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WO2018151114A1 - Antenne pour générer un plasma, et dispositif de traitement au plasma et structure d'antenne comportant une antenne pour générer un plasma - Google Patents

Antenne pour générer un plasma, et dispositif de traitement au plasma et structure d'antenne comportant une antenne pour générer un plasma Download PDF

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Publication number
WO2018151114A1
WO2018151114A1 PCT/JP2018/004939 JP2018004939W WO2018151114A1 WO 2018151114 A1 WO2018151114 A1 WO 2018151114A1 JP 2018004939 W JP2018004939 W JP 2018004939W WO 2018151114 A1 WO2018151114 A1 WO 2018151114A1
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WO
WIPO (PCT)
Prior art keywords
electrode
antenna
conductor
insulating
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/004939
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English (en)
Japanese (ja)
Inventor
靖典 安東
李　東偉
清 久保田
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Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017204967A external-priority patent/JP6931461B2/ja
Priority claimed from JP2017204961A external-priority patent/JP6341329B1/ja
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to US16/485,166 priority Critical patent/US10932353B2/en
Priority to CN201880011433.3A priority patent/CN110291847A/zh
Priority to KR1020197023197A priority patent/KR102235221B1/ko
Publication of WO2018151114A1 publication Critical patent/WO2018151114A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to an antenna for generating an inductively coupled plasma by flowing a high-frequency current, a plasma processing apparatus including the antenna, and an antenna structure.
  • a plasma processing apparatus has been proposed in which a high-frequency current is passed through an antenna, an inductively coupled plasma (abbreviated as ICP) is generated by an induced electric field generated by the antenna, and the substrate W is processed using the inductively coupled plasma.
  • ICP inductively coupled plasma
  • a plurality of metal pipes are connected with a hollow insulator interposed between adjacent metal pipes, and are connected to the outer periphery of the hollow insulator.
  • a second electrode that is electrically connected to the first metal pipe and overlaps the first electrode, and a dielectric sheet disposed between the first electrode and the second electrode.
  • the above capacitor has a laminated structure of the first electrode, the dielectric sheet, and the second electrode, a gap may be generated between the electrode and the dielectric. If so, there is a possibility of arc discharge occurring in this gap, which may lead to deterioration of the capacitor, so there is room for improvement in the capacitor structure.
  • a capacitive element is incorporated in an antenna to reduce the impedance of the antenna, and a gap generated between an electrode constituting the capacitive element and a dielectric is eliminated. Is the main issue.
  • the antenna for generating plasma is an antenna for generating plasma by flowing a high-frequency current, and is provided between at least two conductor elements and the conductor elements adjacent to each other.
  • An insulating element that insulates the conductive elements; and a capacitive element electrically connected in series with the conductive elements adjacent to each other, wherein the capacitive element is electrically connected to one of the conductive elements adjacent to each other.
  • a first electrode and a second electrode electrically connected to the other of the conductor elements adjacent to each other and disposed opposite to the first electrode; the first electrode and the second electrode; And a dielectric filling the space between the electrodes, wherein the dielectric is a liquid.
  • the capacitive element is electrically connected in series to the conductor elements adjacent to each other via the insulating element, the combined reactance of the antenna can be simply described as inductive reactance. Since the capacitive reactance is subtracted from the antenna impedance, the antenna impedance can be reduced. As a result, even when the antenna is lengthened, an increase in impedance can be suppressed, high-frequency current can easily flow through the antenna, and plasma can be generated efficiently.
  • the space between the first electrode and the second electrode is filled with the liquid dielectric, it is possible to eliminate the gap generated between the electrode constituting the capacitive element and the dielectric. .
  • the capacitance value can be accurately set from the distance between the first electrode and the second electrode, the facing area, and the relative dielectric constant of the liquid dielectric without considering the gap.
  • the structure for pressing the electrode and the dielectric for filling the gap can be eliminated, and the structure around the antenna due to the pressing structure can be prevented from being complicated and the uniformity of plasma caused thereby can be prevented.
  • the insulating element has a tubular shape, and the capacitive element is provided inside the insulating element. desirable.
  • the conductor element and the insulating element are formed in a tubular shape, and a coolant is circulated inside the conductor element and the insulating element. Conceivable.
  • the cooling liquid is supplied to a space between the first electrode and the second electrode so that the cooling liquid is the dielectric.
  • the cooling liquid is adjusted to a constant temperature by a temperature control mechanism.
  • this cooling liquid as a dielectric, it is possible to suppress a change in relative permittivity due to a temperature change and suppress a change in capacitance value. Further, when water is used as the coolant, the relative permittivity of water is about 80 (20 ° C.), which is larger than the dielectric sheet made of resin, so that a capacitive element that can withstand high voltage can be configured. it can.
  • each electrode has a flange portion that is in electrical contact with an end portion of the conductor element on the insulating element side, and extends from the flange portion to the insulating element side. It is desirable to have an extension part. If it is this structure, the opposing area between electrodes can be set with an extension part, enlarging a contact area with a conductor element by a flange part.
  • the extending portions of the electrodes have a tubular shape and are arranged coaxially with each other. With this configuration, it is possible to generate plasma with good uniformity by making the distribution of the high-frequency current flowing through the conductor element uniform in the circumferential direction while increasing the facing area between the electrodes.
  • each electrode is fitted in a recess formed in a side peripheral wall of the insulating element. If it is this structure, the relative position of the extension part of each electrode can be determined by fitting a flange part to the recessed part of an insulation element, and the assembly can be made easy.
  • An antenna for generating plasma is an antenna for generating plasma by flowing a high-frequency current, and includes at least two conductor elements, and a first conductor element and a second conductor adjacent to each other.
  • An insulating element provided between the elements to insulate them; and a capacitive element electrically connected in series with the first conductive element and the second conductive element, wherein the capacitive element comprises the first conductive element
  • the capacitive reactance is electrically connected in series to conductor elements adjacent to each other provided via an insulating element, so the combined reactance of the antenna can be simply described as follows: Since the capacitive reactance is subtracted from the inductive reactance, the impedance of the antenna can be reduced. As a result, even when the antenna is lengthened, an increase in impedance can be suppressed, high-frequency current can easily flow through the antenna, and plasma can be generated efficiently.
  • the space between the first electrode and the second electrode is filled with the liquid dielectric, it is possible to eliminate the gap generated between the electrode constituting the capacitive element and the dielectric. .
  • the capacitance value can be accurately set from the distance between the first electrode and the second electrode, the facing area, and the relative dielectric constant of the liquid dielectric without considering the gap.
  • the structure for pressing the electrode and the dielectric for filling the gap can be eliminated, and the structure around the antenna due to the pressing structure can be prevented from being complicated and the uniformity of plasma caused thereby can be prevented.
  • the second electrode is opposed to the first electrode by extending from the second conductor element side to the first conductor element side through the inside of the insulating element, the extension dimension can be changed. Capacitance values necessary for the capacitive element can be easily obtained.
  • the first electrode has a tubular shape, and the second electrode extends into the internal space of the first electrode.
  • the structure which has is mentioned.
  • the distance between the inner peripheral surface of the first electrode and the outer peripheral surface of the extending portion is constant along the circumferential direction.
  • each conductor element has a tubular shape and a coolant is circulated inside each conductor element.
  • the coolant flowing inside the first conductor element flows between the first electrode and the second electrode, functions as the dielectric, and is formed on the second electrode. It is desirable to be configured so as to be led into the second electrode from the one or more through holes thus formed and to flow out into the second conductor element.
