view showing the appearance of the electron beam irradiation apparatus 1 and the stage apparatus 2 provided in the exposure apparatus EX.
  • FIG. 3 is a cross-sectional view showing cross sections of the electron beam irradiation apparatus 1 and the stage apparatus 2 provided in the exposure apparatus EX.
  • the exposure apparatus EX includes an electron beam irradiation apparatus 1, a stage apparatus 2, and a control apparatus 3 (however, the control apparatus 3 is not shown in FIGS. 2 and 3). ing.
  • the electron beam irradiation apparatus 1 can irradiate the wafer W held by the stage apparatus 2 with the electron beam EB.
  • the stage device 2 is movable while holding the wafer W.
  • the control device 3 controls the operation of the exposure apparatus EX.
  • the wafer W is a semiconductor substrate coated with an electron beam resist (or any photosensitive agent or sensitive material).
  • the wafer W is, for example, a disk-shaped substrate having a diameter of 300 mm and a thickness of 700 ⁇ m to 800 ⁇ m.
  • the wafer W may be a substrate of an arbitrary shape having an arbitrary size.
  • a plurality of rectangular shot areas S exposed by an electron beam EB irradiated by an electron beam optical system 12 (described later) provided in the exposure apparatus EX can be set. For example, when the size of one shot area S is 26 mm ⁇ 33 mm, about 100 shot areas S can be set on the wafer W.
  • a shot area S that is partially missing may be set.
  • a part of the electron beam irradiation apparatus 1 is disposed in the exposure chamber Ca.
  • a lower end portion of a lens barrel 11 described later in the electron beam irradiation apparatus 1 (that is, a part of the electron beam irradiation apparatus 1 located on the stage device 2 side) is an exposure chamber.
  • the entire stage apparatus 2 is disposed in the exposure chamber Ca.
  • the entire electron beam irradiation apparatus 1 may be disposed in the exposure chamber Ca.
  • the electron beam irradiation apparatus 1 includes a cylindrical lens barrel 11.
  • the space inside the lens barrel 11 becomes a vacuum space during the period when the electron beam EB is irradiated.
  • the space inside the lens barrel 11 is connected to the chamber space Caz in the exposure chamber Ca via the lower open end of the lens barrel 11 (that is, an opening through which the electron beam EB can pass). The For this reason, the space inside the lens barrel 11 becomes a vacuum space as the chamber space Caz is exhausted.
  • the electron beam irradiation apparatus 1 includes a metrology frame 13 for supporting the lens barrel 11 from below.
  • the metrology frame 13 includes an annular plate member in which three convex portions are formed on the outer peripheral portion at intervals of a central angle of 120 degrees.
  • the lowermost end portion of the lens barrel 11 is a small diameter portion having a smaller diameter than the upper portion above the lowermost end portion of the lens barrel 11.
  • a boundary portion between the lowermost end portion of the lens barrel 11 and the upper portion of the lens barrel 11 is a stepped portion. This lowermost end is inserted into the circular opening of the metrology frame 13. Further, the bottom surface of the step portion contacts the upper surface of the metrology frame 13. As a result, the lens barrel 11 is supported from below by the metrology frame 13.
  • the electron beam irradiation apparatus 1 further includes three suspension support mechanisms 14 for supporting the metrology frame 13.
  • the metrology frame 13 is suspended and supported from the outer frame frame F (see FIG. 3) via three suspension support mechanisms 14 each having a lower end connected to the three convex portions described above.
  • Each suspension support mechanism 14 includes a wire 14 a having one end connected to the metrology frame 13 and a passive vibration-proof pad 14 b connecting the other end of the wire 14 a and the outer frame F.
  • the anti-vibration pad 14b includes, for example, at least one of an air damper and a coil spring. For this reason, the vibration-proof pad 14b prevents the vibration of the outer frame F from being transmitted to the metrology frame 13 (and the lens barrel 11).
  • a part of the electron beam irradiation apparatus 1 is disposed in the exposure chamber Ca.
  • the metrology frame 13 corresponds to a part of the electron beam irradiation apparatus 1 arranged in the exposure chamber Ca.
  • a part of the lens barrel 11 also corresponds to a part of the electron beam irradiation apparatus 1 disposed in the exposure chamber Ca.
  • an opening Cao is formed on the upper surface of the exposure chamber Ca as shown in FIG. That is, the exposure chamber Ca includes an annular (or frame-like) flange portion Caf for defining the opening Cao as a part of the partition wall of the exposure chamber Ca.
  • the connecting portion 4 is an annular (or frame-shaped) plate 41 disposed on the upper surface of the flange portion Caf, and an annular (or a frame) connecting the plate 41 and the metrology frame 13 so as to surround the lens barrel 11 (or A frame-like) bellows 42.
  • the outer peripheral portion of the lower surface of the plate 41 is connected to the upper surface of the flange portion Caf over the entire periphery.
  • the upper part of the bellows 42 is connected to the inner peripheral part of the lower surface of the plate 41 over the entire circumference.
  • the lower part of the bellows 42 is connected to the upper surface of the metrology frame 13 over the entire circumference. For this reason, the airtightness of the space surrounded by the exposure chamber Ca, the plate 41, the bellows 42, the metrology frame 13 and the lens barrel 11 is ensured. That is, the exposure chamber Ca, the plate 41, the bellows 42, the metrology frame 13 and the lens barrel 11 form a vacuum space in which the stage device 2 (particularly, the wafer W held by the stage device 2) is accommodated. Further, the bellows 42 prevents the vibration of the exposure chamber Ca (in particular, the vibration in the Z-axis direction) from being transmitted to the metrology frame 13 (and the lens barrel 11).
  • the electron beam irradiation apparatus 1 further includes an electron beam optical system (in other words, an optical system column) 12 in the lens barrel 11.
  • the electron beam optical system 12 can irradiate the electron beam EB. Note that the specific structure of the electron beam optical system 12 will be described later in detail (see FIG. 4), and thus the description thereof is omitted here.
  • the stage device 2 is disposed below the electron beam irradiation device 1 (that is, on the ⁇ Z side).
  • the stage device 2 includes a surface plate 21 and a stage 22.
  • the surface plate 21 is disposed on the bottom surface of the exposure chamber Ca.
  • the stage 22 is disposed on the surface plate 21.
  • an anti-vibration device (not shown) for preventing the vibration of the surface plate 21 from being transmitted to the stage 22 is installed.
  • the stage 22 can hold the wafer W. Accordingly, the wafer W is exposed by the electron beam EB irradiated by the electron beam irradiation apparatus 1 while being held on the stage 22.
  • the stage 22 can move along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction while holding the wafer W under the control of the control device 3. .
  • the stage apparatus 2 includes a stage drive system 23 (see FIG. 4).
  • the stage drive system 23 moves the stage 22 using, for example, an arbitrary motor (for example, a linear motor).
  • the stage apparatus 2 includes a position measuring device 24 for measuring the position of the stage 22.
  • the position measuring device 24 includes, for example, at least one of an encoder and a laser interferometer.
  • the stage drive system 23 and the position measuring device 24 are not shown in FIGS. 1 and 2, but are shown only in FIG.
  • FIG. 3 shows a cross section of the exposure apparatus EX, the cross section of the stage drive system 23 and the position measuring device 24 may not be shown.
  • the exposure apparatus EX further includes a magnetic field generator 5.
  • the magnetic field generator 5 is disposed on the stage device 2. In the example shown in FIG. 3, the magnetic field generator 5 is embedded in the stage 22.
  • the magnetic field generator 5 is disposed below the wafer W (that is, on the ⁇ Z side of the wafer W).
  • the magnetic field generator 5 is disposed below the holding region 221 in the stage 22 where the wafer W can be held.
  • the “position below X” is not only a position immediately below X (that is, a position at least partially overlapping with X along the Z-axis direction), but also along the Z-axis direction. It also includes a position on the ⁇ Z side of X at least partially without overlapping X.
  • the “position above X” is not only a position immediately above X (that is, a position at least partially overlapping with X along the Z-axis direction), but also along the Z-axis direction. In addition, it includes at least a portion on the + Z side of X, although it does not overlap at least partially with X.
  • the magnetic field generator 5 can generate a magnetic field.
  • the magnetic field generator 5 can generate a magnetic field at least in a space SP between the electron beam optical system 12 and the stage apparatus 2 (or the wafer W).
  • the structure of the magnetic field generator 5 will be described in detail later (refer to FIG. 5), and the description thereof is omitted here.
  • FIG. 4 is a cross-sectional view showing a cross section of the electron beam optical system 12 (a cross section including the optical axis AX of the electron beam optical system 12).
  • the electron beam optical system 12 includes a cylindrical casing 121 (in other words, a column cell) that is disposed in the lens barrel 11 and can shield an electromagnetic field.
  • the electron beam optical system 12 further includes a beam optical device 122 in the housing 121.
  • the beam optical device 122 may include, for example, an electron gun capable of emitting an electron beam EB.
  • the beam optical device 122 may include, for example, a shaping device that can shape the electron beam EB (for example, a shaping diaphragm that is a plate in which an opening having an arbitrary shape is formed, an electromagnetic lens, or the like).
  • the beam optical device 122 may include, for example, an objective lens (for example, an electromagnetic lens) that can image the electron beam EB on the surface of the wafer W at a predetermined reduction magnification.
  • the beam optical device 122 includes, for example, a deflector that can deflect the electron beam EB (for example, an electromagnetic deflector that can change the electron beam EB using a magnetic field, or a static that can change the electron beam EB using an electric field).
  • An electric deflector may be included.
