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WO2019177037A1 - Antenne et dispositif de traitement au plasma - Google Patents

Antenne et dispositif de traitement au plasma Download PDF

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Publication number
WO2019177037A1
WO2019177037A1 PCT/JP2019/010311 JP2019010311W WO2019177037A1 WO 2019177037 A1 WO2019177037 A1 WO 2019177037A1 JP 2019010311 W JP2019010311 W JP 2019010311W WO 2019177037 A1 WO2019177037 A1 WO 2019177037A1
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WIPO (PCT)
Prior art keywords
antenna
insulating
peripheral surface
conductor
insulating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/010311
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English (en)
Japanese (ja)
Inventor
満雄 茨木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of WO2019177037A1 publication Critical patent/WO2019177037A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to an antenna for generating an inductively coupled plasma by flowing a high-frequency current, and a plasma processing apparatus including the antenna.
  • a plurality of metal pipes are connected with a hollow insulator interposed between adjacent metal pipes, and are connected to the outer periphery of the hollow insulator.
  • an O-ring is interposed between the outer peripheral surface of the metal pipe and the inner peripheral surface of the hollow insulator in order to ensure the sealing performance between the screw-fastened metal pipe and the hollow insulator. Therefore, there is a slight gap between them, and the metal pipe and the hollow insulator move relatively through this gap. As a result, if the antenna is lengthened, there is a possibility that the antenna will bend. Then, the distance between the antenna and the substrate changes along the longitudinal direction of the antenna. As a result, the density of plasma generated between the substrate and the antenna becomes non-uniform along the longitudinal direction of the antenna, and the thickness of the film formed on the substrate becomes non-uniform.
  • the present invention has been made to solve the above-mentioned problems, and even when the antenna is lengthened, the bending of the antenna is suppressed, and uniform plasma is generated along the longitudinal direction of the antenna, thereby improving the reliability.
  • the main challenge is to improve.
  • the antenna according to the present invention is an antenna for generating plasma by flowing a high-frequency current, and a pair of conductor elements are screwed to an insulating element interposed between them, One of the insulating elements has an outward surface provided at a position different from the threaded portion, and the other of the conductor element or the insulating element has an inward surface in contact with the outward surface. It is characterized by.
  • the outward surface provided on one of the conductor element or the insulating element and the inward surface provided on the other of the conductor element or the insulating element are in contact with each other, These surfaces restrict the relative movement of the conductor element and the insulating element, so that bending can be suppressed even when the antenna is lengthened. Thereby, since uniform plasma can be generated along the longitudinal direction of the antenna, quality such as film thickness can be ensured, and reliability can be improved.
  • the outward surface is provided over the entire outer peripheral surface of one of the conductor element or the insulating element. It is preferable that the inward surface is provided over the entire inner peripheral surface of the other of the conductor element or the insulating element.
  • one of the conductor element and the insulating element has an external thread portion formed on an outer peripheral surface thereof, Is also provided with a large-diameter portion having an outer diameter larger than the male screw portion on the axially central side, and the other of the conductor element or the insulating element has a female screw portion formed on an inner peripheral surface thereof, An internal diameter larger than that of the female screw portion is provided on the outer side in the axial direction than the female screw portion, and a countersink portion into which the large diameter portion is fitted is provided, and an outer peripheral surface of the large diameter portion is the outward surface.
  • the inner peripheral surface of the counterbored portion is the inward surface.
  • the outer peripheral surface of the large-diameter portion is an outward surface
  • the inner peripheral surface of the countersink portion into which the large-diameter portion is fitted is an inward surface.
  • the contact area of the surface can be increased.
  • a sealing member is interposed between the conductor element and the insulating element in order to ensure sealing performance
  • the sealing member is interposed between the outward surface and the inward surface, the outward surface A gap is formed between the antenna and the inward surface, and the antenna is bent. Therefore, in order to ensure the sealing performance between the conductor element and the insulating element while suppressing the bending of the antenna, the outward surface and the inward surface are different surfaces, the conductor element and the It is preferable that a sealing member is interposed between opposing surfaces of the insulating element.