  • the cooling liquid is adjusted to a constant temperature by a temperature control mechanism.
  • this cooling liquid as a dielectric, it is possible to suppress a change in relative permittivity due to a temperature change and suppress a change in capacitance value. Further, when water is used as the coolant, the relative permittivity of water is about 80 (20 ° C.), which is larger than the dielectric sheet made of resin, so that a capacitive element that can withstand high voltage can be configured. it can.
  • the second electrode can be reduced in order to reduce the resistance to the flow of the coolant. It is preferable that one or a plurality of grooves that extend along the flow direction of the coolant is formed in communication with the through hole.
  • each of the electrodes has a corrosion-resistant layer on at least the surfaces of the electrodes facing each other.
  • the corrosion-resistant layer is a plating film or a surface oxide film of the first electrode and the second electrode.
  • the plasma processing apparatus includes a vacuum container that is evacuated and into which a gas is introduced, an antenna that is disposed inside or outside the vacuum container, and a high-frequency power source that supplies a high-frequency current to the antenna. And the substrate is processed using plasma generated by the antenna, and the antenna has the above-described configuration. According to this plasma processing apparatus, plasma with good uniformity can be efficiently generated by the antenna described above, so that the uniformity and efficiency of substrate processing can be improved.
  • both ends of the antenna extend out of the vacuum container, and in the adjacent antennas, the end of one antenna and the end of the other antenna are electrically connected by a connecting conductor.
  • a connecting conductor it is desirable that high frequency currents in opposite directions flow through the antennas adjacent to each other.
  • connection conductor has a flow path inside, and a coolant flows through the flow path.
  • a coolant flows inside the conductor element and the insulating element, and in the antennas adjacent to each other, the coolant that flows through one of the antennas flows to the other antenna through the flow path of the connection conductor. It is desirable that With this configuration, both the antenna and the connection conductor can be cooled by a common coolant. In addition, since a plurality of antennas can be cooled by a single flow path, the configuration of the circulation flow path for circulating the coolant can be simplified. In addition, when the flow path of the antenna and the flow path of the connection conductor become long, the lowering of the dielectric constant on the downstream side may occur due to the rise of the coolant. For this reason, the number of antennas connected by the connection conductor is set in consideration of the temperature rise of the coolant, and for example, the number of antennas is about four.
  • connection conductor includes one conductor portion connected to one of the antennas adjacent to each other, and the other conductor portion connected to the other antenna, It is desirable to have a capacitive element electrically connected in series to the one conductor part and the other conductor part.
  • a configuration in which an insulating cover for covering the antenna is provided may be used for the purpose of suppressing the charged particles in the plasma from entering a conductor element constituting the antenna.
  • the antenna is lengthened due to the configuration of the antenna, the antenna is bent, and the insulating element comes into contact with the insulating cover that is heated by plasma.
  • the insulating element is made of resin, the problem of thermal damage becomes particularly significant.
  • a convex portion protruding toward the insulating cover is formed on the outer peripheral surface of at least one of the first conductor element or the second conductor element. desirable.
  • the convex portion is formed continuously or intermittently over the entire circumferential direction of the outer peripheral surface. Also, with this configuration, the contact area between the convex portion and the insulating cover can be increased, and the load on the insulating cover can be dispersed.
  • the convex portion is formed at a position adjacent to the insulating element on the outer peripheral surfaces of the first conductor element and the second conductor element. It is desirable that
  • the antenna structure according to the present invention includes the antenna described above and an insulating cover that covers the antenna, and the insulating cover is provided on at least one outer peripheral surface of the first conductor element or the second conductor element. A convex portion protruding toward the surface is formed.
  • a plasma processing apparatus includes a processing chamber that is evacuated and into which a gas is introduced, an antenna according to any one of claims 1 to 6 disposed outside the processing chamber, and a high-frequency wave to the antenna.
  • a high-frequency power source for supplying a current, and configured to perform processing on the substrate in the processing chamber using plasma generated by the antenna.
  • conditions such as the pressure of the processing chamber and conditions such as the pressure of the antenna chamber in which the antenna is disposed can be individually controlled, and plasma can be generated efficiently, and the substrate Can be processed efficiently.
  • a plurality of the antennas are provided, and in the antennas adjacent to each other, one end of the antenna and the other end of the antenna Are preferably electrically connected by a connecting conductor so that high-frequency currents in opposite directions flow through the adjacent antennas.
  • the antenna structure according to the present invention further includes an antenna for generating a plasma when a high-frequency current is passed, and an insulating cover that covers the antenna, and the antenna is adjacent to at least two conductor elements.
  • An insulating element provided between the first conductor element and the second conductor element to insulate them; and a capacitive element electrically connected in series with the first conductor element and the second conductor element
  • the capacitive element is electrically connected to one of the conductor elements adjacent to each other and electrically connected to the other of the conductor elements adjacent to each other, and the first electrode
  • a dielectric that fills a space between the first electrode and the second electrode, the dielectric being a liquid, and the first conductor element Or the second At least one outer circumferential surface of the conductor elements, characterized in that the protrusion protruding toward the insulating cover is formed.
  • the impedance of the antenna can be reduced by incorporating the capacitive element into the antenna, and the gap generated between the electrode and the dielectric constituting the capacitive element can be eliminated. Can be generated efficiently.
  • the plasma processing apparatus 100 of this embodiment performs processing on the substrate W using inductively coupled plasma P.
  • substrate W is a board
  • the processing applied to the substrate W is, for example, film formation by plasma CVD, etching, ashing, sputtering, or the like.
  • the plasma processing apparatus 100 is a plasma CVD apparatus when a film is formed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed. be called.
  • the plasma processing apparatus 100 includes a vacuum vessel 2 that is evacuated and into which a gas 7 is introduced, a linear antenna 3 that is disposed in the vacuum vessel 2, and a vacuum vessel 2. And a high frequency power source 4 for applying a high frequency for generating the inductively coupled plasma P to the antenna 3.
  • a high frequency is applied to the antenna 3 from the high frequency power source 4
  • a high frequency current IR flows through the antenna 3
  • an induction electric field is generated in the vacuum chamber 2, and inductively coupled plasma P is generated.
  • the vacuum vessel 2 is a metal vessel, for example, and the inside thereof is evacuated by the evacuation device 6.
  • the vacuum vessel 2 is electrically grounded in this example.
  • the gas 7 is introduced into the vacuum vessel 2 through, for example, a flow rate regulator (not shown) and a plurality of gas inlets 21 arranged in a direction along the antenna 3.
  • the gas 7 may be made in accordance with the processing content applied to the substrate W.
  • the gas 7 is a source gas or a gas obtained by diluting it with a diluent gas (for example, H 2 ). More specifically, when the source gas is SiH 4 , the Si film is formed, when SiH 4 + NH 3 is used, the SiN film is formed, when SiH 4 + O 2 is used, the SiO 2 film is formed, and when SiF 4 + N 2 is used, the SiN film is formed.
  • F films fluorinated silicon nitride films
  • a substrate holder 8 for holding the substrate W is provided in the vacuum vessel 2.
  • a bias voltage may be applied to the substrate holder 8 from the bias power supply 9.
  • the bias voltage is, for example, a negative DC voltage, a negative bias voltage, or the like, but is not limited thereto. With such a bias voltage, for example, the energy when positive ions in the plasma P are incident on the substrate W can be controlled to control the crystallinity of the film formed on the surface of the substrate W.
  • a heater 81 for heating the substrate W may be provided in the substrate holder 8.
  • the antenna 3 is arranged above the substrate W in the vacuum container 2 so as to be along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W).