  • the beam optical device 122 for example, rotates the amount of the image (that is, the position in the ⁇ Z direction) of the image formed on the predetermined optical surface (for example, the optical surface intersecting the optical path of the electron beam EB) by the electron beam EB.
  • the beam optical device 122 is, for example, a detection device that can detect an alignment mark or the like formed on the wafer W in order to perform alignment of the wafer W (for example, semiconductor-type reflected electrons using a pn junction or pin junction semiconductor). Detection device).
  • a lower end portion (that is, an end portion on the ⁇ Z side) 1211 of the housing 121 is opened to irradiate the electron beam EB. Accordingly, the electron beam optical system 12 irradiates the electron beam EB from the lower end portion 1211 of the housing 121 toward the outside of the housing 121 (that is, outside the electron beam optical system 12). As a result, the electron beam EB is applied to the wafer W positioned below the electron beam optical system 12.
  • the electron beam optical system 12 may not include the housing 121.
  • the lens barrel 11 may be used as the housing 121. That is, the lens barrel 11 may have the function of the housing 121.
  • FIG. 5A is a cross-sectional view showing a part of a cross section (specifically, a cross section along the YZ plane) of the magnetic field generator 5 together with the electron beam optical system 12, the stage 22, and the wafer W.
  • FIG. 5B is a one-point perspective view showing a part of the magnetic field generator 5 shown in FIG.
  • FIG. 5C is a cross-sectional view showing a partial cross section (specifically, a cross section along the XZ plane) of the magnetic field generator 5 together with the electron beam optical system 12, the stage 22, and the wafer W.
  • FIG. 5D is a one-point perspective view showing a part of the magnetic field generator 5 shown in FIG.
  • the magnetic field generator 5 includes a coil 51Z, a coil 52Y, and a coil 52X.
  • Each of the coils 51 ⁇ / b> Z, 52 ⁇ / b> Y, and 52 ⁇ / b> X can generate a magnetic field with respect to the space SP between the electron beam optical system 12 and the stage apparatus 2.
  • the electron beam optical system 12 includes the housing 121.
  • the space SP between the electron beam optical system 12 and the stage apparatus 2 is substantially the same as the space between the casing 121 (particularly, the lower end portion 1211 of the casing 121) and the stage apparatus 2. is there.
  • the electron beam EB propagates through the space SP between the electron beam optical system 12 and the stage apparatus 2 and is irradiated from the electron beam optical system 12 onto the wafer W. Therefore, the space SP is substantially the same as a space including a propagation path of the electron beam EB (that is, a path through which the electron beam EB propagates from the electron beam optical system 12 to the wafer W).
  • the coil 51Z includes a coil 511Z and a coil 512Z.
  • Each of the coils 511Z and 512Z is a winding wound on the XY plane.
  • Each of the coils 511Z and 512Z has a circular shape, but may have other shapes (for example, an ellipse, a rectangle, or a polygon).
  • the radius of the coil 511Z is the same as the radius of the coil 512Z.
  • the central axes of the coils 511Z and 512Z are parallel to the Z axis.
  • the coils 511Z and 512Z are arranged coaxially.
  • the coils 511Z and 512Z are arranged so as to be aligned along the Z-axis direction.
  • the coil 511Z is separated from the coil 512Z by a first predetermined distance along the Z axis.
  • the first predetermined distance is, for example, the size of each radius of the coils 511Z and 512Z.
  • the coil 51Z including the coils 511Z and 512Z is a Helmholtz type coil.
  • the coil 52Y includes a coil 521Y and a coil 522Y.
  • Each of the coils 521Y and 522Y is a winding wound on the XZ plane.
  • Each of the coils 521Y and 522Y has a circular shape, but may have other shapes (for example, an ellipse, a rectangle, or a polygon).
  • the radius of the coil 521Y is the same as the radius of the coil 522Y.
  • the central axes of the coils 521Y and 522Y intersect the central axes of the coils 511Z and 512Z. In the example shown in FIGS.
  • the central axes of the coils 521Y and 522Y are orthogonal to the central axes of the coils 511Z and 512Z. Therefore, the central axes of the coils 521Y and 522Y are parallel to the Y axis (in other words, parallel to the XY plane).
  • Coils 521Y and 522Y are arranged coaxially. The coils 521Y and 522Y are arranged so as to be aligned along the Y-axis direction. The coil 521Y is separated from the coil 522Y by a second predetermined distance along the Y axis. The second predetermined distance is, for example, the size of each radius of the coils 521Y and 522Y.
  • the coil 52Y including the coils 521Y and 522Y is a Helmholtz-type coil.
  • the coil 52X includes a coil 521X and a coil 522X.
  • Each of the coils 521X and 522X is a winding wound on the YZ plane.
  • Each of the coils 521X and 522X has a circular shape, but may have other shapes (for example, an ellipse, a rectangle, or a polygon).
  • the radius of the coil 521X is the same as the radius of the coil 522X.
  • the central axes of the coils 521X and 522X intersect the central axes of the coils 511Z and 512Z. In the example shown in FIGS.
  • the central axes of the coils 521X and 522X are orthogonal to the central axes of the coils 511Z and 512Z. Further, the respective central axes of the coils 521X and 522X intersect the respective central axes of the coils 521Y and 522Y. In the example shown in FIGS. 5A to 5D, the central axes of the coils 521X and 522X are orthogonal to the central axes of the coils 521Y and 522Y. Accordingly, the central axes of the coils 521X and 522X are parallel to the X axis (in other words, parallel to the XY plane). Coils 521X and 522X are arranged coaxially.
  • the coils 521X and 522X are arranged so as to be aligned along the X-axis direction.
  • the coil 521X is separated from the coil 522X by a third predetermined distance along the X axis.
  • the third predetermined distance is, for example, the size of each radius of the coils 521X and 522X.
  • the coil 52X including the coils 521X and 522X is a Helmholtz type coil.
  • the first drive current that can be adjusted under the control of the control device 3 is supplied to the coil 51Z.
  • the coil 51Z can generate a magnetic field according to the first drive current.
  • the coil 51Z can generate a magnetic field in the direction along the central axis of the coils 511Z and 512Z (that is, the Z axis) inside the coils 511Z and 512Z. is there.
  • the coil 51Z can generate a magnetic field that can be defined by magnetic lines of force along the Z axis inside the coils 511Z and 512Z. This magnetic field also extends to the space SP between the electron beam optical system 12 and the stage device 2.
  • the coil 51Z is mainly used to generate a magnetic field in the Z-axis direction in the space SP. More specifically, since the space SP is located above the coil 51Z, the coil 51Z generates a magnetic field that spreads radially from the central axis of the coils 511Z and 512Z toward the ⁇ Z side along the Z axis. Can occur. Thereby, the internal leakage magnetic field formed in the space SP as shown in FIG. 7 can be drawn in the ⁇ Z direction, and the influence of the magnetic field formed in the space SP can be reduced.
  • the direction of the first drive current flowing through the coils 511Z and 512Z is reversed, and a magnetic field that spreads radially from the central axis of the coils 511Z and 512Z toward the + Z side along the Z axis is generated in the space SP. It is also possible to suppress the generation of a leakage magnetic field from.
  • the second drive current that can be adjusted under the control of the control device 3 is supplied to the coil 52Y.
  • the coil 52Y can generate a magnetic field according to the second drive current.
  • the coil 52Y can generate a magnetic field in the direction along the central axis (that is, the Y axis) of the coils 521Y and 522Y inside the coils 521Y and 522Y. is there.
  • the coil 52Y can generate a magnetic field that can be defined by magnetic lines of force along the Y axis inside the coils 521Y and 522Y. This magnetic field also extends to the space SP between the electron beam optical system 12 and the stage device 2.
  • the coil 52Y is used to generate a magnetic field in the space SP mainly in the direction intersecting the Z axis (mainly in the Y axis direction). That is, the coil 52Y is used to generate a magnetic field in a direction different from the magnetic field generated by the coil 51Z. More specifically, the coil 52Y is used to generate a magnetic field in a direction orthogonal (or intersecting) with the direction of the magnetic field generated by the coil 51Z.
  • the second drive current is supplied so that the magnetic lines of force are directed rightward in the figure, but the direction of flow through the coils 521Y and 522Y is reversed so that the magnetic lines of force are directed leftward in the figure. May be.
  • the third drive current that can be adjusted under the control of the control device 3 is supplied to the coil 52X.
  • the coil 52X can generate a magnetic field according to the third drive current.
  • the coil 52X can generate a magnetic field in the direction along the central axis (that is, the X axis) of the coils 521X and 522X inside the coils 521X and 522X. is there.
  • the coil 52X can generate a magnetic field that can be defined by magnetic lines of force along the X axis inside the coils 521X and 522X. This magnetic field also extends to the space SP between the electron beam optical system 12 and the stage device 2.
  • the coil 52X is used to generate a magnetic field in the space SP mainly in the direction intersecting the Z axis (mainly in the X axis direction). That is, the coil 52X is used to generate a magnetic field in a direction different from the magnetic field generated by each of the coil 51Z and the coil 52Y. More specifically, the coil 52X is used to generate a magnetic field in a direction orthogonal to (or intersecting with) the direction of the magnetic field generated by the coil 51Z and the direction of the magnetic field generated by the coil 52Y.
  • the second drive current is supplied so that the magnetic lines of force are directed rightward in the figure, but the direction of flow through the coils 521X and 522X is reversed so that the magnetic lines of force are directed leftward in the figure. May be.
  • the magnetic field generated in the space SP is adjusted by appropriately combining the direction and magnitude of each magnetic field generated by the coil 52Z, the coil 52Y, and the coil 52X, or a method of supplying a driving current to each coil. It becomes possible to do.