  • One end portion of the conductor element or the insulating element is formed with a concave portion cut out in the axial center or a convex portion projecting outward in the axial direction, and the other outer peripheral surface of the conductive element or the insulating element. It is preferable that an annular stopper having a convex portion or a concave portion engaged with the concave portion or the convex portion is provided. With such a configuration, for example, by fixing the annular stopper to the conductor element or the insulating element provided with the annular stopper by punching or the like, it is difficult to loosen the screw fastening between the conductor element and the insulating element. Can do.
  • the annular stopper is provided on the outer peripheral surface of the conductor element, and is pressed outward in the axial direction by a nut screwed to the axially central side of the annular stopper on the outer peripheral surface.
  • the antenna may be covered with an insulating cover for the purpose of preventing charged particles in the plasma from entering a conductor element constituting the antenna.
  • the insulating element comes into contact with the insulating cover that is heated by the plasma, and a problem of thermal damage occurs particularly when the insulating element is made of resin.
  • the nut is screwed onto the outer peripheral surface of the conductor element as described above, even if the antenna is bent, the nut contacts the insulating cover, so that the insulating element contacts the insulating cover. And thermal damage to the insulating element can be prevented.
  • a first electrode extending to the other side of the pair of conductor elements, electrically connected to the other of the pair of conductor elements, and extending to one side of the pair of conductor elements through the interior of the insulating element;
  • the second electrode is opposed to the first electrode and a dielectric filling the space between the first electrode and the second electrode, and the dielectric is a liquid.
  • the capacitive element is electrically connected in series with the pair of conductor elements, as described above, the combined reactance of the antenna is obtained by subtracting the capacitive reactance from the inductive reactance. be able to.
  • the impedance of the antenna can be reduced, and even when the antenna is lengthened, the increase in impedance is suppressed, high-frequency current can easily flow through the antenna, and plasma with good uniformity can be generated efficiently.
  • the space between the first electrode and the second electrode is filled with the liquid dielectric, a gap generated between the electrode constituting the capacitor and the dielectric can be eliminated.
  • the capacitance value can be accurately set from the distance between the first electrode and the second electrode, the facing area, and the relative dielectric constant of the liquid dielectric without considering the gap.
  • the structure for pressing the electrode and the dielectric for filling the gap can be eliminated, and the structure around the antenna due to the pressing structure can be prevented from being complicated and the uniformity of plasma caused thereby can be prevented.
  • the pair of conductor elements have a flow path through which a coolant flows, and the coolant is the dielectric.
  • the antenna conductor which tends to become high temperature due to heat generated during plasma generation, can be cooled by the coolant, so that damage to the antenna itself or damage to the surrounding structure can be prevented and stable.
  • plasma can be generated.
  • the cooling liquid is used as the dielectric of the capacitive element, it is possible to suppress unexpected fluctuations in the capacitance while cooling the capacitive element.
  • the cooling liquid as a dielectric while adjusting the temperature to a constant temperature by a temperature control mechanism, it is possible to suppress changes in the relative permittivity due to temperature changes, and it is possible to suppress changes in capacitance that occur accordingly. .
  • a plasma processing apparatus includes the antenna described above, a vacuum container in which the antenna is disposed inside or outside, and a high-frequency power source that applies a high-frequency current to the antenna. It is. With the plasma processing apparatus configured as described above, since the bending of the antenna is suppressed as described above, the quality such as the thickness of the film can be ensured, and the reliability can be improved.
  • the bending of the antenna can be suppressed, and by generating uniform plasma along the longitudinal direction of the antenna, quality such as film thickness can be improved. It can be secured and the reliability can be improved.
  • FIG. 3 is an enlarged cross-sectional view schematically showing a peripheral configuration of the antenna of the same embodiment.
  • FIG. 3 is an enlarged cross-sectional view schematically showing a peripheral configuration of the antenna of the same embodiment.
  • It is a schematic diagram which shows the structure of the loosening suppression mechanism of the embodiment.
  • It is an expanded sectional view showing typically the circumference composition of the antenna of a modification.
  • It is an expanded sectional view showing typically the circumference composition of the antenna of a modification.
  • It is a longitudinal cross-sectional view which shows typically the structure of the plasma processing apparatus of deformation
  • the plasma processing apparatus 100 of this embodiment performs processing on the substrate W using inductively coupled plasma P.