  • the number of antennas 3 arranged in the vacuum vessel 2 may be one or plural.
  • the vicinity of both end portions of the antenna 3 passes through opposite side walls of the vacuum vessel 2.
  • Insulating members 11 are respectively provided at portions where both ends of the antenna 3 penetrate outside the vacuum vessel 2. Both end portions of the antenna 3 pass through the insulating members 11, and the through portions are vacuum-sealed by, for example, packing 12. Each insulating member 11 and the vacuum vessel 2 are also vacuum-sealed by, for example, packing 13.
  • the insulating member 11 is made of, for example, ceramics such as alumina, quartz, engineering plastics such as polyphenine sulfide (PPS), polyether ether ketone (PEEK), or the like.
  • a portion of the antenna 3 located in the vacuum vessel 2 is covered with a straight tubular insulating cover 10. Both ends of the insulating cover 10 are supported by insulating members 11. In addition, it is not necessary to seal between the both ends of the insulating cover 10 and the insulating member 11. This is because even if the gas 7 enters the space in the insulating cover 10, the space P is small and the electron moving distance is short, so that plasma P is not normally generated in the space.
  • the material of the insulating cover 10 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon or the like.
  • the insulating cover 10 By providing the insulating cover 10, it is possible to prevent charged particles in the plasma P from entering the metal pipe 31 constituting the antenna 3, so that charged particles (mainly electrons) enter the metal pipe 31. An increase in plasma potential can be suppressed, and metal contamination (metal contamination) on the plasma P and the substrate W caused by sputtering of the metal pipe 31 by charged particles (mainly ions) can be suppressed. .
  • a high-frequency power source 4 is connected to a feeding end 3a that is one end of the antenna 3 via a matching circuit 41, and a termination 3b that is the other end is directly grounded.
  • the terminal end 3b may be grounded via a capacitor or a coil.
  • the high-frequency current IR can flow from the high-frequency power source 4 to the antenna 3 through the matching circuit 41.
  • the high frequency is, for example, a general 13.56 MHz, but is not limited thereto.
  • the antenna 3 has a hollow structure having a flow path through which the coolant CL flows. Specifically, as shown in FIG. 2, the antenna 3 is provided between at least two tubular metal conductor elements 31 (hereinafter referred to as “metal pipes 31”) and metal pipes 31 adjacent to each other. In addition, a tubular insulating element 32 (hereinafter referred to as “insulating pipe 32”) that insulates the metal pipes 31 and a capacitor 33 that is a capacitive element electrically connected in series with the adjacent metal pipes 31 are provided. ing.
  • the number of metal pipes 31 is two, and the number of insulating pipes 32 and capacitors 33 is one each.
  • one metal pipe 31 is also referred to as “first metal pipe 31A”, and the other metal pipe is also referred to as “second metal pipe 31B”.
  • the antenna 3 may have a configuration including three or more metal pipes 31. In this case, the number of the insulating pipes 32 and the capacitors 33 is one less than the number of the metal pipes 31. Become.
  • the coolant CL circulates through the antenna 3 through a circulation channel 14 provided outside the vacuum vessel 2, and the circulation channel 14 has heat for adjusting the coolant CL to a constant temperature.
  • a temperature control mechanism 141 such as an exchanger and a circulation mechanism 142 such as a pump for circulating the coolant CL in the circulation flow path 14 are provided.
  • the cooling liquid CL high resistance water is preferable from the viewpoint of electrical insulation, for example, pure water or water close thereto is preferable.
  • a liquid refrigerant other than water such as a fluorine-based inert liquid, may be used.
  • the metal pipe 31 has a straight tube shape in which a linear flow path 31x in which the cooling liquid CL flows is formed. And the external thread part 31a is formed in the outer peripheral part of the longitudinal direction at least one end part of the metal pipe 31. As shown in FIG. Although the metal pipe 31 of this embodiment forms the edge part in which the external thread part 31a was formed, and other members by separate parts, they may be joined, but you may form from a single member. In order to make the parts common with the configuration in which the plurality of metal pipes 31 are connected, it is desirable that the male pipe portions 31a be formed at both ends in the longitudinal direction of the metal pipe 31 so as to be compatible.
  • the material of the metal pipe 31 is, for example, copper, aluminum, alloys thereof, stainless steel, or the like.
  • the insulating pipe 32 has a straight tube shape in which a linear flow path 32x in which the cooling liquid CL flows is formed. Then, on the side peripheral walls at both ends in the axial direction of the insulating pipe 32, female screw portions 32 a that are screwed and connected to the male screw portion 31 a of the metal pipe 31 are formed. Moreover, the recessed part 32b for fitting each electrode 33A, 33B of the capacitor
  • PE polyethylene
  • PPS polyphenine
  • the capacitor 33 is provided inside the insulating pipe 32. Specifically, the capacitor 33 is provided in the flow path 32x through which the coolant CL of the insulating pipe 32 flows.
  • the capacitor 33 includes a first electrode 33A electrically connected to one of the adjacent metal pipes 31 (first metal pipe 31A) and the other of the adjacent metal pipes 31 (second metal).
  • each of the electrodes 33A and 33B has a substantially rotating body shape, and a main flow path 33x is formed at the center along the central axis.
  • each of the electrodes 33A and 33B includes a flange portion 331 that electrically contacts an end portion of the metal pipe 31 on the insulating pipe 32 side, and an extending portion 332 that extends from the flange portion 331 to the insulating pipe 32 side. have.
  • the flange portion 331 and the extension portion 332 may be formed from a single member, or may be formed by separate parts and joined together.
  • the material of the electrodes 33A and 33B is, for example, aluminum, copper, or an alloy thereof.
  • the flange portion 331 is in contact with the end portion of the metal pipe 31 on the insulating pipe 32 side over the entire circumferential direction. Specifically, the axial end surface of the flange portion 331 contacts the tip end surface of a cylindrical contact portion 311 formed at the end portion of the metal pipe 31 over the entire circumferential direction, and the contact portion of the metal pipe 31. Electrical contact is made with the end surface of the metal pipe 31 via a ring-shaped multi-face contact 15 provided on the outer periphery of 311. The flange portion 331 may be in electrical contact with the metal pipe 31 by any one of them.
  • a plurality of through holes 331h are formed in the flange portion 331 in the thickness direction.
  • the extending portion 332 has a cylindrical shape, and a main flow path 33x is formed therein.
  • the extension part 332 of the first electrode 33A and the extension part 332 of the second electrode 33B are arranged coaxially with each other. That is, the extension part 332 of the second electrode 33B is provided in a state of being inserted into the extension part 332 of the first electrode 33A. Thereby, a cylindrical space along the flow path direction is formed between the extending portion 332 of the first electrode 33A and the extending portion 332 of the second electrode 33B.
  • the electrodes 33A and 33B configured in this way are fitted in a recess 32b formed on the side peripheral wall of the insulating pipe 32.
  • the first electrode 33A is fitted in the recess 32b formed on one end side in the axial direction of the insulating pipe 32
  • the second electrode is inserted in the recess 32b formed on the other end side in the axial direction of the insulating pipe 32.
  • 33B is fitted.
  • each electrode 33A, 33B when the end face of the flange portion 331 of each electrode 33A, 33B is in contact with the surface facing the axially outer side of each recess 32b, the extension portion of the second electrode 33B with respect to the extension portion 332 of the first electrode 33A An insertion dimension of 332 is defined.