  • At least a part of the magnetic field generated by the magnetic field generator 5 is a space SP between the electron beam optical system 12 and the wafer W among the magnetic fields generated inside the electron beam optical system 12 (that is, of the electron beam optical system 12). It is used to adjust the magnetic field leaking to the outside. Specifically, at least a part of the magnetic field generated by the magnetic field generator 5 adjusts the magnetic field leaked from the inside of the electron beam optical system 12 into the space SP, and the electrons caused by the leaked magnetic field. Used to suppress the influence on the beam EB. Therefore, the magnetic field generator 5 generates a magnetic field that can suppress the influence of the magnetic field leaking from the inside of the electron beam optical system 12 into the space SP.
  • At least a part of the magnetic field generated by the magnetic field generator 5 is used to adjust the magnetic field leaked into the space SP among the magnetic fields generated outside the electron beam optical system 12. Specifically, at least a part of the magnetic field generated by the magnetic field generator 5 adjusts the magnetic field leaked from the outside of the electron beam optical system 12 to the space SP, and the electrons caused by the leaked magnetic field. Used to suppress the influence on the beam EB. Accordingly, the magnetic field generator 5 generates a magnetic field capable of suppressing the influence of the magnetic field leaking from the outside of the electron beam optical system 12 into the space SP.
  • a magnetic field leaking from the inside of the electron beam optical system 12 into the space SP (that is, a magnetic field that affects the space SP) is referred to as an “internal leakage magnetic field”.
  • a magnetic field leaking from the outside of the electron beam optical system 12 into the space SP (that is, a magnetic field generated outside the electron beam optical system 12 that affects the space SP) is referred to as an “external leakage magnetic field”.
  • the internal leakage magnetic field and the external leakage magnetic field are collectively referred to as “leakage magnetic field”.
  • a magnetic field generated by the magnetic field generator 5 (that is, a magnetic field generated by each of the coils 51Z, 52Y, and 52X) is referred to as a “cancel magnetic field”.
  • a specific example of the magnetic field adjustment operation for adjusting the internal leakage magnetic field and the external leakage magnetic field using the cancellation magnetic field will be further described.
  • the electron beam optical system 12 includes a beam controller capable of generating a magnetic field for controlling the electron beam EB as at least a part of the beam optical device 122.
  • the electron beam optical system 12 includes an electromagnetic lens, a deflector, and the like as a beam controller.
  • the beam controller normally generates a magnetic field in the casing 121 to control the electron beam EB.
  • the housing 121 is made of a material having a relatively high magnetic permeability. That is, the housing 121 shields the magnetic field (in other words, the lines of magnetic force) generated by the beam controller inside the housing 121.
  • the lower end portion 1221 of the housing 121 is opened to irradiate the electron beam EB. Therefore, the magnetic field generated by the beam controller inside the housing 121 is difficult to leak to the outside through the housing 121, but may leak to the outside through the open end of the lower end portion 1211 of the housing 121. is there.
  • the magnetic field generated by the beam controller inside the housing 121 passes through the open end of the lower end portion 1211 of the housing 121.
  • a movable object for example, a wafer W mounted on the stage 22
  • a gap that is, a space SP
  • the magnetic field generated by the beam controller inside the casing 121 leaks out of the casing 121 through this gap.
  • FIG. 7 shows the strength of the internal leakage magnetic field (that is, the density of the magnetic field lines) for convenience in addition to the magnetic field lines of the internal leakage magnetic field.
  • the internal leakage magnetic field is mainly from the open end of the lower end portion 1211 of the casing 121 to the ⁇ Z side as shown in FIG. It becomes a magnetic field in a direction spreading radially.
  • the “direction of the magnetic field” in the present embodiment means the direction of the magnetic field lines constituting the magnetic field (in other words, capable of expressing the magnetic field). Therefore, “a magnetic field in one direction” means “a magnetic field composed of magnetic field lines along one direction (in other words, expressible)”.
  • an internal leakage magnetic field having an intensity gradient along the XY plane remains in the space SP between the electron beam optical system 12 and the wafer W.
  • an internal leakage magnetic field in which the direction of the magnetic lines of force intersects the Z-axis direction (that is, the direction of the optical axis AX) remains in the space SP.
  • an internal leakage magnetic field in which the direction of the magnetic force lines is not aligned in the Z-axis direction remains in the space SP.
  • the exposure apparatus EX includes, as a magnetic field generation source, an apparatus disposed outside the electron beam optical system 12 (that is, an apparatus different from the above-described beam controller included in the electron beam optical system 12).
  • the exposure apparatus EX includes a stage drive system 23 for moving the stage 22.
  • the stage drive system 23 includes a motor as described above. Since the motor includes a coil and a magnet, the stage drive system 23 including such a motor can be a magnetic field generation source.
  • a magnetic field generation source not only inside the exposure apparatus EX but also outside the exposure apparatus EX.
  • a coater / developer for applying an electron beam resist to the wafer W and developing the exposed wafer W is disposed.
  • the coater / developer also includes a stage that is movable while holding the wafer W. For this reason, the coater / developer also has a motor for moving the stage. Therefore, the coater / developer can be a magnetic field generation source.
  • the earth itself can be a magnetic field generation source.
  • Such an influence of the magnetic field generated by the magnetic field generation source outside the electron beam optical system 12 may reach the space SP between the electron beam optical system 12 and the wafer W.
  • the exposure apparatus EX includes a magnetic shield for shielding a magnetic field generated by an external magnetic field generation source
  • all the magnetic fields generated by the external magnetic field generation source are reliably shielded by the magnetic shield.
  • some structure for example, the exposure chamber Ca
  • all the magnetic fields generated by the external magnetic field generation source are related to the structure. It is not always possible to be shielded reliably by. As a result, the influence of the magnetic field generated by the external magnetic field generation source may reach the space SP.
  • FIG. 8 conveniently shows the strength of the external leakage magnetic field (that is, the density of the magnetic field lines) in addition to the magnetic field lines of the external leakage magnetic field.
  • An electron beam optical system 12 capable of shielding a magnetic field from an external magnetic field generation source is somewhat close to the space SP above the space SP where the external leakage magnetic field is generated (that is, on the + Z side).
  • a stage device 2 capable of shielding a magnetic field from an external magnetic field generation source to some extent is present close to the space SP.
  • the magnetic field from an external magnetic field generation source can be shielded somewhat, and close to the space SP.
  • the external leakage magnetic field is mainly a magnetic field in a direction intersecting the Z axis.
  • an external leakage magnetic field having an intensity gradient along the XY plane remains in the space SP between the electron beam optical system 12 and the wafer W.
  • an external leakage magnetic field in which the direction of the magnetic lines of force intersects the Z-axis direction (that is, the direction of the optical axis AX) remains in the space SP.
  • the amount of inclination of the electron beam EB relative to the optical axis AX (that is, the Z-axis direction) is proportional to the magnetic flux of the magnetic field in the space in which the electron beam EB propagates. Therefore, if the leakage magnetic field remains in the space on the wafer W, the incident angle of the electron beam EB to the surface of the wafer W is not zero as shown in FIG. Electromagnetic beam EB may enter obliquely). As a result, as shown in FIG. 9, the position of the irradiation area EA of the electron beam EB on the wafer W is shifted. For this reason, there is a possibility that the desired position on the wafer W cannot be irradiated with the electron beam EB. As a result, the exposure accuracy by the electron beam EB may be deteriorated.
  • the control device 3 of the present embodiment suppresses the influence of the leakage magnetic field by performing a magnetic field adjustment operation for adjusting the leakage magnetic field using the cancellation magnetic field generated by the magnetic field generator 5. Specifically, the control device 3 performs the magnetic field adjustment operation, thereby suppressing the tilt of the electron beam EB (specifically, the tilt with respect to the optical axis AX) due to the influence of the leakage magnetic field, and the positional deviation of the irradiation area EA. Suppress.
  • the details of the magnetic field adjustment operation will be further described.
  • FIG. 10A is a cross-sectional view showing the relationship between the internal leakage magnetic field and the cancellation magnetic field.
  • FIG. 10B is a cross-sectional view showing the internal leakage magnetic field affected by the canceling magnetic field.
  • the influence of the internal leakage magnetic field is mainly suppressed by the cancellation magnetic field generated by the coil 51Z. That is, the influence of the internal leakage magnetic field is suppressed mainly by the cancellation magnetic field generated by the coil 51Z acting on the internal leakage magnetic field.
  • the coil 51Z mainly generates a cancel magnetic field in the Z-axis direction in the space SP.
  • the cancel magnetic field generated by the coil 51Z is referred to as “cancel magnetic field BZ”.
  • the coil 51Z generates a cancel magnetic field BZ that can act on the internal leakage magnetic field so that the direction of the internal leakage magnetic field is aligned with the Z-axis direction.
  • the coil 51Z acts on the internal leakage magnetic field (that is, adjusts the internal leakage magnetic field) to allow the magnetic field in the Z-axis direction to remain in the space SP, while the magnetic field in the direction crossing the Z-axis is in the space.
  • a cancel magnetic field BZ that is not allowed to remain in the SP is generated.
  • the coil 51Z may generate a cancel magnetic field BZ that allows the magnetic field in the direction intersecting the Z axis to remain so small that exposure accuracy is hardly deteriorated.
  • the control device 3 supplies a first drive current capable of generating such a cancel magnetic field BZ to the coil 51Z.
  • the direction of the internal leakage magnetic field affected by the cancellation magnetic field BZ is aligned with the Z-axis direction.