  • substrate W is a board
  • the processing applied to the substrate W is, for example, film formation by plasma CVD, etching, ashing, sputtering, or the like.
  • the plasma processing apparatus 100 is a plasma CVD apparatus when a film is formed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed. be called.
  • the plasma processing apparatus 100 includes a vacuum vessel 2 that is evacuated and into which a gas 7 is introduced, a linear antenna 3 that is disposed in the vacuum vessel 2, and a vacuum vessel 2. And a high frequency power source 4 for applying a high frequency for generating the inductively coupled plasma P to the antenna 3.
  • a high frequency is applied to the antenna 3 from the high frequency power source 4
  • a high frequency current IR flows through the antenna 3
  • an induction electric field is generated in the vacuum chamber 2, and inductively coupled plasma P is generated.
  • the vacuum vessel 2 is, for example, a metal vessel, and the inside thereof is evacuated by the evacuation device 6.
  • the vacuum vessel 2 is electrically grounded in this example.
  • the gas 7 is introduced into the vacuum vessel 2 via, for example, a flow rate regulator (not shown) and a plurality of gas inlets 21 formed on the side wall of the vacuum vessel 2.
  • the gas 7 may be made in accordance with the processing content applied to the substrate W.
  • the gas 7 is a source gas or a gas obtained by diluting it with a diluent gas (for example, H 2 ). More specifically, when the source gas is SiH 4 , the Si film is formed, when SiH 4 + NH 3 is used, the SiN film is formed, when SiH 4 + O 2 is used, the SiO 2 film is formed, and when SiF 4 + N 2 is used, the SiN film is formed.
  • F films fluorinated silicon nitride films
  • a substrate holder 8 that holds the substrate W is provided in the vacuum container 2.
  • a bias voltage may be applied to the substrate holder 8 from the bias power supply 9.
  • the bias voltage is, for example, a negative DC voltage, a negative pulse voltage, or the like, but is not limited thereto. With such a bias voltage, for example, the energy when positive ions in the plasma P are incident on the substrate W can be controlled to control the crystallinity of the film formed on the surface of the substrate W. .
  • a heater 81 for heating the substrate W may be provided in the substrate holder 8.
  • the antenna 3 is disposed above the substrate W in the vacuum container 2 so as to be along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W).
  • the number of antennas 3 arranged in the vacuum vessel 2 may be one or plural.
  • Insulating members 11 are respectively provided at portions where both ends of the antenna 3 penetrate outside the vacuum vessel 2. Both end portions of the antenna 3 pass through the insulating members 11, and the through portions are vacuum-sealed by, for example, packing 12. Each insulating member 11 and the vacuum vessel 2 are also vacuum-sealed by, for example, packing 13.
  • the insulating member 11 is made of, for example, ceramics such as alumina, quartz, engineering plastics such as polyphenine sulfide (PPS), polyether ether ketone (PEEK), or the like.
  • a portion of the antenna 3 located in the vacuum vessel 2 is covered with a straight tubular insulating cover 10. Both ends of the insulating cover 10 are supported by insulating members 11. In addition, it is not necessary to seal between the both ends of the insulating cover 10 and the insulating member 11. This is because even if the gas 7 enters the space in the insulating cover 10, the space P is small and the electron moving distance is short, so that plasma P is not normally generated in the space.
  • the material of the insulating cover 10 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon or the like.
  • the insulating cover 10 By providing the insulating cover 10, it is possible to prevent charged particles in the plasma P from entering the metal pipe 31 constituting the antenna 3, so that charged particles (mainly electrons) enter the metal pipe 31. An increase in plasma potential can be suppressed, and metal contamination (metal contamination) on the plasma P and the substrate W caused by sputtering of the metal pipe 31 by charged particles (mainly ions) can be suppressed. .
  • a high-frequency power source 4 is connected to a feeding end portion 3a that is one end portion of the antenna 3 via a matching circuit 41, and a termination portion 3b that is the other end portion is directly grounded.
  • the power supply end 3a may be connected to the high frequency power supply 4 via a capacitor or a coil, and the terminal end 3b may be grounded via a capacitor or a coil.