  • the electrodes 33A and 33B are fitted into the recesses 32b of the insulating pipe 32, and the male threaded portion 31a of the metal pipe 31 is screwed into the female threaded portion 32a of the insulating pipe 32, whereby the contact portion of the metal pipe 31 is contacted.
  • the tip surface of 311 comes into contact with the flange portion 331 of the electrodes 33A and 33B, and the electrodes 33A and 33B are sandwiched and fixed between the insulating pipe 32 and the metal pipe 31.
  • the antenna 3 according to this embodiment has a structure in which the metal pipe 31, the insulating pipe 32, the first electrode 33A, and the second electrode 33B are coaxially arranged.
  • connection part of the metal pipe 31 and the insulation pipe 32 has a seal structure with respect to the vacuum and the coolant CL.
  • the seal structure of the present embodiment is realized by a seal member 16 such as packing provided at the proximal end portion of the male screw portion 31a.
  • the coolant CL flows from the first metal pipe 31A
  • the coolant CL flows to the second electrode 33B side through the main channel 33x and the through hole 331h of the first electrode 33A.
  • the coolant CL that has flowed to the second electrode 33B side flows to the second metal pipe 31B through the main flow path 33x and the through hole 331h of the second electrode 33B.
  • the cylindrical space between the extending portion 332 of the first electrode 33A and the extending portion 332 of the second electrode 33B is filled with the cooling liquid CL, and the cooling liquid CL becomes a dielectric and becomes a capacitor. 33 is configured.
  • the electrodes 33A and 33B constituting the capacitor 33 and the dielectric It is possible to eliminate gaps between the bodies. As a result, arc discharge that can occur in the gap between the electrodes 33A and 33B and the dielectric can be eliminated, and damage to the capacitor 33 due to arc discharge can be eliminated. Further, the distance between the extending portion 332 of the first electrode 33A and the extending portion 332 of the second electrode 33B, the facing area, and the relative dielectric of the liquid dielectric (cooling liquid CL) without considering the gap. The capacitance value can be accurately set from the rate.
  • the structure for pressing the electrodes 33A and 33B and the dielectric for filling the gaps can be eliminated, and the structure around the antenna due to the pressing structure and the deterioration of the uniformity of the plasma P caused thereby can be prevented. be able to.
  • the cooling liquid CL is normally adjusted to a constant temperature by the temperature adjustment mechanism 141.
  • the change in the dielectric constant due to the temperature change is suppressed, and the change in the capacitance value is suppressed. Can be suppressed.
  • the relative dielectric constant of water is about 80 (20 ° C.), which is larger than the dielectric sheet made of resin, so that the capacitor 33 that can withstand high voltage is formed. Can do.
  • the capacitor 33 can obtain a sufficient capacitance value even if the capacitor 33 has a two-cylinder structure including two extending portions 332. Therefore, each electrode 33A, 33B can be manufactured while the perpendicularity of the extending part 332 with respect to the flange part 331 of each electrode 33A, 33B is improved, and the capacitance value can be set with high accuracy.
  • impurities may be mixed in by electrolysis of water, but it can be removed by providing a filter such as an ion exchange membrane filter on the circulation channel 14, and the capacitance value of the capacitor 33 changes. Can be suppressed.
  • the capacitor 33 has a two-cylinder structure including two cylindrical extending portions.
  • three or more cylindrical extending portions 332 are coaxially arranged. It may be arranged.
  • the extending part 332 of the first electrode 33A and the extending part 332 of the second electrode 33B are arranged alternately.
  • the inner and outer two are the extending portions 332 of the first electrode 33A, and the middle one is the extending portion 332 of the second electrode 33B.
  • a part of the tip corner portion 332a of the extension portion 332 is cut into a taper shape so as to alleviate electric field concentration at the tip corner portion of the extension portion 332 serving as the counter electrode of the capacitor 33. May be missing.
  • the inner peripheral surface of the tip corner portion 332a of the extension portion 332 of the first electrode 33A is cut out in a tapered shape
  • the outer peripheral surface of the tip corner portion 332a of the extension portion 332 of the second electrode 33B Cut out into a tapered shape.
  • the contact between the electrodes 33A and 33B and the metal pipe 31 is not limited to the contact between the end faces, but the contact terminals 333 are provided on the electrodes 33A and 33B as shown in FIG. You may comprise so that it may contact.
  • a contact terminal 333 protruding outward in the axial direction from the flange portion 331 of the electrodes 33 ⁇ / b> A and 33 ⁇ / b> B is provided, and the contact terminal 333 is in press contact with the outer peripheral surface of the contact portion 311 of the metal pipe 31. is there.
  • the relative positions of the electrodes 33A and 33B are defined by the surface of the insulating pipe 32 facing the outside in the axial direction of the recess 32b.
  • the capacitor is housed in the insulating pipe.
  • the capacitor may be provided outside the insulating pipe.
  • the first electrode and the second electrode constituting the capacitor are provided on the outer periphery of the insulating pipe, and a liquid dielectric is filled between the electrodes.
  • the first electrode and the second electrode may be electrically connected to the metal pipe while the electrodes are separated from the insulating pipe.
  • the liquid dielectric may be a coolant supplied by a branch flow path branched from the internal flow path of the antenna, or may be a liquid dielectric supplied by a separate path from the coolant. There may be.
  • a liquid dielectric may be sealed between the first electrode and the second electrode. In the case of sealing, it is necessary to provide a temperature adjustment mechanism for adjusting the temperature of the dielectric material of the liquid to be constant.
  • the plasma processing apparatus 100 of the second embodiment differs from the first embodiment in the configuration of the antenna 3, particularly the configuration of the capacitor 33.
  • the antenna 3 has a hollow structure having a flow path through which the coolant CL flows. Specifically, as shown in FIG. 6, the antenna 3 is provided between at least two tubular metal conductor elements 31 (hereinafter referred to as “metal pipes 31”) and metal pipes 31 adjacent to each other. In addition, a tubular insulating element 32 (hereinafter referred to as “insulating pipe 32”) that insulates the metal pipes 31 and a capacitor 33 that is a capacitive element electrically connected in series with the adjacent metal pipes 31 are provided. ing.
  • the number of metal pipes 31 is two, and the number of insulating pipes 32 and capacitors 33 is one each.
  • one metal pipe 31 is also referred to as “first metal pipe 31A”, and the other metal pipe 31 is also referred to as “second metal pipe 31B”.
  • the first metal pipe 31A is the metal pipe 31 disposed on the upstream side in the flow direction of the coolant CL
  • the second metal pipe 31B is the metal disposed on the downstream side in the flow direction of the coolant CL.
  • the first metal pipe 31A and the second metal pipe 31B have the same outer diameter and inner diameter, and are arranged coaxially.
  • the outer diameter and inner diameter of the metal pipe 31 may be appropriately changed, and the arrangement is not necessarily coaxial.
  • the antenna 3 may have a configuration including three or more metal pipes 31, and in this case, the number of the insulation pipes 32 and the capacitors 33 is one less than the number of the metal pipes 31.
  • the metal pipe 31 has a straight tube shape in which a linear flow path 31x in which the cooling liquid CL flows is formed.
  • the material of the metal pipe 31 is, for example, copper, aluminum, alloys thereof, stainless steel, or the like.
  • the insulating pipe 32 has a straight tube shape in which a linear flow path 32x in which the cooling liquid CL flows is formed.
  • the insulating pipe 32 of the present embodiment has the same outer diameter as the metal pipe 31 and is arranged coaxially with the metal pipe 31.
  • the insulating pipe 32 is formed of a single member.