  • a magnetic field in the Z-axis direction remains in the space SP due to the cancellation magnetic field BZ acting on the internal leakage magnetic field.
  • the magnetic field in the direction intersecting the Z axis due to the internal leakage magnetic field does not remain in the space SP. For this reason, the internal leakage magnetic field in which the intensity gradient exists along the XY plane does not remain in the space SP.
  • this state is substantially in the XY plane because the strength of the remaining magnetic field is very small. It can be equated with a state in which the internal leakage magnetic field in which there is a gradient of intensity along the gradient (in particular, a gradient large enough to affect the exposure accuracy) does not remain in the space SP. Accordingly, there is no position shift of the irradiation area EA of the electron beam EB on the wafer W due to the internal leakage magnetic field. For this reason, the deterioration of the exposure accuracy due to the internal leakage magnetic field is appropriately suppressed.
  • FIG. 11A is a cross-sectional view showing the relationship between the external leakage magnetic field and the cancellation magnetic field.
  • FIG. 11B is a cross-sectional view showing an external leakage magnetic field affected by the canceling magnetic field.
  • the influence of the external leakage magnetic field is mainly suppressed by the cancellation magnetic field generated by the coil 52Y and the coil 52X. That is, the influence of the external leakage magnetic field is suppressed mainly by the cancellation magnetic field generated by the coils 52Y and 52X acting on the external leakage magnetic field.
  • the coil 52Y generates a cancel magnetic field in the space SP mainly in a direction intersecting the Z axis (mainly in the Y axis direction).
  • the coil 52X also generates a canceling magnetic field in the space SP mainly in the direction intersecting the Z axis (mainly in the X axis direction).
  • the cancel magnetic field generated by the coil 52Y is referred to as “cancel magnetic field BY”, and the cancel magnetic field generated by the coil 52X is referred to as “cancel magnetic field BX”.
  • the coil 52Y generates a cancel magnetic field BY that can cancel the external leakage magnetic field in cooperation with the cancel magnetic field BX generated by the coil 52X.
  • the coil 52X generates a cancel magnetic field BX that can cancel the external leakage magnetic field by acting as the cancel magnetic field BY generated by the coil 52Y.
  • the operation to cancel the external leakage magnetic field corresponds to the operation to make the intensity of the external leakage magnetic field substantially zero.
  • the state where the intensity of the external leakage magnetic field becomes substantially zero is not only the state where the intensity of the external leakage magnetic field becomes completely zero, but hardly deteriorates the exposure accuracy by the electron beam EB (or exposure). It may also include a state in which an external leakage magnetic field with a minute intensity remains so small that the accuracy deterioration amount can be ignored.
  • the cancel magnetic field obtained by combining the cancel magnetic fields BY and BX (hereinafter referred to as “composite cancel magnetic field BXY”) is a magnetic field having characteristics different from those of the external leakage magnetic field.
  • the composite cancellation magnetic field BXY has, for example, the same magnetic flux distribution as that of the external leakage magnetic field and has a direction opposite to the direction of the external leakage magnetic field (that is, configures the external leakage magnetic field).
  • a magnetic field (consisting of magnetic field lines in a direction opposite to the direction of the magnetic field lines).
  • the control device 3 supplies the second and third drive currents capable of generating such cancel magnetic fields BY and BX to the coils 52Y and 52X, respectively.
  • the external leakage magnetic field is canceled as shown in FIG.
  • this state substantially intersects the Z axis because the strength of the remaining external leakage magnetic field is very small. This can be regarded as the state in which the external leakage magnetic field in the direction does not remain in the space SP.
  • the exposure apparatus EX can irradiate a desired position on the wafer W with the electron beam EB without being affected by the leakage magnetic field or regardless of the influence of the leakage magnetic field. As a result, deterioration of exposure accuracy due to the electron beam EB is appropriately suppressed.
  • the magnetic field generator 5 is embedded in the stage 22. However, at least a part of the magnetic field generator 5 may be exposed from the stage 22. For example, at least a part of the magnetic field generator 5 may be exposed to the holding region 221 from the stage 22. Alternatively, at least a part of the magnetic field generator 5 may be arranged on a member different from the stage 22 in the stage device 2. For example, at least a part of the magnetic field generator 5 may be disposed on the surface plate 21. Alternatively, at least a part of the magnetic field generator 5 may be disposed on a member different from the stage device 2.
  • At least a part of the magnetic field generator 5 is a transfer member (for example, a shuttle) capable of holding the wafer W in order to transfer the wafer W between the exposure apparatus EX and another apparatus or in the exposure apparatus EX. It may be arranged.
  • at least a part of the magnetic field generator 5 may be disposed on the bottom surface (or bottom wall) or side surface (or side wall) of the exposure chamber Ca.
  • at least a part of the magnetic field generator 5 may be disposed at an arbitrary position below the wafer W.
  • the coil 51Z may be a coil different from the Helmholtz type coil.
  • the coil 51Z may be any coil as long as the direction of the internal leakage magnetic field can be aligned with the Z-axis direction.
  • the shape, structure, arrangement position, and the like of the coil 51Z are not limited to the above-described specific examples.
  • the magnetic field generator 5 may include an arbitrary magnetic field generator for generating a canceling magnetic field capable of aligning the direction of the internal leakage magnetic field in the Z-axis direction in addition to or instead of the coil 51Z. .
  • the coil 52Y may be a coil different from the Helmholtz type coil.
  • the coil 52Y may be any coil as long as it can cancel the external leakage magnetic field.
  • the cancel magnetic field BY generated by the coil 52Y can cooperate with the cancel magnetic field BX to cancel the external leakage magnetic field
  • the shape, structure, arrangement position, and the like of the coil 52Y are not limited to the specific examples described above. .
  • the coil 52X may be a coil different from the Helmholtz type coil.
  • the coil 52X may be any coil as long as the external leakage magnetic field can be canceled.
  • the shape, structure, arrangement position, and the like of the coil 52X are not limited to the specific examples described above. .
  • the magnetic field generator 5 may include either one of the coils 52Y and 52X, but may not include any one of the coils 52Y and 52X.
  • the magnetic field generator 5 may include a coil for generating a canceling magnetic field that can cancel the external leakage magnetic field in addition to or instead of at least one of the coils 52Y and 52X.
  • the magnetic field generator 5 may include an arbitrary magnetic field generator for generating a cancel magnetic field capable of canceling the external leakage magnetic field in addition to or instead of at least one of the coils 52Y and 52X. .
  • the coil 51Z may generate a cancel magnetic field BZ in at least a part of a period in which the space SP (or the propagation path of the electron beam EB, hereinafter the same in this paragraph) is located immediately above the coil 51Z.
  • the coil 51Z may generate the cancel magnetic field BZ during at least a part of the period in which the electron beam optical system 12 is located immediately above the coil 51Z.
  • the coil 52Y may also generate the cancel magnetic field BY in at least a part of the period in which the space SP is located immediately above the coil 52Y, similarly to the coil 51Z.
  • the coil 52X may generate the cancel magnetic field BX in at least a part of the period in which the space SP is located immediately above the coil 52X.
  • the coil 51Z has a canceling magnetic field in at least a part of a period in which the space SP (or the propagation path of the electron beam EB, hereinafter the same in this paragraph) is located at the first specific position affected by the canceling magnetic field BZ generated by the coil 51Z.
  • BZ may be generated.
  • the coil 51Z may generate the cancel magnetic field BZ in at least a part of the period in which the electron beam optical system 12 is located at the first specific position or immediately above the first specific position.
  • the coil 52Y may generate the cancel magnetic field BY in at least a part of the period in which the space SP is located at the second specific position where the influence of the cancel magnetic field BY generated by the coil 52Y is affected, similarly to the coil 51Z.
  • the coil 52X may generate the cancel magnetic field BX in at least a part of the period in which the space SP is located at the third specific position affected by the cancel magnetic field BX generated by the coil 52X.
  • the magnetic field generator 5 cancels in different spaces on the wafer W (spaces that do not overlap or partially overlap each other).
  • a plurality of coils 51Z capable of generating the magnetic field BZ may be included. In this case, during a period in which the space SP is located at a certain position on the wafer W, at least one coil 51Z capable of generating the cancel magnetic field BZ in the space SP among the plurality of coils 51Z generates the cancel magnetic field BZ. May be.
  • the coil 51Z capable of generating the canceling magnetic field BZ in the space SP located at a certain position on the wafer W is typically the coil 51Z located immediately below the electron beam optical system 12.
  • At least one coil 51Z located immediately below the electron beam optical system 12 among the plurality of coils 51Z may generate the cancel magnetic field BZ.
  • the coil 51Z-1 when the coil 51Z located immediately below the electron beam optical system 12 is the coil 51Z-1, the coil 51Z-1 may generate the cancel magnetic field BZ.
  • the coil 51Z located immediately below the electron beam optical system 12 is changed from the coil 51Z-1 to the coil 51Z-2 with the movement of the stage 22, as shown in FIG. -2 may generate a canceling magnetic field BZ.
  • the coil 51Z located immediately below the electron beam optical system 12 is changed from the coil 51Z-2 to the coil 51Z-3 in accordance with the movement of the stage 22, as shown in FIG.
  • the cancel magnetic field BZ is generated from all of the coils 51Z-1 to 51Z-3, and the magnitude relationship of the cancel magnetic field BZ generated from each coil is changed according to the relative position between the stage 22 and the electron beam optical system 12. You may do it.
  • the magnetic field generator 5 includes a plurality of coils 52Y that can generate cancel magnetic fields BY in different spaces on the wafer W, respectively. You may go out.