  • the high-frequency current IR can flow from the high-frequency power source 4 to the antenna 3 through the matching circuit 41.
  • the frequency of the high-frequency current IR is, for example, a general 13.56 MHz, but is not limited thereto.
  • the antenna 3 has a hollow structure having a flow path through which the coolant CL flows.
  • the coolant CL circulates through the antenna 3 through a circulation channel 14 provided outside the vacuum vessel 2, and the circulation channel 14 has heat for adjusting the coolant CL to a constant temperature.
  • a temperature control mechanism 141 such as an exchanger and a circulation mechanism 142 such as a pump for circulating the coolant CL in the circulation flow path 14 are provided.
  • the cooling liquid CL high resistance water is preferable from the viewpoint of electrical insulation, for example, pure water or water close thereto is preferable.
  • a liquid refrigerant other than water such as a fluorine-based inert liquid, may be used.
  • the antenna 3 is provided between at least two tubular metal conductor elements 31 (hereinafter referred to as “metal pipes 31”) and metal pipes 31 adjacent to each other.
  • metal pipes 31 tubular metal conductor elements 31
  • metal pipes 31 tubular insulating element 32
  • capacitor 33 that is a capacitive element electrically connected in series with the adjacent metal pipes 31 are provided. ing.
  • the number of metal pipes 31 is two, and the number of insulating pipes 32 and capacitors 33 is one each.
  • one metal pipe 31 is also referred to as “first metal pipe 31A”, and the other metal pipe is also referred to as “second metal pipe 31B”.
  • the antenna 3 may have a configuration including three or more metal pipes 31. In this case, the number of the insulating pipes 32 and the capacitors 33 is one less than the number of the metal pipes 31. Become.
  • the metal pipe 31 has a straight tube shape in which a linear flow path 31x in which the coolant CL flows is formed. And the external thread part 31a is formed in the outer peripheral part of the longitudinal direction at least one end part of the metal pipe 31. As shown in FIG. In order to make the parts common with the configuration in which the plurality of metal pipes 31 are connected, it is desirable that the male pipe portions 31a be formed at both ends in the longitudinal direction of the metal pipe 31 so as to be compatible.
  • the material of the metal pipe 31 is, for example, copper, aluminum, alloys thereof, stainless steel, or the like.
  • the insulating pipe 32 has a straight tube shape in which a linear flow path 32x in which the cooling liquid CL flows is formed.
  • a female screw portion 32 a is formed on the inner peripheral surface of the insulating pipe 32 to be screwed into and connected to the male screw portion 31 a of the metal pipe 31.
  • a recess 32b for fitting a pair of electrodes 33A and 33B constituting the capacitor 33 is formed on the inner wall of the insulating pipe 32 in the axial direction center side of each female thread portion 32a over the entire circumferential direction.
  • the insulating pipe 32 of this embodiment is formed from a single member, it may be formed by joining a plurality of members.
  • the material of the insulating pipe 32 is, for example, alumina, fluororesin, polyethylene (PE), engineering plastic (for example, polyphenine sulfide (PPS), polyether ether ketone (PEEK), etc.).
  • the capacitor 33 is provided inside the insulating pipe 32. Specifically, the capacitor 33 is provided inside the flow path 32x through which the coolant CL of the insulating pipe 32 flows.
  • the capacitor 33 includes a first electrode 33A electrically connected to one of the adjacent metal pipes 31 (first metal pipe 31A) and the other of the adjacent metal pipes 31 (second metal).
  • each of the electrodes 33A and 33B has a substantially rotating body shape, and a main flow path 33x is formed at the center along the central axis.
  • each of the electrodes 33A and 33B includes a flange portion 331 that electrically contacts an end portion of the metal pipe 31 on the insulating pipe 32 side, and an extending portion 332 that extends from the flange portion 331 to the insulating pipe 32 side. have.
  • the flange portion 331 and the extending portion 332 may be formed from a single member, or may be formed by separate parts and joined together.
  • the material of the electrodes 33A and 33B is, for example, aluminum, copper, or an alloy thereof.
  • the flange portion 331 is in contact with the end portion of the metal pipe 31 on the insulating pipe 32 side over the entire circumferential direction. Specifically, the axial end surface of the flange portion 331 is in contact with the tip end surface of a cylindrical contact portion 311 formed at the end portion of the metal pipe 31 over the entire circumferential direction.