  • the material of the insulating pipe 32 is, for example, alumina, fluorine resin, polyethylene (PE), engineering plastic (for example, polyphenine sulfide (PPS), polyether ether ketone (PEEK). ) Etc.).
  • the dimensions, arrangement, and members of the insulating pipe 32 are not limited to the above.
  • the capacitor 33 is interposed between the first metal pipe 31A and the second metal pipe 32B, and the flow path 31x of the first metal pipe 31A and the flow path 31x of the second metal pipe 31B are disposed therein.
  • the main flow path 33x which connects is formed.
  • the capacitor 33 is electrically connected to the first metal pipe 31A, the first electrode 33A disposed on the first metal pipe 31A side from the insulating pipe 32, and the second metal pipe 31B.
  • a second electrode that is electrically connected extends from the second metal pipe 31B side through the inside of the insulating pipe 32 to the first metal pipe 31A side, and is disposed to face the first electrode 33A. 33B, and the cooling liquid CL fills the space S between the first electrode 33A and the second electrode 33B. That is, the coolant CL flowing through the space S between the first electrode 33A and the second electrode 33B becomes a dielectric that constitutes the capacitor 33.
  • the first electrode 33 ⁇ / b> A and the first metal pipe 31 ⁇ / b> A are formed by screwing a male screw portion formed at one axial end portion and a female screw portion formed at the other axial end portion. Are connected to each other.
  • the male screw portion 31a is formed on the inner peripheral portion at the axial end portion of the first metal pipe 31A
  • the female screw portion 33a is formed on the outer peripheral portion at the axial end portion of the first electrode 33A.
  • the second electrode 33B and the second metal pipe 31B are formed by screwing a male screw portion formed at one axial end portion and a female screw portion formed at the other axial end portion. It is comprised so that it may mutually connect.
  • the external thread portion 31a is formed at the outer peripheral portion at the axial end portion of the second metal pipe 31B
  • the internal thread portion 33a is formed at the inner peripheral portion at the axial end portion of the second electrode 33B.
  • Each of the electrodes 33A and 33B has a substantially rotating body shape, and a main flow path 33x is formed at the center along the central axis.
  • Each of the electrodes 33A and 33B here has a tubular shape and is provided without protruding outward from the metal pipe 31 when viewed from the axial direction.
  • the materials of the electrodes 33A and 33B are, for example, aluminum, copper, and alloys thereof.
  • each of the electrodes 33A and 33B is screwed into the metal pipe 31 to come into contact with and electrically connect to the end of the metal pipe 31 on the insulating pipe 32 side, and from the contact portion 331 And an extending portion 332 extending to the insulating pipe 32 side.
  • the contact part 331 and the extension part 332 may be formed from a single member, or may be formed by separate members and joined to each other.
  • the contact portion 331 is in contact with the end portion of the metal pipe 31 on the insulating pipe 32 side over the entire circumferential direction.
  • the contact portion 331 has a cylindrical shape, and its axial end surface is in contact with the tip end surface of the cylindrical contacted portion 311 formed at the end portion of the metal pipe 31 over the entire circumferential direction.
  • the outer diameter of the contact portion 331 is equal to or smaller than the outer diameter of the metal pipe 31 and is the same as the outer diameter of the metal pipe 31 here.
  • the contact portion 331 is in electrical contact with the end surface of the metal pipe 31 through the ring-shaped multi-face contact 15 provided between the contact portion 311.
  • a seal structure for vacuum and the coolant CL is interposed between the contact portion 331 and the contacted portion 311.
  • the seal structure of the present embodiment is realized by a seal member 16 such as an O-ring provided between the contact portion 331 and the contacted portion 311.
  • the extending portion 332 has a cylindrical shape, and a main flow path 33x is formed therein.
  • the extension part 332 of the first electrode 33A (hereinafter referred to as “first extension part 332A”) and the extension part 332 of the second electrode 33B (hereinafter referred to as “second extension part 332B”) As shown in FIG. 6, a double cylinder structure is formed in which the first extending portion 332A is disposed on the outside and the second extending portion 332B is disposed on the inside. .
  • the first extending portion 332A is provided between the contact portion 331 of the first electrode 33A and the insulating pipe 32, and its proximal end is joined to the contact portion 331, and the distal end The part is fixed to the insulating pipe 32. More specifically, the axial end portion of the contact portion 331 on the insulating pipe 32 side is formed with a notch portion 331a in which the outer peripheral portion is notched in the circumferential direction, and the outer diameter is smaller than other portions. The base end portion of the first extending portion 332A is configured to fit into the cutout portion 331a.
  • the axial end of the insulating pipe 32 on the first metal pipe 31A side is formed with an outer peripheral cutout portion 32a in which the outer peripheral portion is cut out in the circumferential direction, and the outer diameter is smaller than other portions.
  • the distal end portion of the first extending portion 332A is configured to fit into the outer circumferential cutout portion 32a. That is, the inner diameter of the first extending portion 332A is the same as or slightly larger than the outer diameter of the axial end portion of the contact portion 331 on the insulating pipe 32 side, and the shaft of the insulating pipe 32 on the first metal pipe 31A side. Same or slightly larger than the outer diameter of the direction end.
  • the outer diameter of the first extending portion 332A is designed to be equal to or smaller than the outer diameter of the metal pipe 31, and is the same as the outer diameter of the metal pipe 31 here.
  • the base end portion of the first extension portion 332A and the contact portion 331 are joined by, for example, welding M, and the tip portion of the first extension portion 332A and the insulating pipe 32 are fixed by, for example, brazing B or the like.
  • the joining method and the fixing method are not limited to this.
  • the second extension portion 332B extends from the second metal pipe 31B side to the first metal pipe 31A side through the inside of the insulating pipe 32, and doubles together with the first extension portion 332A.
  • a straight pipe element 334 extending from the tip of the reduced diameter element 333 to the first metal pipe 31A side through the inside of the insulating pipe 32.
  • the reduced diameter element 333 and the straight pipe element 334 may be formed of a single member, or may be formed of separate parts and joined by welding or the like.
  • the diameter-reducing element 333 is configured such that at least the outer diameter decreases stepwise or gradually decreases from the proximal end portion toward the distal end portion, and here, the outer diameter and the inner diameter decrease in a stepwise manner.
  • the diameter reducing element 333 has a proximal end joined to the contact portion 331 and a distal end fixed to the insulating pipe 32. More specifically, as described above, the axial end portion of the contact portion 331 on the insulating pipe 32 side is formed with a notch portion 331a in which the outer peripheral portion is notched in the circumferential direction, and has an outer diameter larger than that of the other portions.
  • the base portion of the reduced diameter element 333 is fitted to the notch 331a.
  • the axial end of the insulating pipe 32 on the second metal pipe 31B side is formed with an inner peripheral cutout portion 32b in which the inner peripheral portion is cut out in the circumferential direction, and the inner diameter is smaller than other portions.
  • the distal end portion of the diameter-reducing element 333 is configured to fit into the inner peripheral cutout portion 32b. That is, the inner diameter of the proximal end portion of the reduced diameter element 333 is the same as or slightly larger than the outer diameter of the axial end portion of the contact portion 331 on the insulating pipe 32 side, and the outer diameter of the distal end portion of the reduced diameter element 333 is the insulating pipe. 32 is the same as or slightly smaller than the inner diameter of the axial end on the first metal pipe side.
  • the outer diameter of the proximal end portion of the reduced diameter element 333 is designed to be equal to or smaller than the outer diameter of the metal pipe 31, and is the same as the outer diameter of the metal pipe 31 here.