  • at least one coil 52Y capable of generating the cancel magnetic field BY in the space SP among the plurality of coils 52Y generates the cancel magnetic field BY. May be.
  • the coil 52Y-1 may generate the cancel magnetic field BY.
  • the magnetic field generator 5 may include a plurality of coils 52X capable of generating canceling magnetic fields BX in different spaces on the wafer W, respectively.
  • the cancellation magnetic field BZ that suppresses the influence of the internal leakage magnetic field and the cancellation magnetic fields BY and BX that suppress the influence of the external leakage magnetic field can be distinguished mainly from the direction of the magnetic field. That is, the magnetic field generator 5 can generate a cancel magnetic field in the first direction that can suppress the influence of the internal leakage magnetic field and a cancel magnetic field in the second direction that can suppress the influence of the external leakage magnetic field.
  • the cancel magnetic field BZ and the cancel magnetic fields BY and BX may be distinguishable from arbitrary characteristics (for example, strength, magnetic flux density, polarity, etc.) different from the direction of the magnetic field.
  • the magnetic field generator 5 has a cancel magnetic field having a first characteristic capable of suppressing the influence of the internal leakage magnetic field, and a second characteristic capable of suppressing the influence of the external leakage magnetic field ( ⁇ first characteristic). It is possible to generate a cancellation magnetic field having
  • the exposure apparatus EXa of the first modification differs from the above-described exposure apparatus EX in which the magnetic field generator 5 is disposed below the wafer W in that the magnetic field generator 5 is disposed above the wafer W. .
  • the other components included in the exposure apparatus EXa of the first modification are the same as the other components included in the exposure apparatus EX described above. Therefore, hereinafter, the arrangement position of the magnetic field generator 5 in the first modification will be described with reference to FIGS. 14 and 15.
  • FIG. 14 is a cross-sectional view showing a cross section (a cross section including the optical axis AX) of the electron beam irradiation apparatus 1 and the stage apparatus 2 provided in the exposure apparatus EXa of the first modification.
  • FIG. 15A is a cross-sectional view showing a partial cross-section (specifically, a cross-section along the YZ plane) of the magnetic field generator 5 of the first modification, and
  • FIG. It is a top view which shows the upper surface of the support member 6a by which the magnetic field generator 5 of a modification is arrange
  • the exposure apparatus EXa includes a support member 6a.
  • the support member 6a is disposed in a vacuum space below the electron beam optical system 12 (that is, on the ⁇ Z side and on the emission side of the electron beam EB) and above the stage device 2 (that is, on the + Z side).
  • the That is, the support member 6 a is disposed between the electron beam optical system 12 and the stage apparatus 2.
  • the support member 6a is disposed above the wafer W. At least a part of the support member 6a may be disposed in a space SP between the electron beam optical system 12 and the stage apparatus 2 (or the wafer W).
  • the support member 6a is supported in a state of being suspended from the metrology frame 13 via the attachment member 61a.
  • the support member 6a is strong enough to maintain a predetermined flatness while being suspended by the attachment member 61a.
  • the support member 6a is a member for supporting the magnetic field generator 5 (in other words, the magnetic field generator 5 is disposed).
  • the support member 6a is a plate-like member.
  • the support member 6a is a member whose shape on the XY plane is a rectangle (for example, a square).
  • the support member 6a may be a member whose shape on the XY plane is an arbitrary shape (for example, a circle, an ellipse, or a rectangle).
  • an opening 62a penetrating the support member 6a along the Z-axis direction is formed.
  • the shape of the opening 62a on the XY plane is circular, but may be other shapes (for example, a rectangle or the like).
  • the size of the opening 62a on the XY plane is larger than the size of the region on the wafer W irradiated with the electron beam EB (that is, the irradiation region EA).
  • the support member 6 a is aligned with the electron beam optical system 12 so that the opening 62 a is disposed on the optical axis AX of the electron beam optical system 12. For this reason, the electron beam EB emitted from the electron beam optical system 12 is irradiated to the irradiation area EA on the wafer W after passing through the opening 62a.
  • the magnetic field generator 5 is disposed on the support member 6a.
  • a magnetic field generator 5 is embedded in the support member 6a.
  • the coil 51Z is arranged so that the optical axis AX coincides with the central axis of each of the coils 511Z and 512Z (or the optical axis AX passes through the inside of each of the coils 511Z and 512Z). That is, the coils 511Z and 512Z are arranged around the opening 62a so as to surround the opening 62a.
  • the coil 52Y is disposed so that the optical axis AX passes between the coil 521Y and the coil 522Y. That is, the coils 521Y and 522Y are arranged around the opening 62a so as to sandwich the opening 62a.
  • the coil 52X is arranged so that the optical axis AX passes between the coil 521X and the coil 522X. That is, the coils 521X and 522X are arranged around the opening 62a so as to sandwich the opening 62a.
  • the exposure apparatus EXa of the first modification Even with the exposure apparatus EXa of the first modification, it is possible to appropriately enjoy the effects that can be enjoyed by the exposure apparatus EX described above.
  • the first modification even if the stage 22 moves, the positional relationship between the magnetic field generator 5 and the space SP (or the propagation path of the electron beam EB) does not change. For this reason, even when the stage 22 moves, the magnetic field generator 5 can generate a cancel magnetic field in the space SP. Therefore, even when the stage 22 moves, the deterioration of exposure accuracy due to the leakage magnetic field is appropriately suppressed.
  • the magnetic field generator 5 is embedded in the support member 6a. However, at least a part of the magnetic field generator 5 may be exposed from the support member 6a. Alternatively, at least a part of the magnetic field generator 5 may be disposed on a member different from the support member 6a. For example, at least a part of the magnetic field generator 5 may be disposed in the metrology frame 13. For example, at least a part of the magnetic field generator 5 may be disposed on the upper surface (or upper wall) or side surface (or side wall) of the exposure chamber Ca. Alternatively, at least a part of the magnetic field generator 5 may be disposed at an arbitrary position above the wafer W. Alternatively, at least a part of the magnetic field generator 5 may be arranged at an arbitrary position on the XY plane where the wafer W is located.
  • the shape of the support member 6a described above is an example. Therefore, the support member 6a may have an arbitrary shape that can support the magnetic field generator 54 and does not shield the electron beam EB (in other words, not positioned on the propagation path of the electron beam EB). .
  • the exposure apparatus EXb of the second modified example mainly suppresses the influence of the external leakage magnetic field while the coil 51Z for mainly suppressing the influence of the internal leakage magnetic field is disposed on the support member 6a.
  • the coils 52Y and 52X for this purpose are arranged on the stage 22.
  • the coil 52X is omitted in FIG.
  • Other components included in the exposure apparatus EXb of the second modification are the same as other components included in the exposure apparatus EXa of the first modification described above. Even with the exposure apparatus EXb of the second modification, it is possible to appropriately enjoy the effects that can be enjoyed by the exposure apparatus EX described above.
  • an exposure apparatus EXc of the third modification will be described with reference to FIG.
  • the coils 52Y and 52X for mainly suppressing the influence of the external leakage magnetic field are disposed on the support member 6a, while the influence of the internal leakage magnetic field is mainly provided. It differs from the exposure apparatus EXa of the first modified example described above in that the coil 51Z for suppression is disposed on the stage 22.
  • the coil 52X is omitted in FIG.
  • Other components included in the exposure apparatus EXc of the third modification are the same as other components included in the exposure apparatus EXa of the first modification described above. Even with such an exposure apparatus EXc of the third modification, it is possible to appropriately enjoy the effects that the above-described exposure apparatus EX can enjoy.
  • the exposure apparatus EX of the fourth modification example is that the coil 51Z, the coil 52Y, and the coil 52X are physically (or electrically) integrated, so that the coil 51Z and the coil 51X are integrated. This is different from the above-described exposure apparatus EX in which 52Y and the coil 52X are physically (or electrically) separated.
  • the magnetic field generator 5d of the fourth modified example is composed of a series of windings.
  • a part of the series of windings constituting the magnetic field generator 5d is mainly used as a coil portion (that is, the coil 51Z) capable of generating a canceling magnetic field for suppressing the influence of the internal leakage magnetic field.
  • Another part of the series of windings constituting the magnetic field generator 5d is used as a coil portion (that is, coils 52Y and 52X) that can generate a canceling magnetic field for mainly suppressing the influence of the external leakage magnetic field.
  • the other one of the coil 51Z, the coil 52Y and the coil 52X may be separated.
  • the coil 51Z, the coil 52Y, and a part of the coil 52X may be integrated while the other part of the coil 51Z, the coil 52Y, and the coil 52X may be separated.
  • an exposure apparatus EXe of a fifth modified example will be described with reference to FIGS. 19 (a) to 19 (b) and FIGS. 20 (a) to 20 (c). To do. As shown in FIGS. 19 (a) to 19 (b), the exposure apparatus EXe of the fifth modified example replaces the magnetic field generator 5 including the coil 51Z, the coil 52Y, and the coil 52X with a magnet 53Z, a magnet 54Y, and The exposure apparatus EX is different from the above-described exposure apparatus EX in that it includes a magnetic field generator 5e including a magnet 54X. Other components included in the exposure apparatus EXe of the fifth modification are the same as other components included in the exposure apparatus EX described above.
  • the magnet 53Z can generate a magnetic field similar to the cancel magnetic field BZ generated by the coil 51Z as a cancel magnetic field. For this reason, the magnet 53Z is arranged so that the two magnetic poles included in the magnet 53Z are aligned along the Z-axis.
  • the magnet 54Y can generate a magnetic field similar to the cancel magnetic field BY generated by the coil 52Y described above as a cancel magnetic field. For this reason, the magnet 54Y is disposed such that two magnetic poles included in the magnet 54Y are aligned along the Y axis.
