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WO2008136124A1 - 増幅器 - Google Patents

増幅器 Download PDF

Info

Publication number
WO2008136124A1
WO2008136124A1 PCT/JP2007/059110 JP2007059110W WO2008136124A1 WO 2008136124 A1 WO2008136124 A1 WO 2008136124A1 JP 2007059110 W JP2007059110 W JP 2007059110W WO 2008136124 A1 WO2008136124 A1 WO 2008136124A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
unit
bias control
transistor
gate
Prior art date
Application number
PCT/JP2007/059110
Other languages
English (en)
French (fr)
Inventor
Kazuhiro Uchiyama
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2009512854A priority Critical patent/JPWO2008136124A1/ja
Priority to PCT/JP2007/059110 priority patent/WO2008136124A1/ja
Publication of WO2008136124A1 publication Critical patent/WO2008136124A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/228—A measuring circuit being coupled to the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/462—Indexing scheme relating to amplifiers the current being sensed

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

　利得を向上する増幅器。増幅器（１００）においては、高周波増幅部（１２０）が化合物半導体から構成される電界効果型のトランジスタ（１２１）を含み、電流検出部（１４０）がトランジスタ（１２１）のゲート電流を検出し、バイアス制御部（１５０）が検出されたゲート電流に応じてトランジスタ（１２１）のゲートバイアスを制御する。化合物半導体としては、例えば、ＧａＡｓ（ガリウム砒素）又はＧａＮ（窒化ガリウム）を含む化合物半導体を用いることができる。こうすることにより、ゲート電流により増幅部の動作状態を判断できるので、バイアス制御する手段である電流検出部（１４０）及びバイアス制御部（１５０）には従来のようにＲＦ信号の一部を入力する必要がないため、ＲＦ信号の損失を発生させることなく増幅部の状態を判断することができる。この結果、増幅器（１００）の利得は、従来の増幅器に比べて向上する。
PCT/JP2007/059110 2007-04-26 2007-04-26 増幅器 WO2008136124A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009512854A JPWO2008136124A1 (ja) 2007-04-26 2007-04-26 増幅器
PCT/JP2007/059110 WO2008136124A1 (ja) 2007-04-26 2007-04-26 増幅器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/059110 WO2008136124A1 (ja) 2007-04-26 2007-04-26 増幅器

Publications (1)

Publication Number Publication Date
WO2008136124A1 true WO2008136124A1 (ja) 2008-11-13

Family

ID=39943246

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/059110 WO2008136124A1 (ja) 2007-04-26 2007-04-26 増幅器

Country Status (2)

Country Link
JP (1) JPWO2008136124A1 (ja)
WO (1) WO2008136124A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012105263A (ja) * 2010-11-05 2012-05-31 Pohang Univ Of Science & Technology Academy-Industry Cooperation 駆動増幅器を利用した３ウェイドハティ電力増幅器
CN102761310A (zh) * 2011-04-29 2012-10-31 中兴通讯股份有限公司 一种多合体功率放大器及其实现方法
EP2541759A4 (en) * 2011-04-29 2014-10-29 Zte Corp DOHERTY POWER AMPLIFIER AND METHOD FOR ITS USE
JP2015027084A (ja) * 2013-07-29 2015-02-05 フリースケール セミコンダクター インコーポレイテッド スイッチモード増幅器
WO2015121891A1 (ja) * 2014-02-13 2015-08-20 三菱電機株式会社 増幅器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02149108A (ja) * 1988-11-30 1990-06-07 Nec Corp ゲート電圧制御回路
JPH05235670A (ja) * 1992-02-03 1993-09-10 Nec Corp 電力増幅器
JPH07283656A (ja) * 1994-04-13 1995-10-27 Nec Corp 電力増幅回路
JP2000068753A (ja) * 1998-08-19 2000-03-03 Ntt Mobil Communication Network Inc 送信増幅器
JP2002100935A (ja) * 2000-09-21 2002-04-05 Matsushita Electric Ind Co Ltd 電力増幅装置及び方法
JP2006165856A (ja) * 2004-12-06 2006-06-22 Hitachi Kokusai Electric Inc 増幅装置
JP2006191590A (ja) * 2004-12-31 2006-07-20 Pohang Eng College 非対称電力駆動を用いた電力増幅装置
JP2007053540A (ja) * 2005-08-17 2007-03-01 Nec Corp ドハティ型増幅器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02149108A (ja) * 1988-11-30 1990-06-07 Nec Corp ゲート電圧制御回路
JPH05235670A (ja) * 1992-02-03 1993-09-10 Nec Corp 電力増幅器
JPH07283656A (ja) * 1994-04-13 1995-10-27 Nec Corp 電力増幅回路
JP2000068753A (ja) * 1998-08-19 2000-03-03 Ntt Mobil Communication Network Inc 送信増幅器
JP2002100935A (ja) * 2000-09-21 2002-04-05 Matsushita Electric Ind Co Ltd 電力増幅装置及び方法
JP2006165856A (ja) * 2004-12-06 2006-06-22 Hitachi Kokusai Electric Inc 増幅装置
JP2006191590A (ja) * 2004-12-31 2006-07-20 Pohang Eng College 非対称電力駆動を用いた電力増幅装置
JP2007053540A (ja) * 2005-08-17 2007-03-01 Nec Corp ドハティ型増幅器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012105263A (ja) * 2010-11-05 2012-05-31 Pohang Univ Of Science & Technology Academy-Industry Cooperation 駆動増幅器を利用した３ウェイドハティ電力増幅器
CN102761310A (zh) * 2011-04-29 2012-10-31 中兴通讯股份有限公司 一种多合体功率放大器及其实现方法
EP2538549A4 (en) * 2011-04-29 2014-03-05 Zte Corp DOHERTY POWER AMPLIFIER AND METHOD FOR ITS USE
US8773205B2 (en) 2011-04-29 2014-07-08 Zte Corporation Doherty power amplifier and implementation method thereof
EP2541759A4 (en) * 2011-04-29 2014-10-29 Zte Corp DOHERTY POWER AMPLIFIER AND METHOD FOR ITS USE
JP2015027084A (ja) * 2013-07-29 2015-02-05 フリースケール セミコンダクター インコーポレイテッド スイッチモード増幅器
WO2015121891A1 (ja) * 2014-02-13 2015-08-20 三菱電機株式会社 増幅器

Also Published As

Publication number Publication date
JPWO2008136124A1 (ja) 2010-07-29

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