  • the proximal end portion and the contact portion 331 of the reduced diameter element 333 are joined by, for example, welding M, and the distal end portion of the reduced diameter element 333 and the insulating pipe 32 are fixed by, for example, brazing B.
  • the method and the fixing method are not limited to this.
  • the straight pipe element 334 is provided in a state of extending from the distal end portion of the diameter-reducing element 333 to the first metal pipe 31A side and passing through the inside of the insulating pipe 32 and inserted into the first extension portion 332A. Yes. Thereby, a cylindrical space S along the flow path direction is formed between the straight pipe element 334 and the first extending portion 332A.
  • the straight pipe element 334 has an outer diameter smaller than the inner diameter of the insulating pipe 32 and the inner diameter of the first extension portion 332A, and is arranged coaxially with the first extension portion 332A. Thereby, the distance between the inner peripheral surface of the first extending portion 332A and the outer peripheral surface of the straight pipe element 334 is constant along the circumferential direction.
  • tube element 334 is made into the same dimension as the internal diameter of the front-end
  • the straight pipe element 334 is formed with a plurality of through holes 332h penetrating the peripheral wall in the thickness direction. Specifically, these through holes 332 h are formed along the flow direction of the cooling liquid CL so as to face at least a part of the inner peripheral surface of the insulating pipe 32, and between the straight pipe element 334 and the insulating pipe 32. The space communicates with the main flow path 33x of the second electrode 33B. These through holes 332h are provided at equal intervals in the circumferential direction, and are provided between the proximal end of the straight pipe element 334 and the distal end of the first extending portion 332A along the axial direction.
  • the front end surface of the contacted portion 311 of the metal pipe 31 is formed by screwing the male screw portion 31a of the metal pipe 31 with the female screw portion 33a of each of the electrodes 33A and 33B. Is in contact with the contact portion 331 of the electrodes 33A and 33B, and the space between the electrodes 33A and 33B is sealed by the seal member 16, and the electrodes 33A and 33B are arranged coaxially with each other, and the first electrode 33A extends.
  • the insertion dimension of the extended portion 332B of the second electrode 33B with respect to the extended portion 332A is defined.
  • the seal between the metal pipe 31 and the insulating pipe 32, the electrical contact between the metal pipe 31 and each electrode 33A, 33B, and the arrangement of each electrode 33A, 33B are the same as those of the male screw portion 31a and the female screw portion 33a. Since it is performed together with the fastening, the assembling work becomes very simple.
  • the capacitor 33 is configured. ⁇ Effects of Second Embodiment> According to the plasma processing apparatus 100 of the second embodiment configured as described above, the capacitor 33 is electrically connected in series to the metal pipes 31 adjacent to each other via the insulating pipe 32, so that the combined reactance of the antenna 3 is In short, since the capacitive reactance is subtracted from the inductive reactance, the impedance of the antenna 3 can be reduced. As a result, even when the antenna 3 is lengthened, an increase in impedance can be suppressed, high-frequency current can easily flow through the antenna 3, and inductively coupled plasma P can be generated efficiently.
  • the electrodes 33A, 33B constituting the capacitor 33 and A gap generated between the dielectrics can be eliminated.
  • arc discharge that can occur in the gap between the electrodes 33A and 33B and the dielectric can be eliminated, and damage to the capacitor 33 due to arc discharge can be eliminated.
  • the distance between the extending portion 332A of the first electrode 33A and the extending portion 332B of the second electrode 33B, the facing area, and the relative dielectric of the liquid dielectric (cooling liquid CL) can be considered without considering the gap.
  • the capacitance value can be accurately set from the rate.
  • the structure for pressing the electrodes 33A and 33B and the dielectric for filling the gaps can be eliminated, and the structure around the antenna due to the pressing structure and the deterioration of the uniformity of the plasma P caused thereby can be prevented. be able to.
  • the second electrode 33B extends from the second metal pipe 31B side to the first metal pipe 31A side through the inside of the insulating pipe 32, the second electrode 33B is opposed to the first electrode 33A. A capacitance value necessary for the capacitor 33 can be easily obtained by changing the dimensions.
  • the cooling liquid CL is normally adjusted to a constant temperature by the temperature adjustment mechanism 141.
  • the change in the dielectric constant due to the temperature change is suppressed, and the change in the capacitance value is suppressed. Can be suppressed.
  • the relative dielectric constant of water is about 80 (20 ° C.), which is larger than the dielectric sheet made of resin, so that the capacitor 33 that can withstand high voltage is formed. Can do.
  • the capacitor 33 can obtain a sufficient capacitance value even if the capacitor 33 has a double cylinder structure including the two extending portions 332A and 332B. Furthermore, the capacitance value can be set with high accuracy by manufacturing each of the electrodes 33A and 33B while improving the verticality of the extending portion 332 with respect to the contact portion 331 of each of the electrodes 33A and 33B. In addition, there is a possibility that impurities may be mixed in by electrolysis of water, but it can be removed by providing a filter such as an ion exchange membrane filter on the circulation channel 14, and the capacitance value of the capacitor 33 changes. Can be suppressed.
  • the distance between the inner peripheral surface of the first extending portion 332A and the outer peripheral surface of the second extending portion 332B (more specifically, the outer peripheral surface of the straight pipe element 334) is constant along the circumferential direction. Therefore, the distribution of the high-frequency current flowing through the metal pipe 31 can be made uniform in the circumferential direction, and plasma with good uniformity can be generated.
  • the second electrode 33B has a tubular shape, and the main flow path 33x is formed from the first metal pipe 31A side to the second metal pipe 31B side.
  • the second electrode 33B may be one in which the main flow path 33x is formed on the second metal pipe 31B side and the first metal pipe 31A side is solid.
  • the second electrode 33B communicates with the through hole 332h and extends along the flow direction of the coolant CL.
  • a groove 332g is preferably formed.
  • the groove 332 g is a bottomed groove provided in each through hole 332 h and extending in the axial direction, and is formed so that the opening faces the inner peripheral surface of the insulating pipe 32.
  • the tip end corner portion 332c of the second extending portion 332B is tapered (conical) so as to alleviate the electric field concentration at the tip end corner portion 332c of the second electrode 33B. good.
  • the flow path resistance of the coolant CL is increased compared to the case where the second electrode 33B is tubular.
  • the second electrode 33B thinner.
  • the distance between the inner peripheral surface of the first electrode 33A and the outer peripheral surface of the second electrode 33B becomes longer.
  • the capacitance value of the capacitor 33 becomes small, and there is a possibility that the capacitor 33 cannot withstand a high voltage. Therefore, in order to secure the capacitance value necessary for the capacitor 33 while reducing the flow path resistance of the coolant CL by the second electrode 33B, the first electrode 33A has the second electrode as shown in FIG.
  • a throttle portion 335 formed at a position facing the electrode 33B and having a smaller inner diameter.
  • the throttle portion 335 is formed in the first electrode 33A. The distance between the outer peripheral surface of the first electrode 33A and the inner peripheral surface of the second electrode 33B can be shortened, and the capacitance value necessary for the capacitor 33 can be ensured.
  • the communication hole 332h is provided along the axial direction from the proximal end of the straight pipe element 334 to the distal end of the first extending portion 332A, but as shown in FIG. Further, the through hole 332h may be provided beyond the tip of the first extending portion 332A along the axial direction, and although not shown, the through hole 332h does not extend to the base end of the straight pipe element 334. You may stay in front.
  • the first electrode 33A is a separate member from the metal pipe 31
  • the first electrode 33A is formed from a part of the metal pipe 31 as shown in FIG. It may be.