  • the magnet 54X can generate a magnetic field similar to the cancel magnetic field BX generated by the coil 52X described above as a cancel magnetic field. For this reason, the magnet 54X is arranged so that the two magnetic poles included in the magnet 54X are aligned along the X axis.
  • the magnetic field generator 5e may include a magnetic field adjustment mechanism for adjusting the characteristics (for example, direction and intensity) of the cancel magnetic field generated by the magnet 53Z.
  • the magnetic field generator 5e may include a temperature adjustment mechanism that can adjust the temperature of the magnet 53Z as the magnetic field adjustment mechanism.
  • the temperature adjustment mechanism can suppress the influence of the internal leakage magnetic field under the control of the control device 3 (specifically, as described above, the direction of the internal leakage magnetic field is aligned with the Z-axis direction).
  • the temperature of the magnet 53Z may be adjusted so that the magnet 53Z generates a simple canceling magnetic field.
  • the magnetic field generator 5e may include a magnetic field adjustment mechanism for adjusting the characteristics of the cancel magnetic field generated by the magnet 54Y.
  • the magnetic field generator 5e may include a magnetic field adjustment mechanism for adjusting the characteristics of the cancel magnetic field generated by the magnet 54X.
  • the temperature adjustment mechanism may be provided for cooling at least one of the coil 51Z, the coil 52Y, and the coil 52X in the other embodiments and modifications.
  • an exposure apparatus EXf of a sixth modification will be described with reference to FIG.
  • the exposure apparatus EXf of the sixth modified example is different from the above-described exposure apparatus EX in that it includes a magnetic field sensor 7f.
  • the other components included in the exposure apparatus EXf of the sixth modification are the same as the other components included in the exposure apparatus EX described above.
  • the magnetic field sensor 7f can measure a magnetic field (including a leakage magnetic field) in at least a part of the space SP between the electron beam optical system 12 and the wafer W.
  • the control device 3 can cancel the influence of the leakage magnetic field measured by the magnetic sensor 7f (or the leakage magnetic field in the space SP calculated from the measurement result of the magnetic field sensor 7f) based on the measurement result of the magnetic field sensor 7f.
  • the magnetic field generator 5 is controlled so as to generate a magnetic field. For this reason, the exposure apparatus EXf of the sixth modification can suppress the influence of the leakage magnetic field based on the actual measurement result of the leakage magnetic field, while enjoying the same effect as that which can be enjoyed by the exposure apparatus EX described above. Therefore, the influence of the leakage magnetic field can be suppressed more appropriately.
  • the control device 3 can suppress the influence of the estimated leakage magnetic field based on the estimation result of the leakage magnetic field in addition to or instead of the measurement result of the magnetic field sensor 7f (that is, the actual measurement result of the leakage magnetic field).
  • the magnetic field generator 5 may be controlled so as to generate a cancel magnetic field.
  • the control device 3 may estimate the leakage magnetic field.
  • the control device 3 may estimate the leakage magnetic field based on the operation state of the beam controller (for example, the above-described electromagnetic lens or deflector) included in the electron beam optical system 12 that is a generation source of the leakage magnetic field. Good.
  • the control device 3 generates a leakage magnetic field based on a drive current supplied to the beam controller for driving the beam controller included in the electron beam optical system 12 that is a generation source of the leakage magnetic field. It may be estimated.
  • the control device 3 may estimate the leakage magnetic field by learning the state of the leakage magnetic field based on the measurement result of the past magnetic field sensor 7f.
  • the control device 3 may accumulate the measurement results of the past magnetic field sensor 7f, and may estimate the leakage magnetic field by performing data mining or mathematical analysis prediction on the accumulated measurement results.
  • control device 3 may control the magnetic field generator 5 so as to generate a cancellation magnetic field that can suppress the influence of the leakage magnetic field without estimating the leakage magnetic field.
  • the control device 3 generates a cancel magnetic field that can suppress the influence of the leakage magnetic field based on the operation state of the beam controller included in the electron beam optical system 12 that is a generation source of the leakage magnetic field. May be controlled.
  • the control device 3 may control the magnetic field generator 5 based on the measurement result of the past magnetic field sensor 7f so as to generate a cancel magnetic field that can suppress the influence of the leakage magnetic field.
  • the control device 3 generates a cancel magnetic field that can suppress the influence of the leak magnetic field by learning the leak magnetic field under a situation in which the magnetic field generator 5 is actually generating the cancel magnetic field by machine learning or the like.
  • the magnetic field generator 5 may be controlled.
  • the control device 3 accumulates the measurement results of the past magnetic field sensor 7f, and can suppress the influence of the leakage magnetic field by performing data mining and mathematical analysis prediction on the accumulated measurement results.
  • the magnetic field generator 5 may be controlled so as to generate a canceling magnetic field.
  • the control device 3 generates a cancel magnetic field that can suppress the influence of the leakage magnetic field by performing data mining and mathematical analysis prediction on the operation parameters of the exposure apparatus EXf that can affect the cancel magnetic field.
  • the magnetic field generator 5 may be controlled.
  • the positional relationship between the magnetic field generator 5 and the space SP varies with the movement of the stage 22. For this reason, as the stage 22 moves, the influence of the cancellation magnetic field generated by the magnetic field generator 5 on the space SP also varies.
  • the canceling magnetic field is always constant (that is, a magnetic field that does not vary with the movement of the stage 22)
  • the canceling magnetic field appropriately affects the influence of the internal leakage magnetic field and the external leakage magnetic field generated in the space SP. There is a possibility that it cannot be suppressed.
  • the control device 3 may control the magnetic field generator 5 so as to generate a cancel magnetic field that can suppress the influence of the leakage magnetic field in accordance with the movement of the stage 22.
  • control device 3 may adjust the cancel magnetic field in accordance with the movement of the stage 22.
  • the control device 3 when the influence of the internal leakage magnetic field and the external leakage magnetic field generated in the space SP can be appropriately suppressed by the cancellation magnetic field without changing the cancellation magnetic field, the control device 3 generates the magnetic field in accordance with the movement of the stage 22.
  • the device 5 may not be controlled.
  • the exposure apparatus EXg according to the seventh modification has a single electron beam EB emitted from the electron beam irradiation apparatus 1 in that the electron beam irradiation apparatus 1g can irradiate a plurality of electron beams EB. This is different from the above-described exposure apparatus EX that can be irradiated. Furthermore, the exposure apparatus EXg of the seventh modification is different from the above-described exposure apparatus EX including the single magnetic field generator 5 in that it includes a plurality of magnetic field generators 5.
  • the other components included in the exposure apparatus EXg of the seventh modification are the same as the other components included in the exposure apparatus EX described above.
  • the electron beam irradiation apparatus 1g includes a plurality of electron beam optical systems 12.
  • the plurality of electron beam optical systems 12 are installed so as to have a predetermined positional relationship in the XY plane.
  • the plurality of electron beam optical systems 12 are arranged in a matrix in the XY plane.
  • the plurality of electron beam optical systems 12 may be arranged in an array (that is, in a line) in the XY plane.
  • the electron beam irradiation apparatus 1g may include a surface emission type electron beam source having an electron emission unit that emits the plurality of electron beams EB as the beam optical device 122. Good.
  • FIG. 23 is a plan view showing on the wafer W the irradiation positions (that is, the irradiation areas EA) of the plurality of electron beams EB and the arrangement positions of the plurality of electron beam optical systems 12. As shown in FIG.
  • the electron beam irradiation apparatus 1g can simultaneously irradiate a plurality of electron beams EB to a plurality of irradiation areas EA set on a plurality of shot areas S on the wafer W, respectively. . That is, the plurality of electron beam optical systems 12 can simultaneously irradiate the plurality of electron beams EB to the plurality of irradiation areas EA respectively set on the plurality of shot areas S on the wafer W. If the electron beam irradiation apparatus 1g irradiates the electron beam EB while moving the wafer W relative to the irradiation area EA, a plurality of shot areas S on the wafer W are exposed in parallel. As a result, a pattern smaller than the resolution limit of the exposure apparatus of the comparative example that exposes the wafer with ultraviolet light is formed in each shot region S with a relatively high throughput.
  • the number of shot regions S is not limited to the number shown in FIG.
  • FIG. 24A is a cross-sectional view showing a correspondence relationship between the plurality of magnetic field generators 5 and the plurality of electron beam optical systems 12 on the YZ plane in the seventh modification.
  • FIG. 24B is a plan view showing a correspondence relationship between the plurality of magnetic field generators 5 and the plurality of electron beam optical systems 12 on the XY plane in the seventh modification.
  • the exposure apparatus EXf includes N electron beam optical systems 12, it is assumed that the exposure apparatus EXf includes N magnetic field generators 5. Thereafter, the N electron beam optical systems 12 are referred to as an electron beam optical system 12 1 , an electron beam optical system 12 2 , an electron beam optical system 12 3 ,..., An electron beam optical system 12 N-1 and an electron beam optical system. 12 N to distinguish from each other.
  • the exposure apparatus EX includes a magnetic field generator 5 1 corresponding to the electron beam optical system 12 1, and the magnetic field generator 5 2 corresponding to the electron beam optical system 12 2, a magnetic field corresponding to the electron beam optical system 12 3 a generator 5 3, ..., and a magnetic field generator 5 N-1 corresponding to the electron beam optical system 12 N-1, and a magnetic field generator 5 N corresponding to the electron beam optical system 12 N.
  • the exposure apparatus EXf is not limited to being provided with the N magnetic field generators 5.