  • the extending part 332 has a cylindrical shape, and a main flow path 33x is formed therein.
  • the extension part 332 of the first electrode 33A and the extension part 332 of the second electrode 33B are arranged coaxially with each other. That is, the extension part 332 of the second electrode 33B is provided in a state of being inserted into the extension part 332 of the first electrode 33A. Thereby, a cylindrical space along the flow path direction is formed between the extending portion 332 of the first electrode 33A and the extending portion 332 of the second electrode 33B.
  • Each of the electrodes 33 ⁇ / b> A and 33 ⁇ / b> B configured in this way is fitted in a recess 32 b formed on the inner wall of the insulating pipe 32.
  • the first electrode 33A is fitted in the recess 32b formed on one end side in the axial direction of the insulating pipe 32
  • the second electrode is inserted in the recess 32b formed on the other end side in the axial direction of the insulating pipe 32.
  • 33B is fitted.
  • each electrode 33A, 33B when the end face of the flange portion 331 of each electrode 33A, 33B is in contact with the surface facing the axially outer side of each recess 32b, the extension portion of the second electrode 33B with respect to the extension portion 332 of the first electrode 33A An insertion dimension of 332 is defined.
  • the electrodes 33A and 33B are fitted into the recesses 32b of the insulating pipe 32, and the male threaded portion 31a of the metal pipe 31 is screwed into the female threaded portion 32a of the insulating pipe 32, whereby the contact portion of the metal pipe 31 is contacted.
  • the tip surface of 311 comes into contact with the flange portion 331 of the electrodes 33A and 33B, and the electrodes 33A and 33B are sandwiched and fixed between the insulating pipe 32 and the metal pipe 31.
  • the antenna 3 according to this embodiment has a structure in which the metal pipe 31, the insulating pipe 32, the first electrode 33A, and the second electrode 33B are coaxially arranged.
  • connection part of the metal pipe 31 and the insulation pipe 32 has a seal structure with respect to the vacuum and the coolant CL.
  • This seal structure is realized by the seal member 15 such as packing provided at the base end portion of the male screw portion 31a.
  • a taper screw structure for a pipe may be used.
  • the sealing structure between the metal pipe 31 and the insulating pipe 32 and the electrical contact between the metal pipe 31 and each electrode 33A, 33B are performed together with the fastening of the male screw portion 31a and the female screw portion 32a. Is very simple.
  • the antenna 3 of the present embodiment is provided on one of the metal pipe 31 and the insulating pipe 32 and on the other side of the metal pipe 31 or the insulating pipe 32 and is in contact with the outward surface 34.
  • the inwardly facing surface 35 and the outwardly facing surface 34 and the inwardly facing surface 35 constitute a bending suppression mechanism that suppresses the bending of the antenna 3.
  • the inward surface 35 of the present embodiment is provided on the inner peripheral surface of the insulating pipe 32 and is formed at a position different from the internal thread portion 32a. More specifically, the insulating pipe 32 has a countersink portion 321 having an inner wall that is countersunk axially outside the female screw portion 32a, and the inner peripheral surface of the countersink portion 321 is an inward surface. 35.
  • the counterbore portions 321 are formed at both axial ends of the insulating pipe 32. Specifically, the counterbore portions 321 are counterclockwise from the opening at both ends to the front of the seal member 15 described above. That is, the counterbore part 321 has a larger inner diameter than the part where the female thread part 32 a and the seal member 15 are provided on the inner peripheral surface of the insulating pipe 32, and here is the part having the largest inner diameter in the insulating pipe 32.
  • the inward surface 35 is formed over the entire inner peripheral surface of the counterbored portion 321.
  • the inward surface 35 is a surface different from the surface on which the internal thread portion 32 a and the seal member 15 are provided on the inner peripheral surface of the insulating pipe 32, and here, it extends along the axial direction of the insulating pipe 32. (Substantially parallel to the axial direction).
