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WO2008136124A1 - Amplifier - Google Patents

Amplifier Download PDF

Info

Publication number
WO2008136124A1
WO2008136124A1 PCT/JP2007/059110 JP2007059110W WO2008136124A1 WO 2008136124 A1 WO2008136124 A1 WO 2008136124A1 JP 2007059110 W JP2007059110 W JP 2007059110W WO 2008136124 A1 WO2008136124 A1 WO 2008136124A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
unit
bias control
transistor
gate
Prior art date
Application number
PCT/JP2007/059110
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuhiro Uchiyama
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2009512854A priority Critical patent/JPWO2008136124A1/en
Priority to PCT/JP2007/059110 priority patent/WO2008136124A1/en
Publication of WO2008136124A1 publication Critical patent/WO2008136124A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/228—A measuring circuit being coupled to the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/462—Indexing scheme relating to amplifiers the current being sensed

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

An amplifier (100) having an improved gain includes a high frequency amplifying unit (120) which includes a field-effect transistor (121) composed of a compound semiconductor, a current detection unit (140) which detects a gate current of the transistor (121), a bias control unit (150) which controls the gate bias of the transistor (121) according to the detected gate current. The compound semiconductor can be e.g., GaAs (gallium arsenide) or GaN (gallium nitride). Thereby, since an operational state of an amplifier unit can be checked by the gate current, it is not necessary to input a part of an RF signal into the current detection unit(140) and the bias control unit (150) that are bias control means, unlike conventional ways. Therefore, the state of an amplifier unit can be checked without causing an RF signal loss. As a result, the gain of the amplifier (100) can be improved compared to conventional amplifiers.
PCT/JP2007/059110 2007-04-26 2007-04-26 Amplifier WO2008136124A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009512854A JPWO2008136124A1 (en) 2007-04-26 2007-04-26 amplifier
PCT/JP2007/059110 WO2008136124A1 (en) 2007-04-26 2007-04-26 Amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/059110 WO2008136124A1 (en) 2007-04-26 2007-04-26 Amplifier

Publications (1)

Publication Number Publication Date
WO2008136124A1 true WO2008136124A1 (en) 2008-11-13

Family

ID=39943246

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/059110 WO2008136124A1 (en) 2007-04-26 2007-04-26 Amplifier

Country Status (2)

Country Link
JP (1) JPWO2008136124A1 (en)
WO (1) WO2008136124A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012105263A (en) * 2010-11-05 2012-05-31 Pohang Univ Of Science & Technology Academy-Industry Cooperation 3-way doherty power amplifier using driving amplifier
CN102761310A (en) * 2011-04-29 2012-10-31 中兴通讯股份有限公司 Doherty power amplifier and implementation method thereof
EP2541759A4 (en) * 2011-04-29 2014-10-29 Zte Corp Doherty power amplifier and implementation method therefor
JP2015027084A (en) * 2013-07-29 2015-02-05 フリースケール セミコンダクター インコーポレイテッド Switch mode amplifier
WO2015121891A1 (en) * 2014-02-13 2015-08-20 三菱電機株式会社 Amplifier

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02149108A (en) * 1988-11-30 1990-06-07 Nec Corp Gate voltage control circuit
JPH05235670A (en) * 1992-02-03 1993-09-10 Nec Corp Power amplifier
JPH07283656A (en) * 1994-04-13 1995-10-27 Nec Corp Power amplification circuit
JP2000068753A (en) * 1998-08-19 2000-03-03 Ntt Mobil Communication Network Inc Transmission amplifier
JP2002100935A (en) * 2000-09-21 2002-04-05 Matsushita Electric Ind Co Ltd Power amplifying apparatus and method
JP2006165856A (en) * 2004-12-06 2006-06-22 Hitachi Kokusai Electric Inc Amplifier
JP2006191590A (en) * 2004-12-31 2006-07-20 Pohang Eng College Power amplifying apparatus using asymmetric power drive
JP2007053540A (en) * 2005-08-17 2007-03-01 Nec Corp Doherty-type amplifier

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02149108A (en) * 1988-11-30 1990-06-07 Nec Corp Gate voltage control circuit
JPH05235670A (en) * 1992-02-03 1993-09-10 Nec Corp Power amplifier
JPH07283656A (en) * 1994-04-13 1995-10-27 Nec Corp Power amplification circuit
JP2000068753A (en) * 1998-08-19 2000-03-03 Ntt Mobil Communication Network Inc Transmission amplifier
JP2002100935A (en) * 2000-09-21 2002-04-05 Matsushita Electric Ind Co Ltd Power amplifying apparatus and method
JP2006165856A (en) * 2004-12-06 2006-06-22 Hitachi Kokusai Electric Inc Amplifier
JP2006191590A (en) * 2004-12-31 2006-07-20 Pohang Eng College Power amplifying apparatus using asymmetric power drive
JP2007053540A (en) * 2005-08-17 2007-03-01 Nec Corp Doherty-type amplifier

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012105263A (en) * 2010-11-05 2012-05-31 Pohang Univ Of Science & Technology Academy-Industry Cooperation 3-way doherty power amplifier using driving amplifier
CN102761310A (en) * 2011-04-29 2012-10-31 中兴通讯股份有限公司 Doherty power amplifier and implementation method thereof
EP2538549A4 (en) * 2011-04-29 2014-03-05 Zte Corp Doherty power amplifier and implementation method therefor
US8773205B2 (en) 2011-04-29 2014-07-08 Zte Corporation Doherty power amplifier and implementation method thereof
EP2541759A4 (en) * 2011-04-29 2014-10-29 Zte Corp Doherty power amplifier and implementation method therefor
JP2015027084A (en) * 2013-07-29 2015-02-05 フリースケール セミコンダクター インコーポレイテッド Switch mode amplifier
WO2015121891A1 (en) * 2014-02-13 2015-08-20 三菱電機株式会社 Amplifier

Also Published As

Publication number Publication date
JPWO2008136124A1 (en) 2010-07-29

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