  • the magnetic field generator 5 k (where, k is an integer satisfying 1 ⁇ k ⁇ N) includes a coil 51Z k, and the coil 52Y k, coils 52X k .
  • the coil 52X k is not shown.
  • Structure of coil 51Z k is identical to the structure of the coil 51Z as described above
  • the structure of the coil 52Y k is identical to the structure of the coil 52Y as described above
  • the structure of the coil 52X k is the same as the structure of the coil 52X as described above .
  • the magnetic field generator 5 k is capable of generating cancellation magnetic field in a space SP k between the primary electron beam optical system 12 k and the wafer W corresponding to the magnetic field generator 5 k.
  • the magnetic field generator 5 1 can generate a cancellation magnetic field in a space SP 1 between the primary electron beam optical system 12 1 and the wafer W corresponding to the magnetic field generator 5 1.
  • the magnetic field generator 5 2 is capable of generating cancellation magnetic field in a space SP 2 between the one electron beam optical system 12 2 and the wafer W corresponding to the magnetic field generator 5 2.
  • the coil 51Z k can generate a cancel magnetic field BZ in the space SP k .
  • Coil 51Z k is primarily a cancellation magnetic field BZ in order to suppress the influence of the internal leakage magnetic field leaking to the space SP k from the interior of the electron beam optical system 12 k can be generated.
  • the coil 51Z k is capable of generating canceling magnetic field BZ capable to align the direction of the internal leakage magnetic field leaking to the space SP k in Z-axis direction.
  • the coil 52Y k can generate a cancel magnetic field BY in the space SP k .
  • the coil 52Y k is aligned with respect to the electron beam optical system 12 k Good.
  • Coil 52Y k is primarily a cancellation magnetic field BY for suppressing the influence of an external leakage magnetic field leaking to the space SP k from the outside of the electron beam optical system 12 k can be generated.
  • the coil 52Y k in cooperation with the cancel magnetic field BX coil 52X k occurs, it is possible to generate a cancellation magnetic field BY capable of canceling the external leakage magnetic field leaking to the space SP k.
  • the coil 52X k can generate a cancel magnetic field BX in the space SP k .
  • coil 52X k can mainly generate a cancel magnetic field BX for suppressing the influence of the external leakage magnetic field leaking from the outside of the electron beam optical system 12k to the space SP k .
  • the coil 52X k in cooperation with the cancel magnetic field BY the coil 52Y k occurs, it is possible to generate a cancellation magnetic field BX capable of canceling the external leakage magnetic field leaking to the space SP k.
  • the external leakage magnetic field leaking from the outside of the electron beam optical system 12 k to the space SP k is added to the electron beam optical system 12 k in addition to the external leakage magnetic field described above with reference to FIG. other electron beam optical system 12 other than (that is, from the electron beam optical system 12 1 from the electron beam optical system 12 k-1 and the electron beam optical system 12 k + 1 electron beam optical system 12 N) leaking into the space SP k from the interior of the Including the magnetic field.
  • the coil 52Y k and 52X k is leaking from the electron beam optical system 12 1 from the electron beam optical system 12 k-1 and the electron beam optical system 12 k + 1 to the space SP k from the interior of the electron beam optical system 12 N
  • a cancel magnetic field that can suppress the influence of an external leakage magnetic field including a magnetic field is generated.
  • the coils 52Y 1 and 52X 1 generates a cancellation magnetic field that can suppress the influence of external leakage magnetic field including a magnetic field leaked to the space SP 1 from the electron beam optical system 12 2 from the interior of the electron beam optical system 12 N .
  • the coils 52Y 2 and 52X 2 suppress the influence of an external leakage magnetic field including a magnetic field leaking from the electron beam optical system 12 1 and the electron beam optical system 12 3 into the space SP 2 from the inside of the electron beam optical system 12 N. Generate possible canceling magnetic field.
  • Such an exposure apparatus EXg of the seventh modified example does not receive the influence of the leakage magnetic field generated accompanying the irradiation of the plurality of electron beams EB or regardless of the influence of the leakage magnetic field, A desired position on the wafer W can be irradiated. As a result, deterioration of exposure accuracy due to the plurality of electron beams EB is appropriately suppressed. That is, even when the exposure apparatus EXg irradiates a plurality of electron beams EB, the effects that can be enjoyed by the exposure apparatus EX can be appropriately enjoyed.
  • the two magnetic field generators 5 adjacent to each other on the XY plane may cancel each other because the directions of the magnetic fields generated from the coils 52Y and the coils 52X are opposite to each other.
  • Two adjacent magnetic field generators 5 on the XY plane may share at least a part of the coil 51Z, the coil 52Y, and the coil 52X. That is, the two magnetic field generators 5 adjacent on the XY plane may include coils that can be shared with each other. In other words, at least a part of the coil 51Z, the coil 52Y, and the coil 52X included in the two magnetic field generators 5 adjacent to each other on the XY plane may be integrated. That is, the coil contained in common with two adjacent magnetic field generators 5 may be arrange
  • the two magnetic field generators 5 adjacent along the X axis may share at least a part of the two coils 52X adjacent along the X axis.
  • a coil shared by the two magnetic field generators 5 adjacent to each other along the X axis may be arranged. Specifically, in the example shown in FIG. 24 (b) from FIG.
  • the magnetic field generator 5 1 utilizing and magnetic field generator 5 4 as a coil 522X may be arranged a single coil to be used as a coil 521X.
  • the two magnetic field generators 5 adjacent along the Y axis may share at least a part of the two coils 52Y adjacent along the Y axis.
  • a coil shared by two magnetic field generators 5 adjacent to each other along the Y axis may be disposed. Specifically, in the example shown in FIG. 24 (b) from FIG.
  • the magnetic field generator 5 1 and the magnetic field generator 5 2 utilized is as the coil 522Y may be arranged a single coil to be used as a coil 521Y.
  • an exposure apparatus EXh according to an eighth modification will be described.
  • one magnetic field generator 5 is associated with one electron beam optical system 12 in that one magnetic field generator 5 is associated with two or more adjacent electron beam optical systems 12.
  • Other components included in the exposure apparatus EXh according to the eighth modification are the same as those included in the exposure apparatus EXg according to the seventh modification described above.
  • the correspondence between the plurality of magnetic field generators 5 and the plurality of electron beam optical systems 12 will be described with reference to FIGS. 25 (a) to 25 (b).
  • FIG. 25A is a cross-sectional view showing the correspondence relationship between the plurality of magnetic field generators 5 and the plurality of electron beam optical systems 12 on the YZ plane in the eighth modification.
  • FIG. 25B is a plan view showing a correspondence relationship between the plurality of magnetic field generators 5 and the plurality of electron beam optical systems 12 on the XY plane in the eighth modification.
  • one magnetic field generator 5 is associated with four adjacent electron beam optical systems 12 in a 2 ⁇ 2 matrix arrangement pattern on the XY plane.
  • one magnetic field generator 5 may be associated with three or less or five or more electron beam optical systems 12.
  • the exposure apparatus EXf are N electron beam optical system 12 (that is, from the electron beam optical system 12 1 electron beam optical system 12 N) shall have a.
  • the arrangement order of the N electron beam optical systems 12 in the eighth modified example on the XY plane is N electron beam optical systems 12 in the seventh modified example.
  • the order of arrangement on the XY plane is different.
  • the exposure apparatus EX the magnetic field generator corresponding to the magnetic field generator 5 p1 corresponding of four electron beam optical system 12 1 adjacent to 12 4, the four electron beam optical system 12 5 adjacent to 12 8 5 p2 ...
  • a magnetic field generator 5 pn corresponding to the electron beam optical system 12 N from four adjacent electron beam optical systems 12 N-3 (where n is an integer equal to or greater than N / 4). ing. However, at least one of the magnetic field generators 5 p1 to 5 pn may correspond to three or less electron beam optical systems 12.
  • the magnetic field generator 5 pm (where, m is 1 integer satisfying ⁇ k ⁇ n) includes a coil 51Z pm, the coil 52Y pm, coils 52X pm .
  • the coil 52X pm is not shown in FIG.
  • Structure of coil 51Z pm is identical to the structure of the coil 51Z as described above
  • the structure of the coil 52Y pm is identical to the structure of the coil 52Y as described above
  • the structure of the coil 52X pm is the same as the structure of the coil 52X as described above .
  • the coils 511Z and 512Z are included in the coil 51Z pm, in the XY plane, and has a size that can contain the optical axis AX of the four electron beam optical system 12 corresponding to the coil 51Z pm.
  • the coils 521Y and 522Y included in the coil 52Y pm have a size capable of sandwiching the optical axes AX of the four electron beam optical systems 12 corresponding to the coils 52Y pm on the XY plane.
  • the magnetic field generator 5 pm can generate a cancel magnetic field in the space SP pm including the space SP between each of the four electron beam optical systems 12 corresponding to the magnetic field generator 5 pm and the wafer W.
  • the magnetic field generator 5 P1 includes a space SP 1 between the electron beam optical system 12 1 and the wafer W, a space SP 2 between the electron beam optical system 12 2 and the wafer W, and an electron beam optical system 12 3 . It is possible to generate a cancellation magnetic field in a space SP P1 containing space SP 4 between the space SP 3 and the electron beam optical system 12 4 and the wafer W between the wafer W.
  • the magnetic field generator 5 P2 is space SP 5 between electron beam optical system 12 5 and the wafer W, a space SP 6, the electron beam optical system 12 7 between the electron beam optical system 12 6 and the wafer W it is possible to generate a cancellation magnetic field in a space SP P2 containing space SP 8 between the space SP 7 and the electron beam optical system 12 8 and the wafer W between the wafer W.