  • the outward surface 34 of the present embodiment is provided on the outer peripheral surface of the metal pipe 31 and is formed at a position different from the male screw portion 31a. More specifically, the metal pipe 31 has a large-diameter portion 312 having an outer diameter larger than that of the male screw portion 31a on the axial center side of the male screw portion 31a and fitted to the counterbore portion 321 described above. The outer peripheral surface of the large diameter portion 312 is the outward surface 34.
  • the large-diameter portion 312 is formed closer to the center side in the axial direction than the seal member 15 of the metal pipe 31. That is, the large-diameter portion 312 has a larger outer diameter than the portion where the male screw portion 31 a and the seal member 15 are provided on the outer peripheral surface of the metal pipe 31, and here is the portion of the metal pipe 31 having the largest outer diameter. Specifically, the outer diameter of the large-diameter portion 312 is equal to the inner diameter of the counterbore portion 321, and thereby the large-diameter portion 312 and the counterbore portion 321 are fitted together with a backlash structure without play.
  • the outward surface 34 is an outer peripheral surface of a portion of the large-diameter portion 312 that is fitted to the counterboring portion 321, in other words, a portion facing the inner peripheral surface of the counterboring portion 321 on the outer peripheral surface of the large-diameter portion 312. is there. That is, the outward surface 34 is a surface different from the surface on which the male screw portion 31 a and the seal member 15 are provided on the outer peripheral surface of the metal pipe 31, and here, along the axial direction of the metal pipe 31. It extends (substantially parallel to the axial direction).
  • the antenna 3 of the present embodiment includes a loosening suppression mechanism 5 that suppresses loosening of the metal pipe 31 and the insulating pipe 32 that are screw-fastened.
  • the antenna 3 according to the present invention is not necessarily provided with the loosening suppression mechanism 5.
  • these convex part 52 and the recessed part 53 comprise the loosening suppression mechanism 5 mentioned above, and when the convex part 52 engages with the recessed part 53, the looseness of the metal pipe 31 and the insulation pipe 32 is suppressed. .
  • the second male threaded portion 31b is formed on the outer peripheral surface of the metal pipe 31 on the center side in the axial direction from the insulating pipe 32.
  • the loosening suppression mechanism 5 further includes a nut 54 that is screwed into the second male screw portion 31b.
  • the nut 54 has a larger outer diameter than the insulating pipe 32, and is provided closer to the center in the axial direction than the annular stopper 51 described above.
  • the outer peripheral surface of the large diameter portion 312 is an outward surface 34
  • the inner peripheral surface of the counterbore portion 321 to which the large diameter portion 312 is fitted is an inward surface 35
  • the sealing member 15 is interposed between the opposing surfaces of the metal pipe 31 and the insulating pipe 32 that are different from the outward surface 34 and the inward surface 35, the outward surface 34 and The sealing property can be ensured without causing a gap or play between the inward surface 35.
  • the convex portion 52 provided on the end surface of the annular stopper 51 is engaged with the concave portion 53 provided on the end surface of the insulating pipe 32, and the annular stopper 51 is pressed against the insulating pipe 32 by the nut 54. Therefore, it is possible to suppress loosening of the screw fastening between the metal pipe 31 and the insulating pipe 32.
  • the metal pipe 31 has the outward surface 34 and the insulating pipe 32 has the inward surface 35, but the metal pipe 31 has the inward surface 35 as shown in FIG. 4.
  • the insulating pipe 32 may have an outward surface 34.
  • the capacitor 33 may be provided outside the insulating pipe 32 as in the configuration shown in FIG.
  • the outward surface 34 was the outer peripheral surface of the large diameter part 312 whose outer diameter is larger than the external thread part 31a in the metal pipe 31 in the said embodiment, as shown in FIG.
  • the outer peripheral surface of the small diameter part 314 whose outer diameter is smaller than the external thread part 31a provided in the axial direction outer side than 31a may be sufficient.
  • the counterbore part 321 of the insulating pipe 32 only needs to be provided in the axial direction center side with respect to the female screw part 32a, and the inner peripheral surface of the counterbore part 321 may be the inward surface 35.
  • outward surface 34 and the inward surface 35 of the above-described embodiment extend along the axial direction of the metal pipe 31 and the insulating pipe 32, but as shown in FIG. It may be inclined with respect to the axial direction.