  • the end of the first metal pipe 31A in the axial direction extends to the insulating pipe 32 side, and the second electrode 33B passes through the inside of the insulating pipe 32 from the second metal pipe 31B side.
  • the structure extended to the inside of this metal pipe 31A is mentioned.
  • the axial end of the first metal pipe 32 is fixed to the insulating pipe 32.
  • the first metal pipe 31A side of the insulating pipe 32 is the same as in the above embodiment.
  • An outer peripheral notch 32a having an outer peripheral portion cut out in the circumferential direction is formed at the axial end, and the axial end of the first metal pipe 31A is fitted into the outer peripheral notch 32a, for example, brazing B.
  • the method of fixing by etc. is mentioned. With such a configuration, the portion of the first metal pipe 31A facing the second electrode can be made to function as the first electrode 33A, and the same effect as the above embodiment while reducing the number of parts. Can be obtained.
  • the metal pipe 31 disposed on the upstream side in the flow direction of the cooling liquid CL is defined as the first metal pipe 31A, and the metal pipe 31 disposed on the downstream side in the flow direction of the cooling liquid CL is used.
  • the second metal pipe 31B is arranged.
  • the metal pipe 31 disposed on the downstream side in the flow direction of the coolant CL is defined as the first metal pipe 31A, and is disposed on the upstream side in the flow direction of the coolant CL.
  • the formed metal pipe 31 may be used as the second metal pipe 31B.
  • the flow direction of the coolant CL may be opposite to that of the above embodiment.
  • FIG. 11 shows a convex portion 3 ⁇ / b> T that protrudes toward the insulating cover 10 on the outer peripheral surface of the metal pipe 32 or the electrode positioned on at least one side of both sides in the axial direction of the insulating pipe 32 in the antenna 3. May be.
  • FIG. 12 shows a state in which the antenna 3 is bent, and a state in which the lower portion of the convex portion 3T is in contact with the inner surface of the insulating cover 10.
  • first electrode 33A electrically connected to the first metal pipe 31A on one side of the insulating pipe 32, and a second metal pipe 31B on the other side of the insulating pipe 32.
  • a second electrode 33B disposed so as to face the first electrode 33A, and the space between the first electrode 33A and the second electrode 33B is used as a coolant. It is comprised so that CL may satisfy
  • Each of the electrodes 33A and 33B has a substantially rotating body shape, and a flow path 33x is formed at the center along the central axis.
  • each of the electrodes 33A and 33B includes a flange portion 331 that electrically contacts the end portion of the metal pipe 31 on the insulating pipe 32 side, and a cylindrical extension that extends from the flange portion 331 to the insulating pipe 32 side. And an exit 332.
  • the flange portion 331 is sandwiched between the metal pipe 31 and the insulating pipe 32.
  • a through hole 331h through which cooling water flows is also formed in the flange portion.
  • the convex portions 3T provided on the antenna 3 are desirably provided adjacent to both sides of the insulating pipe 32 in the axial direction.
  • the convex portions 3T are provided continuously or intermittently over the entire circumferential direction of members (metal pipes 31A and 31B in FIG. 11) located on both sides of the insulating pipe 32 in the axial direction. If the bending due to the weight of the antenna 3 is taken into consideration, it may be formed only on the lower part of the metal pipes 31A and 31B.
  • the protruding dimension of the convex portion from the outer peripheral surface of the metal pipe is such that the insulating pipe 32 does not contact the insulating cover 10 due to the bending of the antenna 3.
  • the cross-sectional shape of the convex portion 3T may be a rectangular shape, at least the tip portion may be an arc shape, or at least the tip portion may be a triangle shape. Good.
  • protrusions 3T are desirably provided adjacent to both sides in the axial direction of each insulating pipe 32 when the antenna 3 is provided with a plurality of insulating pipes 32. Moreover, the structure provided adjacent to the axial direction one side of each insulation pipe 32 may be sufficient. With this configuration, when the amount of bending of the antenna 3 increases, the plurality of axially arranged convex portions 3T come into contact with the insulating cover 10, and the load applied to the insulating cover 10 is dispersed. Can do.
  • the position where the protrusion 3T is provided on the insulating pipe 32 is not limited to the position adjacent to the insulating cover 32, and may be a position where the insulating pipe 32 does not contact the insulating cover 10 due to bending of the antenna 3.
  • the concave portion 3M is formed on the outer peripheral surface of the metal pipes 31A and 31B. You may comprise by fitting the ring-shaped member 3R used as the convex part 3T.
  • the insulating pipe 32 can be prevented from contacting the insulating cover 10 by the convex portion 3T contacting the insulating cover 10. . Thereby, the thermal damage of insulating pipes 32 made of resin can be prevented. Further, by preventing the insulating pipe 32 and the insulating cover 10 from coming into contact with each other, it is possible to prevent the temperature of the coolant serving as the dielectric of the capacitor 33 from increasing due to the insulating pipe 32 coming into contact with the insulating cover 10. As a result, a change in the dielectric constant of the coolant can be suppressed.
  • the protrusion 3T can also be provided in the antenna 3 exemplified in the embodiment.
  • members for example, the first metal pipe 31A, the first electrode 33A, the second metal pipe 31B, and the second electrode 33B located on at least one side of both sides in the axial direction of the insulating pipe 32 of the embodiment.
  • the contact portion 331 or the reduced diameter element 333 is provided with a convex portion 3T.
  • the first electrode 33A and the second electrode 33B have a corrosion-resistant layer 33L on at least the surfaces of the electrodes facing each other.
  • FIG. 14 shows an example in which a corrosion-resistant layer 33L is formed on the surfaces facing each other in the first electrode 33A and the second electrode 33B
  • FIG. 15 shows the first electrode 33A and the second electrode 33B. Shows an example in which a corrosion-resistant layer 33L is formed on the entire surface of the electrode.
  • a corrosion-resistant layer may be formed on the surface in contact with the coolant in each of the electrodes 33A and 33B.
  • a corrosion-resistant layer 33L is also formed on the contact surface of each electrode 33A, 33B with the metal pipe 31.
  • the corrosion-resistant layer 33L is, for example, a plating film such as nickel plating, or a surface oxide film of the first electrode 33A and the second electrode 33B.
  • nickel plating electroless nickel plating that does not affect the metal grain boundaries, has no pinholes, and can be uniformly plated on the fine and thin tube internal structure is desirable.
  • an oxide film may be formed on the aluminum alloy, and the oxide film may be used as the corrosion-resistant layer 33L.
  • the corrosion-resistant layer 33L By forming the corrosion-resistant layer 33L in this manner, it is possible to prevent the capacitance value from changing with time by suppressing oxidation of each electrode. As a result, a change in impedance of the antenna 3 can be suppressed and the plasma state can be maintained, and as a result, the quality and uniformity of the film formed can be maintained. Further, since the corrosion-resistant layer 33L is also formed on the contact surfaces of the electrodes 33A and 33B with the metal pipe 31, it is possible to suppress a change in resistance due to oxidation of the contact surfaces and suppress a change in impedance of the antenna 3. .
  • both end portions of each antenna 3 are extended out of the vacuum vessel 2, and the antennas 3 adjacent to each other have one antenna 3.
  • the end and the end of the other antenna 3 may be electrically connected by the connection conductor 17.
  • the end portions of the two antennas connected by the connection conductor 17 are end portions located on the same side wall side. Accordingly, the plurality of antennas 3 are configured such that high-frequency currents in opposite directions flow through the antennas 4 adjacent to each other.