  • the coil 51Z pm can generate a cancel magnetic field BZ in the space SP pm .
  • the coil 51Z pm is connected to the coil 51Z pm so that the optical axes AX of the four electron beam optical systems 12 corresponding to the coils 51Z pm pass through the inner sides of the coils 511Z and 512Z included in the coil 51Z pm.
  • the coil 51Z pm can mainly generate a cancel magnetic field BZ for suppressing the influence of the internal leakage magnetic field leaking from the inside of the four electron beam optical systems 12 corresponding to the coil 51Z pm to the space SP pm . That is, the coil 51Z pm can generate a cancel magnetic field BZ that can align the direction of the internal leakage magnetic field leaking into the space SP pm in the Z-axis direction.
  • the coil 52Y pm can generate a cancel magnetic field BY in the space SP pm .
  • the coil 52Y pm is, corresponding to the coil 52Y pm
  • the four electron beam optical systems 12 may be aligned.
  • the coil 52Y pm can mainly generate a cancel magnetic field BY for suppressing the influence of the external leakage magnetic field leaking from the outside of the four electron beam optical systems 12 corresponding to the coil 52Y pm to the space SP pm .
  • the coil 52Y pm in cooperation with the cancel magnetic field BX coil 52X pm occurs, it is possible to generate a cancellation magnetic field BY capable of canceling the external leakage magnetic field leaking to the space SP pm.
  • the coil 52X pm can generate a cancel magnetic field BX in the space SP pm .
  • the coil 52X pm is, corresponding to the coil 52X pm
  • the four electron beam optical systems 12 may be aligned.
  • the coil 52X pm can mainly generate a cancel magnetic field BY for suppressing the influence of the external leakage magnetic field leaking from the outside of the four electron beam optical systems 12 corresponding to the coil 52X pm to the space SP pm .
  • the coil 52X pm in cooperation with the cancel magnetic field BY the coil 52Y pm occurs, it is possible to generate a cancellation magnetic field BX capable of canceling the external leakage magnetic field leaking to the space SP pm.
  • the external leakage magnetic field leaking from the outside of the four electron beam optical systems 12 into the space SP pm is not limited to the external leakage magnetic field described above with reference to FIG.
  • a magnetic field leaking into the space SP pm from the inside of the electron beam optical system 12 other than the system 12 is also included.
  • the coils 52Y pm and 52X pm have an external magnetic field that leaks into the space SP pm from the inside of the electron beam optical system 12 other than the four electron beam optical systems 12 corresponding to the coils 52Y pm and 52X pm.
  • a cancel magnetic field that can suppress the influence of the leakage magnetic field is generated.
  • the coil 52Y p1 and 52X p1 generates a cancellation magnetic field that can suppress the influence of external leakage magnetic field including a magnetic field leaked to the space SP p1 from the electron beam optical system 12 5 from the interior of the electron beam optical system 12 N .
  • the coil 52Y p2 and 52X p2 includes a magnetic field leaked to the space SP p2 from the electron beam optical system 12 1 from the electron beam optical system 12 4, and the electron beam optical system 12 9 from the interior of the electron beam optical system 12 N A cancel magnetic field that can suppress the influence of an external leakage magnetic field is generated.
  • Such an exposure apparatus EXh of the eighth modified example does not receive the influence of the leakage magnetic field generated accompanying irradiation of the plurality of electron beams EB or regardless of the influence of the leakage magnetic field, A desired position on the wafer W can be irradiated. As a result, deterioration of exposure accuracy due to the plurality of electron beams EB is appropriately suppressed. That is, even when the exposure apparatus EXh irradiates a plurality of electron beams EB, the effects that can be enjoyed by the exposure apparatus EX described above can be appropriately enjoyed.
  • the exposure apparatus EX is an exposure apparatus that exposes the wafer W by irradiating the wafer W with the electron beam EB.
  • the exposure apparatus EX may be an exposure apparatus that exposes the wafer W by irradiating the wafer W with an arbitrary charged particle beam (for example, an ion beam) different from the electron beam EB.
  • the exposure apparatus EX is a single beam type exposure apparatus in which the electron beam optical system 12 draws or transfers a pattern on the wafer W using a single electron beam EB.
  • the exposure apparatus EX may be a variable shaping type exposure apparatus that shapes the cross section of the electron beam EB irradiated to the wafer W by the electron beam optical system 12 into a variable size rectangle.
  • the exposure apparatus EX may be a point beam type exposure apparatus in which the electron beam optical system 12 irradiates the wafer W with a spot-shaped electron beam EB.
  • the exposure apparatus EX may be a stencil mask type exposure apparatus in which the electron beam optical system 12 shapes the electron beam EB into a desired shape using a stencil mask in which a beam passage hole having a desired shape is formed.
  • the exposure apparatus EX may be a multi-beam type exposure apparatus in which the electron beam optical system 12 draws or transfers a pattern on the wafer W using a plurality of electron beams.
  • the exposure apparatus EX generates a plurality of electron beams via a blanking aperture array having a plurality of openings, and individually turns on / off the plurality of electron beams according to the drawing pattern, thereby drawing the pattern on the wafer W.
  • An exposure apparatus may be used.
  • the exposure apparatus EX may be an exposure apparatus that includes a surface emission type electron beam source having a plurality of electron emission portions from which the electron beam optical system 12 emits a plurality of electron beams.
  • the exposure apparatus EX may be a batch transfer type exposure apparatus that collectively transfers a pattern of one semiconductor chip or a plurality of semiconductor chip patterns from a mask to the wafer W.
  • the exposure apparatus EX may be a split transfer type exposure apparatus capable of performing exposure with higher throughput than the batch transfer type.
  • the division transfer type exposure apparatus divides a pattern to be transferred onto the wafer W into a plurality of small areas smaller than the size corresponding to one shot area S on the mask, and the plurality of small area patterns are formed on the wafer W. Transcript.
  • an electron beam EB is irradiated to a certain area of a mask having a pattern of one semiconductor chip, and an image of the pattern in the area irradiated with the electron beam EB is projected with a projection lens.
  • a reduction transfer type exposure apparatus that performs reduction transfer.
  • the exposure apparatus EX may be a scanning stepper.
  • the exposure apparatus EX may be a stationary exposure apparatus such as a stepper.
  • the exposure apparatus EX may be a step-and-stitch type reduction projection exposure apparatus that synthesizes at least a part of one shot area S and at least a part of another shot area S.
  • the exposure target of the exposure apparatus EX is a semiconductor substrate (that is, the wafer W) for manufacturing a semiconductor device.
  • the exposure target of the exposure apparatus EX may be an arbitrary substrate (or an arbitrary object).
  • the exposure apparatus EX may be an exposure apparatus for manufacturing an organic EL, a thin film magnetic head, an image sensor (CCD or the like), a micromachine, or a DNA chip.
  • the exposure apparatus EX may be an exposure apparatus for drawing a mask pattern on a square glass plate or a silicon wafer.
  • a device such as a semiconductor device may be manufactured through the steps shown in FIG.
  • the steps for manufacturing the device are step S201 for designing the function and performance of the device, step S202 for generating an exposure pattern based on the function and performance design (that is, an exposure pattern by the electron beam EB), and a substrate of the device.
  • Step S203 for manufacturing the wafer W Step S204 for exposing the wafer W using the electron beam EB corresponding to the generated exposure pattern and developing the exposed wafer W, device assembly processing (dicing processing, bonding processing, package processing)
  • Step S205 including a processing process such as the above and step S206 for inspecting a device may be included.
  • EX exposure apparatus W wafer EB electron beam EA irradiation area S shot area 1 electron beam irradiation apparatus 11 barrel 12 electron beam optical system 13 metrology frame 2 stage apparatus 21 surface plate 22 stage 3 control apparatus 5 magnetic field generator 51Z, 511Z, 512Z Coil 52Y, 521Y, 522Y Coil 52X, 521X, 522X Coil 53Z, 54Y, 54X Magnet 6a Support member 7f Magnetic field sensor

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Cet appareil d'exposition EX est pourvu : d'un système optique de faisceau (12) qui est capable d'irradier un objet (W) avec un faisceau de particules chargées (EB (AX)) ; de premiers appareils de génération de champ magnétique (51Z) qui génèrent un champ magnétique ayant une première caractéristique dans un espace (SP) entre le système optique de faisceau (12) et l'objet (W) ; et de seconds appareils de génération de champ magnétique (52X, 52Y) qui génèrent un champ magnétique ayant une seconde caractéristique dans l'espace entre le système optique de faisceau (12) et l'objet (W).
PCT/JP2017/016524 2017-04-26 2017-04-26 Appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif WO2018198222A1 (fr)

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TW107108377A TW201907233A (zh) 2017-04-26 2018-03-13 曝光裝置、曝光方法、及元件製造方法

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WO2020210183A1 (fr) * 2019-04-08 2020-10-15 Technical Manufacturing Corporation Système de suppression à champ magnétique

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JPH05182789A (ja) * 1991-12-27 1993-07-23 Ishikawajima Harima Heavy Ind Co Ltd ウィグラー
JP2000357648A (ja) * 1999-06-15 2000-12-26 Nec Corp 転写露光装置
JP2003068603A (ja) * 2001-08-23 2003-03-07 Nikon Corp 荷電粒子線露光装置
JP2003332781A (ja) * 2002-05-16 2003-11-21 Tokkyokiki Corp アクティブ磁場キャンセラ
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US12293861B2 (en) 2019-04-08 2025-05-06 Technical Manufacturing Corporation Magnetic field suppression system

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