  • the perimeter of the internal peripheral surface of the counterboring part 321 was the inward surface 35, for example, it is an inward surface intermittently along the circumferential direction in the internal peripheral surface of the counterboring part 321. It is not always necessary to provide the inward surface 35 over the entire circumference of the inner peripheral surface, such as providing 35.
  • the outward surface 34 is not necessarily provided over the entire circumference of the outer peripheral surface, for example, intermittently provided along the circumferential direction on the outer peripheral surface of the large-diameter portion 312.
  • outward surface 34 and the inward surface 35 may be provided at a plurality of locations in the axial direction, such as both sides of the screw portions 31a and 32a along the axial direction.
  • the annular stopper 51 and the metal pipe 31 may be fixed by punching in a state where the convex portion 52 is engaged with the concave portion 53.
  • the antenna 3 is disposed in the processing chamber of the substrate W.
  • the antenna 3 may be disposed outside the processing chamber 18.
  • the plurality of antennas 3 are arranged in an antenna chamber 20 that is partitioned from the processing chamber 18 by a dielectric window 19 in the vacuum vessel 2.
  • the antenna chamber 20 is evacuated by the evacuation device 21.
  • the metal pipe and the insulating pipe have a tubular shape having one internal flow path, but may have two or more internal flow paths or have a branched internal flow path. good. Further, the metal pipe and the insulating pipe may be solid.
  • the extending portion has a cylindrical shape, but may have another rectangular tube shape, a flat plate shape, or a curved or bent plate shape.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'objet de la présente invention est d'empêcher une antenne de dévier même lorsque l'antenne est longue, et de générer un plasma qui est uniforme dans la direction longitudinale de l'antenne, ce qui augmente la fiabilité. Une antenne 3 sert à générer un plasma lorsqu'un courant à haute fréquence est canalisé à travers celle-ci, une paire d'éléments conducteurs 31 étant vissés sur un élément isolant 32 intercalé entre ceux-ci, soit l'élément isolant 32 soit les éléments conducteurs 31 ayant une surface orientée vers l'extérieur 34 disposée à un emplacement différent d'une partie de vis, et l'autre élément parmi l'élément isolant 32 et les éléments conducteurs 31 ayant une surface orientée vers l'intérieur 35 en contact avec la surface orientée vers l'extérieur 34.
PCT/JP2019/010311 2018-03-14 2019-03-13 Antenne et dispositif de traitement au plasma Ceased WO2019177037A1 (fr)

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JP2018046324A JP7025711B2 (ja) 2018-03-14 2018-03-14 アンテナ及びプラズマ処理装置

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CN115735268B (zh) * 2020-06-23 2025-07-08 三国电子有限会社 通过电感耦合等离子体进行溅射成膜的成膜装置
JP7715998B2 (ja) * 2022-01-18 2025-07-31 日新電機株式会社 アンテナ及びプラズマ処理装置
JP2024068522A (ja) * 2022-11-08 2024-05-20 日新電機株式会社 プラズマ処理装置
JP2024100104A (ja) * 2023-01-13 2024-07-26 日新電機株式会社 アンテナ装置及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011041087A2 (fr) * 2009-09-29 2011-04-07 Applied Materials, Inc. Elément de source résonnant à plasma à couplage inductif (icp)
JP2015508565A (ja) * 2012-01-27 2015-03-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ セグメント化されたアンテナアセンブリ
JP2016138598A (ja) * 2015-01-28 2016-08-04 日新電機株式会社 パイプ保持接続構造およびそれを備える高周波アンテナ装置

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Publication number Priority date Publication date Assignee Title
CN105491780B (zh) * 2014-10-01 2018-03-30 日新电机株式会社 等离子体产生用的天线及具备该天线的等离子体处理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011041087A2 (fr) * 2009-09-29 2011-04-07 Applied Materials, Inc. Elément de source résonnant à plasma à couplage inductif (icp)
JP2015508565A (ja) * 2012-01-27 2015-03-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ セグメント化されたアンテナアセンブリ
JP2016138598A (ja) * 2015-01-28 2016-08-04 日新電機株式会社 パイプ保持接続構造およびそれを備える高周波アンテナ装置

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TW201946501A (zh) 2019-12-01

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