  • connection conductor 17 has a flow path inside, and is configured so that the coolant flows through the flow path. Specifically, one end of the connection conductor 17 communicates with the flow path of one antenna 3, and the other end of the connection conductor 17 communicates with the flow path of the other antenna 3. Thereby, in the antennas 3 adjacent to each other, the coolant flowing through one antenna 3 flows to the other antenna 3 through the flow path of the connection conductor 17. Thereby, both the antenna 3 and the connection conductor 17 can be cooled by the common coolant. In addition, since the plurality of antennas 3 can be cooled by one flow path, the configuration of the circulation flow path 14 can be simplified.
  • connection conductor 17 includes one conductor portion 17a connected to one antenna 3 in the antennas 3 adjacent to each other, the other conductor portion 17c connected to the other antenna 3, the one conductor portion 17a and the other conductor portion 17a.
  • a capacitor 17c which is a capacitive element electrically connected in series to the conductor portion 17b.
  • the configuration of the conductor portions 17a and 17b may be the same as that of the conductor element 31 of the embodiment, for example, and the configuration of the capacitor 17c may be the same as that of the capacitor 33 of the embodiment, for example.
  • connection conductor 17 is not limited to that shown in FIG. 16.
  • the connection conductor 17 may have a configuration without a capacitive element as shown in FIG. 17.
  • an inductance obtained by combining the feeding-side end 3a of one antenna 3, the ground-side end 3b of the other antenna 3, and the connection conductor 17 is set as another conductor element 31.
  • the same inductive reactance and capacitive reactance are continuously repeated over the plurality of antennas 3 in the same manner as the above-described inductance.
  • uniform plasma P can be generated along the antenna 3 in the length direction and the arrangement direction.
  • the antenna 3 is disposed in the processing chamber of the substrate W.
  • the antenna 3 may be disposed outside the processing chamber 18 as shown in FIG. .
  • the plurality of antennas 3 are arranged in an antenna chamber 20 that is partitioned from the processing chamber 18 by a dielectric window 19 in the vacuum vessel 2.
  • the antenna chamber 20 is evacuated by the evacuation device 21.
  • the plurality of antennas 3 may be connected to each other by the connection conductor 17 as shown in FIG. 16 and FIG. 17 described above, or arranged individually without being connected by the connection conductor 17. It may be a thing.
  • conditions such as the pressure in the processing chamber 18 and conditions such as the pressure in the antenna chamber 20 can be individually controlled, and the generation of plasma P can be efficiently performed, and the substrate W Can be processed efficiently.
  • the antenna is linear, but it may be curved or bent.
  • the metal pipe may be curved or bent, or the insulating pipe may be curved or bent.
  • the conductor element and the insulating element have a tubular shape having one internal flow path, but may have two or more internal flow paths or have a branched internal flow path. good. Further, the conductive element and / or the insulating element may be solid.
  • the extending portion has a cylindrical shape, but may have another rectangular tube shape, or a flat plate shape, a curved plate shape, or a bent plate shape.
  • the present invention it is possible to reduce the impedance of the antenna by incorporating a capacitive element into the antenna, and to eliminate a gap generated between the electrode constituting the capacitive element and the dielectric.

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  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

L'objet de la présente invention est de réduire l'impédance d'une antenne et d'éliminer les espaces entre un corps diélectrique et des électrodes constituant un élément capacitif. L'invention concerne une antenne (3) pour générer un plasma à couplage inductif (P), dans laquelle : l'antenne (3) comprend au moins deux éléments conducteurs (31), un élément d'isolation (32) qui est disposé entre les éléments conducteurs (31) mutuellement adjacents et qui isole les éléments conducteurs (31), et un élément de capacité (33) directement et électriquement connecté aux éléments conducteurs (31) mutuellement adjacents ; et l'élément de capacité (33) est constitué d'une première électrode (33A) connectée électriquement à l'un des éléments conducteurs (21) mutuellement adjacents, d'une seconde électrode (33B) électriquement connectée à l'autre des éléments conducteurs (31) mutuellement adjacents, et d'un corps diélectrique liquide remplissant l'espace entre la première électrode (33A) et la seconde électrode (33B).
PCT/JP2018/004939 2017-02-16 2018-02-13 Antenne pour générer un plasma, et dispositif de traitement au plasma et structure d'antenne comportant une antenne pour générer un plasma Ceased WO2018151114A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US16/485,166 US10932353B2 (en) 2017-02-16 2018-02-13 Antenna for generating plasma, and plasma treatment device and antenna structure provided with antenna for generating plasma
CN201880011433.3A CN110291847A (zh) 2017-02-16 2018-02-13 等离子体产生用的天线、具有所述天线的等离子体处理装置以及天线构造
KR1020197023197A KR102235221B1 (ko) 2017-02-16 2018-02-13 플라즈마 발생용의 안테나, 그것을 구비하는 플라즈마 처리 장치 및 안테나 구조

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2017-026663 2017-02-16
JP2017026663 2017-02-16
JP2017-050566 2017-03-15
JP2017050566 2017-03-15
JP2017-204961 2017-10-24
JP2017204967A JP6931461B2 (ja) 2017-03-15 2017-10-24 プラズマ発生用のアンテナ、それを備えるプラズマ処理装置及びアンテナ構造
JP2017204961A JP6341329B1 (ja) 2017-02-16 2017-10-24 プラズマ発生用のアンテナ及びそれを備えるプラズマ処理装置
JP2017-204967 2017-10-24

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11251020B2 (en) * 2017-06-07 2022-02-15 Nissin Electric Co., Ltd. Sputtering apparatus

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JP2002510841A (ja) * 1998-03-31 2002-04-09 ラム リサーチ コーポレーション 並列アンテナ・トランスフォーマー・カップルド・プラズマ発生システム
US20050067934A1 (en) * 2003-09-26 2005-03-31 Ishikawajima-Harima Heavy Industries Co., Ltd. Discharge apparatus, plasma processing method and solar cell
WO2009142016A1 (fr) * 2008-05-22 2009-11-26 株式会社イー・エム・ディー Appareil de génération de plasma et appareil de traitement par plasma
US20110018443A1 (en) * 2009-07-21 2011-01-27 Chwung-Shan Kou Plasma generating apparatus
JP2013206652A (ja) * 2012-03-28 2013-10-07 Nissin Electric Co Ltd アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置
JP2016072168A (ja) * 2014-10-01 2016-05-09 日新電機株式会社 プラズマ発生用のアンテナおよびそれを備えるプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002510841A (ja) * 1998-03-31 2002-04-09 ラム リサーチ コーポレーション 並列アンテナ・トランスフォーマー・カップルド・プラズマ発生システム
US20050067934A1 (en) * 2003-09-26 2005-03-31 Ishikawajima-Harima Heavy Industries Co., Ltd. Discharge apparatus, plasma processing method and solar cell
WO2009142016A1 (fr) * 2008-05-22 2009-11-26 株式会社イー・エム・ディー Appareil de génération de plasma et appareil de traitement par plasma
US20110018443A1 (en) * 2009-07-21 2011-01-27 Chwung-Shan Kou Plasma generating apparatus
JP2013206652A (ja) * 2012-03-28 2013-10-07 Nissin Electric Co Ltd アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置
JP2016072168A (ja) * 2014-10-01 2016-05-09 日新電機株式会社 プラズマ発生用のアンテナおよびそれを備えるプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251020B2 (en) * 2017-06-07 2022-02-15 Nissin Electric Co., Ltd. Sputtering apparatus

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